• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.79-81
• /
• 2004

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.660-664
• /
• 2008

Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness, chemical stability, low friction and good adhesion properties. In this study, we investigated the effect of DC power on the characteristics of TiN thin films deposited on Si and glass substrates by DC magnetron sputtering using TiN target. We made TiN films of 300 nm thickness with various DC powers. The structural properties of films are investigated by x-ray diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester. The rms roughness was measured by atomic forced microscopy (AFM). In the result, TiN films had the smooth surface and exhibited (111) directions with the increase of DC Power. Also, especially in case of 175 W DC power, TiN film exhibited the maximum hardness about 8 GPa, and the critical load near 25.

• Journal of the Korean Ceramic Society
• /
• v.34 no.4
• /
• pp.373-379
• /
• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.7
• /
• pp.440-444
• /
• 2016

Titanium oxide ($TiO_2$) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of $TiO_2$ films synthesized at various ALD cycle numbers were investigated. The synthesized $TiO_2$ films exhibited higher contact angle and smooth surface. The contact angle of $TiO_2$ films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on $TiO_2$ film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of $TiO_2$ films for self-cleaning critically depended on a number of ALD-cycle.

• Journal of the Korean institute of surface engineering
• /
• v.38 no.2
• /
• pp.60-64
• /
• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• Journal of the Korean Society for Heat Treatment
• /
• v.17 no.4
• /
• pp.236-240
• /
• 2004

Effect of plasma power on PECVD process were investigated in this study. TiN and TiCN films were deposited on nitrided STD11 steel with 600W, 1,200W and 1,600W plasma power. As the plasma power was increased, the preferred orientation was reinforced from (200) to (111) and the hardness of films was improved. The low plasma power was, however, effective for improving of adhesion force of films. Regarding above properties, TiN and TiCN films were deposited by gradient plasma power. It was possible to get high hardness as well as adhesion force through gradient plasma power.

• Korean Journal of Materials Research
• /
• v.10 no.9
• /
• pp.607-611
• /
• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Journal of the Korean institute of surface engineering
• /
• v.40 no.3
• /
• pp.113-116
• /
• 2007

Titanium dioxide ($TiO_2$) films were deposited by RF reactive magnetron sputtering on non-alkali glass and single crystal MgO (100) substrate at substrate temperature of $400^{\circ}C$. Micro structures of $TiO_2$ films were investigated by XRD, FE-SEM, and Pole figure measurements. $TiO_2$ films deposited on glass substrate showed preferred orientation of anatase (101), whereas $TiO_2$ films deposited on the MgO single crystal substrate showed hetero-epitaxial anatase (100). $TiO_2$ film grown on MgO substrate showed higher photoctalytic activity than that of glass substrate.

• Journal of the Korean Society for Heat Treatment
• /
• v.4 no.2
• /
• pp.27-37
• /
• 1991

The adhesion strength of TiN films to substrate(STC 3) steel has been studied using the scratch adhesion test. Before deposition, the substrates were mechanically polished and TiN films were deposited at different substrate temperature($480^{\circ}C-540^{\circ}C$). The chemical properties of TiN films were investigated by RBS, and EDS, and the physical properties were investigated by micro-hardness tester, SEM, and X-ray diffractometer. According to results of this study, the adhesion strength of TiN films increase with increasing the deposition temperature. The roughness of the polished substrates surface were measured with a profilometer. It was observed that, as a general rule, the adhesion strength of deposited TiN films increase with decreasing the substrates surface roughness.

• Journal of Korean Ophthalmic Optics Society
• /
• v.13 no.1
• /
• pp.59-63
• /
• 2008

Purpose: Ti thin films were deposited on slide glass and CR-39 lenses using small magnetron sputtering apparatus to of Ti thin films. Methods: The thickness of Ti thin films were measured by cross section SEM, the transmittance and reflectance of them were obtained using spectrophotometer, the refractive index and extinction of them were obtained from VASE data. Results: The transmittances of Ti thin films with 60 nm, 120 nm, 140 nm thickness were a little change within the visual region from 400 nm to 750 nm, but were increased a little amount at near 400 nm. The transmittance of 60 nm, 120 nm, 140 nm Ti thickness in d-line was 30%, 25%, 20%, respectively. Also, it was shown that the refractive indices and extinction coefficients of the Ti thin films obtained from VASE were similar to those of Ti thin film offered macleod program. Conclusions: Ti films on CR-39 with these transmittances were available for sunglass lens. It was indicated that the refractive indices and extinction coefficients of the Ti thin films were decreased with the thickness of Ti thin film, for the thickness of Ti thin films was due to very thin.