• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.342.1-342.1
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• 2014

The electrical, optical and structural properties of Ti doped $In_2O_3$ (TIO) ohmic contacts to p-type GaN were investigated using linear facing target sputtering (LFTS) system. Sheet resistance and resistivity of TIO films are decreased with increasing rapid thermal annealing (RTA) temperature. Although the $400^{\circ}C$ and $500^{\circ}C$ annealed samples showed rectifying behavior, the $600^{\circ}C$ and $700^{\circ}C$ annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact between TIO and p-GaN. The annealing of the contact at $700^{\circ}C$ resulted in the lowest specific contact resistivity of $9.5{\times}10^{-4}{\Omega}cm^2$. Based on XPS depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the properties of TIO layer on rapid thermal annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.403-406
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• 2000

The piezoelectric properties and the doping effect of N $b_2$ $O_{5}$ and Mn $O_2$for 0.95PbZ $r_{x}$ $Ti_{x}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$ compositions have been investigated. In the composition of 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$the Values Of $k_{p}$ find and $\varepsilon$$_{33}$ $^{T}$ are maximized, but $Q_{m}$ Was minimized ( $k_{p}$ =0.51, $Q_{m}$ =1750). The grain size was suppressed and the uniformity of grain was improved with doping concentration of N $b_2$ $O_{5}$ for 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.005Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$sample. The values of $k_{p}$ increased and the values of $Q_{m}$ slightly decreased when 0.5 wt% of N $b_2$ $O_{5}$ is doped. And the values of $k_{p}$ was the same formation of the N $b_2$ $O_{5}$ dopant when 0.5 wt% of M $n_2$ $O_{5}$ is doped. But the values of $Q_{m}$ was deeply decreased when 0.5 wt% of Mn $O_2$is doped. As a experiment results under high electric field driving, this piezoelectric ceramics are very stable. Conclusively, piezoelectric ceramic compsiton investigated at this paper is suitable for application to high power piezoelectric devices.. devices..ices.. devices..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.30-30
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• 2008

Lead-free piezoelectric ceramics 0.97$(Na_{0.5}K_{0.5})NbO_3$-0.03Ba$(Ti_{1-x}Sn_x)O_3$ [NKN-BTS-x] ceramics doped with 1 mol% $MnO_2$ have been fabricated by a sintering technique with muffling. The $MnO_2$-doped NKN-BTS-x ceramics with x$\leq$0.2 have pure orthorhombic perovskite structure at room temperature. The dense microstructure was developed with grain growth as an increase of amount of Sn. Moreover, the addition of Sn was found to have a significant influence on piezoelectric properties. In particular, the $MnO_2$-doped NKN-BTS-0.1 ceramics showed improved piezoelectric properties of piezoelectric constant ($d_{33}$=145pC/N), relatively large electromechanical coupling factor ($k_p$=43%), dielectic constant (${\varepsilon}^T_{33}/{\varepsilon}_0$=676) dielectric loss (tan$\delta$=1.3%).

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1423-1428
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• 1994

TiO2 doped sapphire single crystals were grown by Verneuil method. The doping amount of TiO2 to Al2O3 were varied 0.1, 0.2, 0.3 wt% respectively. The grown crystals have reddish color and somewhat transparent. Optimum growth condition was established by changing growth rate and gas flow ratio. Growth condition are as follows; The flow rate range of oxygen ws 5.0~7.3 ι/min and that of hydrogen was 16~25ι/min and average growth rate was 6~8mm/hr. The basic cause of color appearence and defects in crystal were studied.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.61-67
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• 2020

BiFeO₃ with perovskite structure is a well-known material that has both ferroelectric and antiferromagnetic properties called multiferroics. However, leaky electrical properties and difficulty of controlling stoichiometry due to Bi volatility and difficulty of obtaining high relative density due to high dependency on the ceramic process are issues for BiFeO₃ applications. In this work we investigated the sintering behavior of samples with different stoichiometries and sintering conditions. To understand the optimum sintering conditions, nonstoichiometric Bi_1±xFeO_3±δ ceramics and Ti-doped Bi_1.03Fe_1-4x/3Ti_xO₃ ceramics were synthesized by a conventional solid-state route. Dense single phase BiFeO₃ ceramics were successfully fabricated using a two-step sintering and quenching process. The effects of Bi volatility on microstructure were determined by Bi-excess and Ti doping. Bi-excess increased grain size, and Ti doping increased sintering temperature and decreased grain size. It should be noted that Ti-doping suppressed Bi volatility and stabilized the BiFeO₃ phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.91-92
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• 2007

An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.

• Applied Chemistry for Engineering
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• v.19 no.3
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• pp.270-276
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• 2008

$N_2$ doped $TiO_2$ nano-sized powder was prepared using a DC arc plasma jet and investigated with XRD, BET, SEM, TEM, and photo-catalytic decomposition. Recently the research interest about the nano-sized $TiO_2$ powder has been increased to improve its photo-catalytic activity for the removal of environmental pollutants. Nitrogen gas, reacting gas, and titanium tetrachloride ($TiCl_4$) were used as the raw materials and injected into the plasma reactor to synthesize the $N_2$ doped $TiO_2$ power. The particle size and XRD peaks of the synthesized powder were analyzed as a function of the flow rate of the nitrogen gas. Also, the characteristics of the photo-catalytic decomposition using the prepared powder were studied. For comparing the photo-catalytic decomposition performance of $TiO_2$ powder with that of $TiO_2$ coating, $TiO_2$ thin films were prepared by the spin coating and the pulsed laser deposition. For the results of the acetaldehyde decomposition, the photo-catalytic activity of $TiO_{2-x}N_x$ powder was higher than that of the pure $TiO_2$ powder in the visible light region. For the methylene blue decomposition, the decomposition efficiency of $TiO_2$ powder was also higher than that of $TiO_2$ film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.959-962
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• 2001

In this study, the piezoelectric and dielectric properties and Temperature stability of resonant frequency with MnO$_2$doped 0.36Pb(Sc$_{1}$2/Nb$_{1}$2/)O$_3$- 0.25Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-0.39PbTiO$_3$(hereafter PSNNT) were investigated. The tetagonality of crystal structure was developed with increasing MnO$_2$additive content. With increasing MnO$_2$additive content, the electromechanical coupling factor and quality factor were increased. Electromechanical coupling k$_{p}$ and quality factor Q$_{m}$ at MnO$_2$doped with 2.0mol% were showed highest value of 55.6% and 252. In the case of specimen for MnO$_2$doped with 2mol%, temperature dependance of resonant frequency had a good properties.ies.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Environmental Engineering Research
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• v.20 no.4
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• pp.329-335
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• 2015

The effects of ion-doping on $TiO_2$ nanotubes were investigated to obtain the optimal catalyst for the effective decomposition of Rhodamine B (RB) through UV photocatalytic oxidation process. Changing the calcination temperature, which changed the weight fractions of the anatase phase, the average crystallite sizes, the BET surface area, and the energy band gap of the catalyst, affected the photocatalytic activity of the catalyst. The ionic radius, valence state, and configuration of the dopant also affected the photocatalytic activity. The photocatalytic activities of the catalysts on RB removal increased when $Ag^+$, $Al^{3+}$ and $Zn^{2+}$ were doped into the $TiO_2$ nanotubes, whereas such activities decreased as a result of $Mn^{2+}$ or $Ni^{2+}$ doping. In the presence of $Zn^{2+}$-doped $TiO_2$ nanotubes calcined at $550^{\circ}C$, the removal efficiency of RB within 50 min was 98.7%.