• Tribology and Lubricants
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• v.39 no.2
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• pp.72-75
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• 2023

Silicon carbide (SiC) is used as a substrate material for power semiconductors; however, SiC chemical mechanical polishing (CMP) requires considerable time owing to its chemical stability and high hardness. Therefore, researchers are attempting to increase the material removal rate (MRR) of SiC CMP using various methods. Mixed-abrasive CMP (MAS CMP) is one method of increasing the material removal efficiency of CMP by mixing two or more particles. The aim of this research is to study the mathematical modeling of the MRR of MAS CMP of SiC with SiO₂ and TiO₂ particles. With a total particle concentration of 32 wt, using 80-nm SiO₂ particles and 25-nm TiO₂ particles maximizes the MRR at 8 wt of the TiO₂ particle concentration. In the case of 5 nm TiO₂ particles, the MRR tends to increase with an increase in TiO₂ concentration. In the case of particle size 10-25 nm TiO₂, as the particle concentration increases, the MRR increases to a certain level and then decreases again. TiO₂ particles of 25 nm or more continuously decreased MRR as the particle concentration increased. In the model proposed in this study, the MRR of MAS CMP of SiC increases linearly with changes in pressure and relative speed, which shows the same result as the Preston's equation. These results can contribute to the future design of MAS; however, the model needs to be verified and improved in future experiments.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.875-882
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• 1992

Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.82-83
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• 1997

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2005.11a
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• pp.58-58
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• 2005

• Tribology and Lubricants
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• v.4 no.2
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• pp.44-51
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• 1988

Titanium carbide(TiC), Titanium nitride(TiN), and Titanium carbonnitride(Ti(C,N)) films were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$, $TiCl_4-N_2-H_2$, and $TiCl_4-CH_4-N_2-H_2$ gas mixtures, respectively. The experimental results indicate that TiC coatings compared with TiN coatings on $Si_3N_4$ -TiC ceramic have an improved microstructural property, good thermal shock resistance, and good interfacial bonding. However TiN coatings compared with TiC coatings have a low friction coefficient with steel and good chemical stability. It is found by cutting test that coated insert compared with $Si_3N_4$-TiC ceramic have a superior flank and crater wear resistance. And multilayer coating compared with monolayer coating shows a improved wear resistance.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.109-110
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• 2006

We have studied the effect of C/Ti atomic ratio of TiCx (x=0.5, 0.75 and 1.0) raw powder on the properties of the Ti-Mo-WTiC sintered hard alloy. The decrease of C/Ti atomic ratio accelerated the densification in the sintering process. The hardness was remarkably improved up to 1350HV with decreasing the C/Ti atomic ratio because of increase of TiCx phase volume content and its fine dispersion. From the results of electro-chemical tests in acid and 3% NaCl solutions, it was obvious that every alloy had excellent corrosion resistance, which meant about 200 times better than that of WC-Co cemented carbide.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.2
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• pp.471-477
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• 2012

SCM420 steel tempered after performing gear hove PACVD carbide coating on the surface after the cutting surface hardness was high. Difficult-to-cut, without coating is classified as mild as large, including materials like mild, high strength that improves tool life and productivity have limited availability. Drive to improve it in the TiCN-coated carbide call for war to the finish coating on cutting a hob skiving good workability, tool wear less, 2.5-fold increase in tool life results were obtained. Experiments using CNC Skiving hobbing machine with wet cutting conditions, cutting speed and feed rate to apply a variety of the tool wear and surface roughness data were obtained. Results from condition 2 (V = 200m/min F = 0.7mm/rev) cutting speed feed mark the cutting surface microstructure and surface roughness Rmax $4.7{\mu}m$(Ra $1.19{\mu}m$) of the data was obtained.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1218-1219
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• 2008

Thin films (< 30 nm) of titanium carbide (TiC) are coated on carbon nanotubes (CNTs), which are directly grown on nano-sized ($\sim$ 500 nm in diameter) conical-type tungsten (W) tips, by employing an inductively coupled plasma-chemical vapor deposition (ICP-CVD) technique. Any modification in structural properties (such as length to diameter ratio, crystal quality, and growth behavior) of CNTs due to TiC-coating has been monitored by using high-resolution TEM, field-emission SEM, and Raman spectroscopy. Driving voltage for obtaining the same level of emission current in CNTs-emitter is significantly reduced by TiC-coating. It is also worthy of being noted that the degradation of emission current due to prolonged operation (up to 30 h) is remarkably suppressed by TiC-coating.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1165-1171
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• 2000

Ti-C-Ni 혼합분말을 이용하여 SHS 공정에 의해 TiC-Ni 복합체를 제조하였으며, 리칭(leaching) 공정을 통하여 Ni을 제거함으로써 TiC 분말을 얻었다. TiC 분말의 특성분석을 위하여 XRD, SEM, TEM, AES 등을 사용하였다. 리칭 공정에 의해 얻어진 TiC 분말은 구형을 유지하고 있으며, 평균 입자크기는 0.4$\mu\textrm{m}$였다. 구형 TiC 분말을 다시 Ni 분말과 혼합하여 소결한 후 특성을 분석하였다. 140$0^{\circ}C$에서 소결하였을 때 TiC 입자는 구형에서 각진 형태로 변화하였다. 기계적 특성결과 상용 TiC 분말을 사용하였을 때보다 SHS 공정에 의해 제조된 TiC 분말을 사용하여 소결하였을 경우 파괴 인성값이 약 20% 증가하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.24-24
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• 2014

음극 아크 증착을 이용하여 제조한 AlTiN 박막의 공정 변화에 따른 물리적 특성 변화를 평가하였다. 또한 빗각 증착을 적용하여 제조한 AlTiN 박막의 특성을 평가하였다. Al-Ti 타겟(Al:Ti=75:25 at.%)을 음극 아크 소스에 장착하여 AlTiN 박막을 코팅하였다. 기판은 stainless steel(SUS304)과 초경(tungsten carbide; WC)을 사용하였다. 음극 아크 소스에 인가되는 전류가 낮을수록 AlTiN 박막 표면에 존재하는 거대입자의 밀도가 낮아졌으며, 공정 압력과 기판 전압이 높을수록 AlTiN 박막의 표면에 존재하는 거대입자의 밀도가 낮아지는 경향을 보였다. 코팅 공정 중 질소 유량을 변화했지만 AlTiN 박막의 특성은 변하지 았았다. AlTiN 박막 제조 시 빗각을 적용한 결과, $60^{\circ}$의 빗각을 적용한 다층 박막에서 약 33 GPa의 경도를 보였다. AlTiN 박막의 내산화성을 평가한 결과, $600^{\circ}C$이상에서 안정된 내산화성을 확인할 수 있었다.