Selective Epitaxial Growth of Si and SiGe using Si-Ge-H-Cl System for Self-Aligned HBT Applications (Si-Ge-H-Cl 계를 이용한 자기정렬 HBT용 Si 및 SiGe의 선택적 에피성장)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.16 no.7
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- pp.573-578
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- 2003