• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.158-163
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• 2012

In this work, we have fabricated the $TiO_2$ thin films on Si and glass, polymer insulator substrates as the self-cleaning coating of polymer insulator. $TiO_2$ films were deposited by RF magnetron sputtering method with $TiO_2$ ceramic target and $TiO_2$ films of 100 nm thickness were fabricated with various RF powers. We have investigated the optical and surface, and structural properties of $TiO_2$ films prepared with various RF powers. As a result, the value of the contact angle of $TiO_2$ thin film is increased with increasing RF power and the value of the rms surface roughness is increased. The transmittance is decreased with increasing RF power. These results indicate that the variation of the surface and optical properties of $TiO_2$ thin films is related to the sputtering effects by increasing RF power.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.751-756
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• 2016

Graphite was diffusion-bonded by hot-pressing to W-25Re alloy using a Ti interlayer. For the joining, a uniaxial pressure of 25 MPa was applied at $1600^{\circ}C$ for 2 hrs in an argon atmosphere with a heating rate of $10^{\circ}C\;min^{-1}$. The interfacial microstructure and elemental distribution of the W-25Re/Ti/Graphite joints were analyzed by scanning electron microscopy (SEM). Hot-pressed joints appeared to form a stable interlayer without any micro-cracking, pores, or defects. To investigate the high-temperature stability of the W-25Re/Ti/Graphite joint, an oxy-acetylene torch test was conducted for 30 seconds with oxygen and acetylene at a 1.3:1 ratio. Cross-sectional analysis of the joint was performed to compare the thickness of the oxide layer and its chemical composition. The thickness of W-25Re changed from 250 to $20{\mu}m$. In the elemental analysis, a high fraction of rhenium was detected at the surface oxidation layer of W-25Re, while the W-25Re matrix was found to maintain the initial weight ratio. Tungsten was first reacted with oxygen at a torch temperature over $2500^{\circ}C$ to form a tungsten oxide layer on the surface of W-25Re. Then, the remaining rhenium was subsequently reacted with oxygen to form rhenium oxide. The interfacial microstructure of the Ti-containing interlayer was stable after the torch test at a temperature over $2500^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.87-93
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• 2005

Interfacial reactions between 48Sn-52In solder and $0.1{\mu}m$ Ti/3 ${\mu}m$ Cu/Au under bump metallurgies(UBM) with various Au thickness of $0.1{\~}0.7{\mu}m$ have been investigated after solder reflow at $150^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ for 1 minute. Ball shear strength and shear energy of the Sn-52In solder bump on each UBM was also evaluated. With reflowing at $150^{\circ}C$ and $200^{\circ}C$, $Cu_6(Sn,In)_5$ and $AuIn_2$ intermetallic compounds were formed at UBW solder interface. However, UBM was consumed almost completely with reflowing at $250^{\circ}C$. While ball shear strength was not consistent with UBM/solder reactions, ball shear energy matched well with UBM/solder reactions.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.4
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• pp.432-442
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• 2011

Anodized tubular $TiO_2$ electrodes (ATTEs) with three noticeably different lengths are prepared to determine their optimum length for the photo-driven activity in the reaction of Cr(VI) reduction and hydrogen evolution. The ATTEs with ethylene glycol have longer $TiO_2$ tubes (7-15.6 ${\mu}m$) than those with hydrfluoric acid (0.6-0.8 ${\mu}m$). These samples, which differ only in the length of the tubes, with a wall thickness of ca. 20 nm, consist mainly of an anatase crystalline phase after heat treatment at $650^{\circ}C$, since the anatase crystallites at the tube walls do not undergo transformation into rutile phase, due to the constraints imposed by the wall thickness. Among them, the medium size (ca. 8 ${\mu}m$) tubes provide the optimum conditions, irrespective of the light intensity, which is explained in terms of the correlation between the amount of photons and the adsorbed electron acceptors and their location. Photocatalytic Cr(VI) reduction leads to ca. 60% reduction of Cr(VI) even under 1 sun irradiation with the medium-sized anodized $TiO_2$ tubes, but only ca. 20% with the short- and long-sized tubes. For hydrogen evolution, tubes longer than 8 ${\mu}m$ do not exhibit better performance with any light intensity.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.202-208
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• 2015

Alumina dispersion strengthening copper(ADSC) alloy has great potential for use in many industrial applications such as contact supports, frictional break parts, electrode materials for lead wires, and spot welding with relatively high strength and good conductivity. In this study, we investigated the oxidation behavior of ADSC alloys. These alloys were fabricated in forms of plate and round type samples by surface oxidation reaction using Cu-0.8Al, Cu-0.4Al-0.4Ti, and Cu-0.6Al-0.4Ti(wt%) alloys. The alloys were oxidized at $980^{\circ}C$ for 1 h, 2 h, and 4 h in ambient atmosphere. The microstructure was observed with an optical microscope(OM) and a scanning electron microscope(SEM) equipped with energy-dispersive X-ray spectroscopy(EDS). Characterization of alumina was carried out using a 200 kV field-emission transmission electron microscope(TEM). As a result, various oxides including Ti were formed in the oxidation layer, in addition to ${\gamma}$-alumina. The thickness of the oxidation layer increased with Ti addition to the Cu-Al alloy and with the oxidation time. The corrected diffusion equation for the plate and round type samples showed different oxidation layer thickness under the same conditions. Diffusion length of the round type specimen had a value higher than that of its plate counterpart because the oxygen concentration per unit area of the round type specimen was higher than that of the plate type specimen at the same diffusion depth.

