• Journal of Microbiology and Biotechnology
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• v.11 no.4
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• pp.614-618
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• 2001

Low-threshold T-type $Ca^{2+}$ channels are distinctive voltage-operated gates for external $Ca^{2+}$ entry around a resting membrane potential due to their low voltage activation. These phenomena have already been extensively studied due to their relevance in diverse physiological functions. Recently, three T-type $Ca^{2+}$ channel ${\alpha}$$_1$subunits were cloned and their biophysical properties were characterized after expression in mammalian expression systems. In this study, ${\alpha_IG} and {\alpha_IH}$ low-threshold $Ca^{2+}$ channels were expressed and characterized in Xenopus oocytes after adding 5' and 3'untranslated portions of a Xenopus ${\beta}$ globin to improve their expression levels. The added portions dramatically enhanced the expression levels of the ${\alpha_IG} and {\alpha_IH}$ T-type channels. When currents were recorded in 10 mM $Ba^{2+}$ as the charge carrier, the activation thresholds were about -60 mV, peak currents appeared at -20 mV, and the reversal potentials were between +40 and +45. The activation time constants were very similar to each other, while the inactivation time constants of the ${\alpha_IG}$ currents were smaller than those of ${\alpha_IH}$. Taken together, the electrophysiological properties of the ${\alpha_IG} and {\alpha_IH}$ channels expressed in Xenopus oocytes were similar to the previously reported characteristics of low-threshold $Ca^{2+}$ channel currents.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.5
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• pp.46-51
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• 1989

The degradation phenomena induced by hot-carrier injection was studied from the shift of threshold voltage and subthreshold current curve in LDD NMOSFET degraded under different DC stress-biases. Threshold voltage shift ${Delta}V_{tex}$ defined in saturation region was separated into contri butions due to trapped oxide charge $V_{ot}$ and interface traps ${Delta}V_{it}$ generated from midgap to threshold voltage. Under th positive stress electric field (TEX>$V_g>V_d$) condition, the shift of threshold voltage was attributed to the electrons traped ar gate oxide but subthreshold swing was not negative stress electric field ($V_g) condition, holes seems to be injected positive charges so threshold voltage and subthreshold swing were increased.

• International Journal of Precision Engineering and Manufacturing
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• v.4 no.4
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• pp.25-31
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• 2003

A computer simulation model for investigating a two-dimensional (2-D) rounding mechanism in a centerless grinding process is described. This model includes the interference phenomena and the concept of machining elasticity. Since initial contact points are used as a reference, the result of this simulation is not affected by the location of the reference circle center and the radius of the reference circle. Also, details of the machining factor are studied by using process variables (grinding wheel speed, wheel specification, workpiece speed, dressing condition, etc.). The effect of the threshold grinding force on the size of ground workpiece is investigated. For the verification of this method, simulation results are compared with the experimental work.

• Laser Solutions
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• v.3 no.3
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• pp.39-45
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• 2000

The volume and depth of the craters produced on silicon samples during high power laser ablation show a strong nonlinear change as the laser irradiance increases across a threshold value, approximately 2.2$\times$10$\^$10/ W/㎠. Time-resolved shadowgraph images of the ablation plume reveal the ejection of large particulates from the sample for laser irradiance above the threshold, with a time delay of about 300-400 ㎱. The numerically estimated thickness of the superheated liquid layer, considering the transformation of liquid metal into liquid dielectric near the critical state, agrees with the measured agrees with crater depths. It is suggested that a phase explosion of the deep superheated liquid layer near the critical state is responsible for the measured sudden increase of crater volume and the ejection of large particulates.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.5
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• pp.34-38
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• 1978

In this Paper, the saturation behavior in the electrical phenomena of the DH Laser diode is explained theoretically using rate equnations. The carrier density approaches to ns gradually well above the threshold and theoretically expected curve of and calculated value of $\Delta$Vj are exactly equal to the experimental results which was observed, as shown. The carrier saturation factor If is proposed and we show k$\beta$ is a measure of the ideality of the sample diode. In the light of relation, the sample diode's idoality increases as f decreases.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.2
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• pp.271-277
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• 1988

The threshold fatigue crack growth and the stable crack propagation behaviors were studied in 7017 T 651, 7020 T 651 and 5083 H 115 aluminum alloys. The threshold (.DELTA. K $_{th}$) fatigue crack growth can be expressed by the equation .DELTA. $K_{th}$) = .DELTA. $K_{tho}$(1-R)$^{r}$ , where R is stress ratio, .DELTA. $K_{tho}$ is .DELTA. K at R = 0 and r is material constant. The stable crack growth rate against stress intensity factor range .DELTA. K exhibits the trilinear form with two transitions and results of investigation on crack closure phenomena showed that the crack opening stress intensity factor $K_{op}$ is approximately equal to R $K_{max}$. + .DELTA. K $_{th}$.th/.

• The Korean Journal of Applied Statistics
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• v.27 no.4
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• pp.655-665
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• 2014

An adequate understanding and response to natural hazards such as heat wave, heavy rainfall and severe drought is required. We apply extreme value theory to analyze these abnormal weather phenomena. It is common for extremes in climatic data to be nonstationary in space and time. In this paper, we analyze summer rainfall data in South Korea using exceedance values over thresholds estimated by quantile regression with location information and time as covariates. We group weather stations in South Korea into 5 clusters and t extreme value models to threshold exceedances for each cluster under the assumption of independence in space and time as well as estimates of uncertainty for spatial dependence as proposed in Northrop and Jonathan (2011).

• Journal of the Korean Applied Science and Technology
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• v.31 no.2
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• pp.329-336
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• 2014

The conductive polymer composites have attracted considerable attention in the field of industry due to their electrical properties. To understand electrical properties of the composites, their volume specific resistance was measured. Electrical conductivity results showed percolation phenomena. Percolation theories are frequently applied to describe the insulator-to-conductor transitions in the composites composed of conductive filler and insulating matrix. It was found that the percolation threshold strongly depends on the aspect ratio of filler particles. The critical concentration of percolation formed is defined as the percolation threshold. The purpose of this study was to examine electrical properties of the epoxy resins filled with nickel. The sample was prepared using vehicle such as epoxy resin replenished with nickel powder, and the evaluation on their practical use was performed in order to apply them to electric and electronic industry as well as general field. The volume specific resistance of epoxy resin composites was 4.666~13.074 when using nickel powder. Weight loss of the conductive composites took place at $350^{\circ}C{\sim}470^{\circ}C$.

• Journal of information and communication convergence engineering
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• v.17 no.2
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• pp.161-165
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• 2019

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.

• Journal of Biomedical Engineering Research
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• v.2 no.2
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• pp.127-140
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• 1981

This paper describes the mechanism of information processing in the nervous system through neuron pool model which is consisted of six single neural models. In the neuron pool model, summation characteristic of stimulus satisfies those of real nervous system and output impulse rate increases linearly to the input stimulus. Occlusion phenomena of the neuron pool model is approached to those of real nervous system and also if the threshold potential within sutlirninal fringe is increased, facilitation phenomena appreared. Therefore, the results of this study suggest that we can construct large neuron pool with many single neural models and verify the mechanism of information processing in the wide part of nervous system.