• 대한치과교정학회지
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• 제36권6호
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• pp.451-464
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• 2006

본 연구는 항 교정장치의 개발에 도움이 되고자 이산화티탄 광촉매의 코팅 시 안정적이고 효과적인 방법을 찾기 위하여 시행되었다. 시판되고 있는 교정용 와이어와 브라켓에 sol-gel법, CVD (Chemical Vapor Deposition)법 및 PE-CVD (Plasma Enhanced-CVD)법으로 이산화티탄을 각각 코팅한 다음 각 방법으로 코팅된 이산화티탄 박막의 특성을 알아보고자 주사전자현미경을 이용하여 각 시편의 코팅박막 표면의 거칠기를 관찰하였고 adhesive tape pull test를 이용하여 코팅박막의 접착강도를 측정하였다. 메틸렌블루용액에 각 시편을 침지시킨 후 시간경과에 따른 메틸렌블루용액의 농도변화 측정을 통해 코팅박막의 분해능을 평가하였으며 불화나트륨 용액에 각 시편을 침지시킨 후 주사전자현미경을 이용하여 표면부식 정도를 관찰함으로써 불소화합물에 대한 내부식성을 평가하여 다음과 같은 결과를 얻었다. 코팅박막의 표면은 CVD법 및 PE-CVD법이 sol-gel법이나 코팅되지 않은 시편에 비해 더 매끄러웠다. 코팅박막의 접착강도는 PE-CVD법이 가장 높았고, CVD법, sol-gel법의 순으로 낮게 나타났다. 코팅박막의 메틸렌블루 분해능은 PE-CVD법이 가장 높았고, CVD법, sol-gel법의 순으로 낮게 나타났다. 코팅박막의 불소화합물에 대한 내부식성은 CVD법 및 PE-CVD법이 sol-gel법에 비해 높게 나타났다. 이상의 결과는 교정용 와이어 및 브라켓의 이산화티탄 광촉매 코팅 시 CVD법 및 PE-CVD법이 sol-gel법보다 적절한 방법임을 시사하였다.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.681-685
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• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.57-59
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTi03 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films.

• KIEE International Transactions on Electrophysics and Applications
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• 제12C권4호
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• 한국결정성장학회지
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• 제2권2호
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• pp.40-52
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• 1992

Titanium-iso-propoxide[$Ti(OC_3H_7)_4$]와 Tetra-ethyl-lead $[Pb({C_2}{H_5})_4]$를 사용한 MOCVD법으로 PbTi$O_3$박막을 55$0^{\circ}C$에서 증착하였다. Ar과 $O_2$를 각각 운반 및 반응기체로 사용하였으며, 열처리에 따른 박막의 두께와 굴절지수의 변화, Xtjs 회절 분석, CV 특성 측정등을 행하였다. 열처리에 따른 CV 특성 측정 결과 PbTi$O_3$는 Si기판과 계면 반응을 하는 것으로 생각되며, X선 회절 분석 결과 $PbTiO_3$의 특성 peak들이 관찰되었다. 열처리 시간 및 온도의 증가에 따라 박막의 두께는 감소하고, 굴절지수는 증가하는 경향을 보여 주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.91-91
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• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• 한국안광학회지
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• 제3권1호
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• pp.115-120
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• 1998

RF(radio-frequency) magnetron 스퍼터링 장치에 질소가스와 아르곤가스를 동시에 주입하면서 Ti 타켓을 스퍼터링하여 $TiN_x$ 박막을 유리기판위에 제작하였다. 박막제작시 RF power supply 출력을 240W로, 증착기 내부의 온도는 $200^{\circ}C$를 유지하였다. $TiN_x$ 박막은 알곤 가스를 20sccm으로 고정시킨 상태에서 질소를 3sccm부터 9sccm까지 변화시켜가며 증착시켰다. 이때 박막의 화학적 조성과 성분비를 분석하기 위하여 XPS를 사용하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.59-62
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• 1992

In this study, $TiO_2$ thin films are fabricated by Sol-Gel method and dielectric, electric and humidity sensing properties have been investigated. The structure of Sol can be changed by controlling for hydrolysis reaction condition. The uniformity of the surface on $TiO_2$ thin films is confirmed by SEM. The permittivity of $TiO_2$ thin films increases according to heat treatment temperature, whereas the conductivity of $TiO_2$ thin films decreases according to heat treatment temperature, As the results of measuring humidity sensing properties of $TiO_2$ thin films fabricated as humidity sensor, it is confirmed to have good humidity sensing properties in high humidity and low frequency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.155-159
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• 2003

Polycrystalline $Ti_{1-x}Co_xO_2$ thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{1-x}Co_xO_2$ thin films with $x{\leq}0.05$ showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the $Ti_{1-x}Co_xO_2$ (TCO) phases. On the other hand, in case of thin films above x=0.05, Co clusters formed in a homogeneous $Ti_{1-x}Co_xO_2$ Phase, and the overall ferromagnetic (FM) properties depended on both $FM_{TCO}$ and $FM_{Co}$. Co clusters with about 10nm-150nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.711-717
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• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.