• Title/Summary/Keyword: Ti(C,N)

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Effect of Si on the Microstructure and Mechanical Properties of Ti-Al-Si-C-N Coatings (Si 함량에 따른 Ti-Al-Si-C-N 코팅막의 미세구조와 기계적 특성의 변화에 관한 연구)

  • Hong, Young-Su;Kwon, Se-Hun;Kim, Kwang-Ho
    • Journal of Surface Science and Engineering
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    • v.42 no.2
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    • pp.73-78
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    • 2009
  • Quinary Ti-Al-Si-C-N films were successfully synthesized on SUS 304 substrates and Si wafers by a hybrid coating system combining an arc ion plating technique and a DC reactive magnetron sputtering technique. In this work, the effect of Si content on the microstructure and mechanical properties of Ti-Al-C-N films were systematically investigated. It was revealed that the microstructure of Ti-Al-Si-C-N coatings changed from a columnar to a nano-composite by the Si addition. Due to the nanocomposite microstructure of Ti-Al-Si-C-N coatings, the microhardness of The Ti-Al-Si-C-N coatings significantly increased up to 56 GPa. In addition the average friction coefficients of Ti-Al-Si-C-N coatings were remarkably decreased with Si addition. Therefore, Ti-Al-Si-C-N coatings can be applicable as next-generation hard-coating materials due to their improved hybrid mechanical properties.

Formation of $TiN/TiSi_2$-bilayer by PVD method (PVD 방법에 의한 $TiN/TiSi_2$-bilayer 형성)

  • Choe, Chi-Gyu;Gang, Min-Seong;Kim, Deok-Su;Lee, Gwang-Man;Hwang, Chan-Yong;Seo, Gyeong-Su;Lee, Jeong-Yong;Kim, Geon-Ho
    • Korean Journal of Materials Research
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    • v.8 no.12
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    • pp.1182-1189
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    • 1998
  • High quality $TiN/TiSi_2$-bilayers were formed on the Si(100) substrate at room temperature and at $600^{\circ}C$ first by coevaporation of stoichiometric Si and Ti(Si:Ti = 2:1) fellowed by Ti reactive deposition in N, gas ambient, and in situ annealing in ultrahigh vacuum. Stoichiometric $Ti_{0.}N_{0.5}$, films with (111) texture and $C54-TiSi_2$ films were grown by annealing at temperatures above $700^{\circ}C$. $TiN/C54-TiSi_2$/Si(100) interface was clear and flat without agglomoration, and $CS4-TiSi_2$ film was epitxailly grown. The sheet resistance of the $TiN/TiSi_2$- bilayer decreased as the annealing temperature increased and about $2.5\omega/\textrm{cm}^2$ was obtained from the sample annealed over $700^{\circ}C$.

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Annealing Effects on TiC and TiN Thin Films (TiC와 TiN 박막의 열처리 효과)

  • 홍치유;강태원;정천기
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.162-167
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    • 1992
  • Tic and TiN layers were deposited on the stainless steel substrate by the reactive RF sputtering. Ar was used for sputtering gas and CzHz and Nz were used for reaction gas. Deposition rate increased linearly to the applied RF power, and decreased as the partial pressure ratio of sputter gas to reactive gas increased. The thin layers were stoichiometric at the partial pressure ratio of 0.03 for Tic and at partial pressure ratio of 0.05 for TiN. The morphologies and structures of the thin layers were investigated by AES, SEM and TEM. In addition, N+ ion was implanted to Tic and the resulting influence on the film and annealing effects were also examined.

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Process technology and the formation of the TiN barrier metal by physical vapor deposition (PVD 방법에 의한 TiN barrier metal 형성과 공정개발)

  • 최치규;강민성;박형호;염병렬;서경수;이종덕;김건호;이정용
    • Journal of the Korean Vacuum Society
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    • v.6 no.3
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    • pp.255-262
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    • 1997
  • Titanium nitride (TiN) films were prepared by reactive sputter deposition in mixed gas of Ar+$N_2$. The volume percentage of $N_2$ in the working gas was chosen so as to grow stoichiometric TiN films and the substrate temperature during film growth was set from room temperature to $700^{\circ}C$. Stoichiometric $Ti_{0.5}N){0.5}$ films with (111) texture were grown at temperatures over $600^{\circ}C$, while films prepared at temperatures below $600^{\circ}C$ showed N-rich TiN. The composition X and y in the $Ti_xN_y$ films determined by XPS and RBS varied within 5% with the substrate temperature. The sheet resistance of the TiN films decreases as the substrate temperature increased. TiN film prepared at $600^{\circ}C$ showed 14.5$\Omega\Box$, and it decreased to 8.9$\Omega\Box$ after the sample was annealed at $700^{\circ}C$, 30 sec in Ar-gas ambient by RTA. By far, high quality stoichiometric TiN films by reactive sputtering in the mixed gas ambient could be prepared at substrate temperature over $600^{\circ}C$.