• Journal of the Korean Society of Safety
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• v.23 no.5
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• pp.54-60
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• 2008

The objective of this study is to obtain the optimal process condition and the maximum decomposition efficiency by measuring the decomposition efficiency, electricity consumption, and voltage in accordance with the change of the process variables such as the frequency, maintaining time period, concentration, electrode material, thickness of the electrode, the number of windings of the electrode, and added materials etc. of the harmful atmospheric contamination gases such as NO, $NO_2$, and $SO_2$ etc. with the plasma which is generated by the discharging of the specially designed and manufactured $TiO_2$ catalysis reactor and SPCP reactor. The decomposition efficiency of the NO, the standard samples, is obtained with the plasma which is being generated by the discharge of the combination effect of the $TiO_2$ catalysis reactor and SPCP reactor with the variation of those process variables such as the frequency of the high voltage generator($5{\sim}50kHz$), maintaining time of the harmful gases($1{\sim}10.5sec$), initial concentration($100{\sim}1,000ppm$), the material of the electrode(W, Cu, Al), the thickness of the electrode(1, 2, 3mm), the number of the windings of the electrode(7, 9, 11turns), basic gases($N_2$, $O_2$, air), and the simulated gas($CO_2$) and the resulting substances are analyzed by utilizing FT-IR & GC.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.491-496
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• 2019

In this study, we prepare pure $WO_3$ inverse opal(IO) film with a thickness of approximately $3{\mu}m$ by electrodeposition, and an ultra-thin $TiO_2$ layer having a thickness of 2 nm is deposited on $WO_3$ IO film by atomic layer deposition. Both sets of photoelectrochemical properties are evaluated after developing dye-sensitized solar cells(DSSCs). In addition, morphological, crystalline and optical properties of the developed films are evaluated through field-emission scanning electron microscopy(FE-SEM), High-resolution transmission electron microscopy(HR-TEM), X-ray diffraction(XRD) and UV/visible/infrared spectrophotometry. In particular, pure $WO_3$ IO based DSSCs show low $V_{OC}$, $J_{SC}$ and fill factor of 0.25 V, $0.89mA/cm^2$ and 18.9 %, achieving an efficiency of 0.04 %, whereas the $TiO_2/WO_3$ IO based DSSCs exhibit $V_{OC}$, $J_{SC}$ and fill factor of 0.57 V, $1.18mA/cm^2$ and 50.1 %, revealing an overall conversion efficiency of 0.34 %, probably attributable to the high dye adsorption and suppressed charge recombination reaction.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.6-11
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• 2004

YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films were deposited on MgO(100) and SrTiO$_3$(100) single crystal substrates by cold-wall type MOCVD method using continuous source supplying system. Under the deposition temperature of 740∼76$0^{\circ}C$, c-axis oriented YBCO films were obtained. In case of the YBCO films deposited on MgO (100) single crystal substrate, the critical temperature (T$_{c}$) was under 81 K regardless of the deposition conditions, whereas T$_{c}$ of the YBCO films deposited on SrTiO$_3$(100) single crystal substrate was 83∼84 K. The critical current (I$_{c}$) of the YBCO film deposited on SrTiO$_3$(100) single crystal substrate for 30 min was 49 A/cm-width and the critical current density (J$_{c}$) was 0.82 MA/$\textrm{cm}^2$ to film thickness of 0.6 ${\mu}{\textrm}{m}$. I$_{c}$ increased to 84.4 A/cm-width as the deposition time increased to 50 min, but J$_{c}$ decreased to 0.53 MA/$\textrm{cm}^2$ to film thickness of 1.8 ${\mu}{\textrm}{m}$.rm}{m}$.

• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.327-333
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• 2000

Transversal SAW(Surface Acoustic Wave) filters of 340MHz were fabricated on piezoelectric substrates of the LN $128^{\circ}$ Y-X wafers. Both of spacing and width of IDT were $1.435{\mu}m$. For improving the power durability characteristics, titanium layer was inserted between aluminum electrode and piezoelectric substrate since it has high density, low thermal expansion coefficient, and good adhesive properties. Power durability was evaluated with respect to the thickness of inserted titanium layer and the temperature of heat treatment. Power durability is improved with increasing the thickness of the inserted titanium layer. Moreover, it is remarkably improved by heat treatment at the temperature of $300^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.146-154
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• 2009

It is necessary to minimize the thickness of Ni inner electrode layer and to improve the coverage of inner electrode, for the purpose of developing the ultra high-capacity multi layered ceramic capacitor (MLCC). Thus, low temperature sintering of dielectric $BaTiO_3$ ceramic should be precedently investigated. In this work, the relationship between dielectric properties of MLCC and batch condition such as mixing and milling methods was investigated in the $BaTiO_3$(BT)-Dy-Mg-Ba system with borosilicate glass as a sintering agent. In addition, several chip properties of MLCC manufactured by low temperature sintering were compared with conventionally manufactured MLCC. It was found that low temperature sintered MLCC showed better DC-bias property and lower aging rate. It was also confirmed that the thickness of Ni inner electrode layer became thinner and the coverage of inner electrode was improved through low temperature sintering.