• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.183-186
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• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.

• Applied Chemistry for Engineering
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• v.23 no.1
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• pp.1-7
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• 2012

In this article, I will introduce recent developments of environmental-friendly materials fabricated using atomic layer deposition (ALD). Advantages of ALD include fine control of the thin film thickness and formation of a homogeneous thin fim on complex-structured three-dimensional substrates. Such advantages of ALD can be exploited for fabricating environmental-friendly materials. Porous membranes such as anodic aluminum oxide (AAO) can be used as a substrate for $TiO_2$ coating with a thickness of about 10 nm, and the $TiO_2$-coated AAO can be used as filter of volatile organic compound such as toluene. The unique structural property of AAO in combination with a high adsorption capacity of amorphous $TiO_2$ can be exploited in this case. $TiO_2$ can be also deposited on nanodiamonds and Ni powder, which can be used as photocatalyst for degradation of toluene, and $CO_2$ reforming of methane catalyst, respectively. One can produce structures, in which the substrates are only partially covered by $TiO_2$ domains, and these structures turns out to be catalytically more active than bare substrates, or complete core-shell structures. We show that the ALD can be widely used not only in the semiconductor industry, but also environmental science.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1057-1062
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• 2001

We investigated the change of mechanical properties for TiNi shape memory alloy by heat treatment. 6061Al matrix composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum casting. TiNi alloy has the maximum tensile strength at 673K treated and there is no change of tensile strength and hardness at 448K treated. The composites, prepared by vacuum casting, showed good interface bonding by vacuum casting. It was about 3$\mu\textrm{m}$ of thickness of the diffusion layer. Tensile strength of the composite was in higher than that of 6061Al alloy as increased value of about 70MPa at room temperature and about 110MPa at 363K. We thought that the increase of the tensile strength at 363K was due to reverse transformation of the TiNi shape memory alloy.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.1017-1020
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• 2002

The pure Ti is taken annealing process for one hour at 90$0^{\circ}C$. The pure Ti is sufficient for ASTM B348 Grade2. The rolling mill roll the Ti-8Ta-3Nb(wt%) which became vacuum melting in arc furnace until the length is about 45mm and the thickness is about 6.05mm. Then it is made 6mm$\times$6mm$\times$44mm by wire cutting with EDM and it is made ∮ 6mm by rough cutting with the general purpose lathe. The machining accuracy of implant parts in the dental and medical science are decided by dimension, shpe, straightness, surface roughness. It is difficult to cut for the Ti alloy. It is caused problems of straight degree and surface roughness to the Ti alloy have many cases which length is smaller than diameter in cutting. Total 24 specimens different kind of 4 alloies are used in experiment to gain a cutting property. According to the cutting velocity, cutting depth, cutting temperature, feed and clearance angle experiments are performed. Conclusively it is expected that cutting depth of 0.5mm, feed velocity of 0.07mm/rev and cutting velocity of 80m/min could make a suitable result.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.711-716
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• 2003

Gate length, height, and silicide thickness have all been shrinking linearly as device density has progressively increased over the years. We investigated the effect of the cobalt diffusion during the silicide formation process on the 60$\AA$-thick gate oxide lying underneath the Ti/Co and Co/Ti bilayers. We prepared four different cobalt silicides, which have similar sheet resistance, made from the film structure of Co/Ti(interlayer), and Ti(capping layer)/Co, and peformed the current-voltage, time-to-break down, and capacitance-voltage measurements. Our result revealed that the cobalt silicide process without the Ti capping layer allowed cobalt atoms to diffuse into the upper interface of gate oxides. We propose that 100$\AA$-thick titanium interlayer may lessen the diffusion of cobalt to gate oxides in 1500-$\AA$ height polysilicon gates.