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고집적회로에서 TiN/Ti Diffusion Barrier의 열처리에 따른 계면반응 및 구조변화에 대한 연구

  • Yu, Seong-Yong;Choi, Jin-Seog;Paek, Su-Hyon;Oh, Jae-Eung
    • ETRI Journal
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    • v.13 no.4
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    • pp.58-69
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    • 1991
  • 고집적회로에서 A1 금속공정의 diffusion barrier로 널리 사용되는 titanium nitride의 성질을 조사하였다. 실제 회로 구조의 열적 안정성을 관찰하기 위하여 준비된 TiN/Ti다층 barrier를 $600^{\circ}C$까지 열처리하여 x-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy(XTEM) 등으로 분석하였다. 열처리 온도가 증가됨에 따라 oxygen은 TiN 층의 표면과 pure-Ti 층에 pile up 된다. TiN 층의 표면에서는 $600^{\circ}C$열처리시 TiN이 분해되어 완전히 $TiO_2$가 형성되며, TiN 층 내에서는 oxygen 함량은 열처리 온도의 증가에 따라 커지고 이때 형성되는 Ti-oxide는 $TiO_2$ 보다 TiO, $Ti_2$$O_3$ 상태로 존재하게 된다. Pure-Ti 층은 열처리시 두개의 층으로 나누어 지는 데, 표면에서 침투하는 oxygen과 pure-Ti이 반응하여 Ti-oxide 층이 생기며 실리콘 기판과의 반응으로 Ti-silicide를 형성한다. $600^{\circ}C$에서 모든 Ti 층이 반응으로 소모되고 열적 stress, Ti-silicide의 grain growth, oxygen의 침입으로 TiN 층에 blistering이 발생한다.

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Characteristics of TiAlN Film on Different Buffer Layer by D.C Magnetron Sputter (D.C magnetron sputter법으로 증착된 TiAlN의 중간층에 따른 특성연구)

  • Kim, Myoung-Ho;Lee, Doh-Jae;Lee, Kwang-Min;Kim, Woon-Sub;Kim, Min-Ki;Park, Burm-Su;Yang, Kook-Hyun
    • Korean Journal of Materials Research
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    • v.18 no.10
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    • pp.558-563
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    • 2008
  • TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

A Study on the Friction and Wear Characteristics of TiC, TiN and Ti(CN) with PECVD Process (PECVD 공정에 의한 TiC, TiN 및 Ti(CN)의 마찰 마모 특성 연구)

  • Rhee Bong Goo;Jeon Ghan Yeol;Kim Jung Ki;Kim Dong Hyun;Oh Seong Mo
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.14 no.2
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    • pp.1-7
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    • 2005
  • In order to determine the wear Properties of PECVD ceramic coatings, wear process was evaluated using the coated pin of Falex Tribosystem. Coating materials deposited wear the TiC, TiN and Ti(CN). An experimental process was established to determine the tribological characteristics of friction and wear behavior under the variation of applied load, temperature and sliding distance by the Falex test machine. The experimental results indicate that TiN coating compared with TiC coating on e materials have e excellent friction and wear characteristics. However TiC coating compared i친 TiN coatings have a low friction coefficient with steel and good thermal stability, and Ti(CN) has the excellent anti-wear properly as well as the superiority of extreme pressure property. Compound coating compared wi simple coatings show improved tribological characteristics.

Microstructure, Mechanical and Wear Properties of Hot-pressed $Si_3N_4-TiC$ Composites

  • Hyun Jin Kim;Soo Whon Lee;Tadachika Nakayama;Koichi Niihara
    • The Korean Journal of Ceramics
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    • v.5 no.4
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    • pp.317-323
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    • 1999
  • Si3N4-TiC composites have been known as electrically conductive ceramics. $Si_3N_4-TiC$ composites with 2 wt% $Al_2O_3$ and 4 wt% $Y_2O_3$ were hot pressed in $N_2$ environment. The mechanical properties including hardness, fracture toughness, and flexural strength and tribological properties were investigated as a function of TiC content. $Si_3N_4-40$ vol% TiC composite was hot pressed at $1,750^{\circ}C$, $1,800^{\circ}C$, and $1,850^{\circ}C$ for 1, 3 and 5 hours in $N_2$ gas. Mechanical and tribolgical properties depended on microstructures, which were controlled by hte TiC content, hot press temperature, and hot press holding time. However, mechanical properties and tribological behaviors were degraded by the chemical reaction between TiC and N. The chemically reacted products such as TiCN, SiC, and $SiO_2$ were detered by the X-ray diffraction analysis.

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Effect of VC Addition on the Microstructure & Mechanical Properties of Ti(CN)-based Cermet (VC 첨가가 Ti(CN)계 써메트의 미세구조 및 기계적 성질에 미치는 영향)

  • 안성용;강신후
    • Journal of the Korean Ceramic Society
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    • v.35 no.12
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    • pp.1316-1322
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    • 1998
  • The amount of VC and C/N ratio in Ti(CN) was varied to investigate the effect of VC addition on the mi-crostructural change in Ti(CN)-Ni system. As the amount of VC addition increases in Ti(C0.7N0.3)-20Ni sys-tem a complete solid solution was observed in Ti(C0.7N0.3)-20Ni-25VC system. It implies that the ratio of the dissolution rates of Ti(C0.7N0.3)to that of VC is nearly 2:1 at the sintering conditions used in this study. It was found from the experiments that the system composed of the Ti(C0.7N0.3) phase exhibits a rimless structure and relatively small amount of solid solution. That is among Ti(C0.7N0.3) phase exhibits a rimless structure and relatively small amount of solid solution. This is among Ti(C1-xNx) phases the dissolution rate of Ti(C0.3N0.7) is the lowest. Also fracture toughness(KIC) of the cermet was measured by indentation method. Attentions were paid to crack propagation path to look for a dominant fracture mode and to cor-relate it with fracture toughness values. The fracture toughness was relatively high with the addition of VC content. But the addition of a large VC content reduced the overall toughness of the cermet. This result is explained with the difference in fracture mode.

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