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.149-153
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• 2012

The $Cu_2O/TiO_2$ inverse opal heterojunction arrays were developed by electrochemical deposition of $Cu_2O$ nanoparticles on $TiO_2$ inverse opal arrays. The $Cu_2O$ nanoparticles completely filled the inner pores of $TiO_2$ inverse opal film (prepared by liquid phase deposition with an average thickness of 400 nm) and covered the entire area; exhibiting high crystalline properties of anatase and cubic phase from $TiO_2$ and $Cu_2O$, respectively. From asymmetric current-voltage profile, it was noticeable that a heterojunction was well formed for charge transport from $Cu_2O$ to $TiO_2$ film resulting from the enhanced charge separation yield. In addition, increased photocurrent of 0.19 $mA/cm^2$ (versus 0.08 $mA/cm^2$ under dark condition) was obtained at -0.35 V from the heterojunction structure in the 0.5M $Na_2SO_4$ solution.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.908-913
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• 1997

Multilayer NbCxC1-x/Y2O3/Ti were sputter-coated on the alumina substrate, starting with a 0.7 ㎛ thick NbCxC1-x layer grown on substrate, followed by 0.7 ㎛ thick Y2O3 layer and 1 ㎛ thick Ti layer. To find out the optimum conditions for thickness uniformity and adhesion, sputtering works have been done with the variation of sputtering power and Ar pressure. After vacuum annealing at 950℃ and 1000℃, the thermal stability of the NbCxC1-x/Y2O3/Ti coated alumina substrates has been investigated by peel off test. The coating scheme didn't cause any debonded layer after an annealing at 950℃ for 3hrs. However, it was peeled off after annealing at 1000℃ for 3hr. It was found that the thermal stability of Al2O3/NbCxC1-x/Y2O3/Ti coating scheme changed with the NbCxC1-x composition.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1895-1899
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• 2012

$SiO_2$-coated $TiO_2$ composite materials with enhanced photocatalytic activity under UV light was prepared by a simple catalytic hydrolysis method. XRD, TEM, UV-vis spectroscopy, Photoluminescence, FT-IR and XP spectra were used to characterize the prepared samples. The obvious shell-core structure was shown for obtained $SiO_2$@$TiO_2$ sample. The average thickness of the $SiO_2$ coating layer was 2-3 nm. The interaction between $SiO_2$ and $TiO_2$ restrained the recombination of excited electrons and holes. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under UV light. The photocatalytic activity of $SiO_2$@$TiO_2$ was much higher than that of P25 and mechanical mixing sample $SiO_2/TiO_2$. The possible mechanism for the photocatalysis was proposed.

• Journal of the Korean institute of surface engineering
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• v.31 no.5
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• pp.251-260
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• 1998

Stainless Steel is being used widely for various purposes due to its good corrosion resistance. There have been many researches to produce colored stainless steel by several methods such as anodizing and ion-plating. In this experiment, we $Ti_XN$(C,O) on the films SUS304, aluminium, and glass substrates with DC magentron sputterinng system made by Leybold Hereus, and strdied the structur, corrsion and pit characture of the TiXN observed by TeM image was black and whink and white columnar hed a very fine(200$\AA$) dense sturcture,and the diffraction resistance at the $3{\times}10_6A/\textrm{cm}^2$ and $10_{10}\times{cm}^2$current density were obtained in the under-stoichiometry $Ti_xN$ compound of Ar/$N_2$(Ar:$N_2$=100:6, titanium-rich compound) and the over-stoichiometry compound of Ar/$N_2$((Ar:$N_2$=60:15) respectively. When the thiness was over 1.64$\mu\textrm{m}$, good pit resistance could be obtained and its improvement was especially affected by perfect surfaceface. Typical TiN anodic polarzation curves of very unstable corrosion were observed by $Ti_xN$ film on the glass and perfect film of 3.28$\mu\textrm{m}$ thickness.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.285-293
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• 2021

High-entropy TiAlCrSiN nano-composite coating was designed to improve mold life for high temperature liquid molding. Alloy design, powder fabrication and single alloying target fabrication for the high-entropy nano-composite coating were carried out. Using the single alloying target, an arc ion plating method was applied to prepare a TiAlCrSiN nano-composite coating had a 30 nm TiAlCrSiN layers are deposited layer by layer, and form about 4 ㎛-thickness of multi-layered coating. TiAlCrSiN nano-composite coating had a high hardness of about 39.9 GPa and a low coefficient of friction of less than about 0.47 in a dry environment. In addition, there was no change in the structure of the coating after the dissolution loss test in the molten metal at a temperature of about 1100 degrees.