• Animal Bioscience
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• v.34 no.1
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• pp.20-25
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• 2021

Objective: The objective of the study was to investigate the possibility of utilizing an early litter size trait as an indirect selection trait for longevity and to estimate genetic parameters between sow stayability and litter size at different parities using a linear-threshold model for longevity in Thai Large White (LW) and Landrace (LR) populations. Methods: The data included litter size at first, second, and third parities (NBA1, NBA2, and NBA3) and sow stayability from first to fourth farrowings (STAY14). The data was obtained from 10,794 LR and 9,475 LW sows. Genetic parameters were estimated using the multiple-trait animal model. A linear-threshold model was used in which NBA1, NBA2, and NBA3 were continuous traits, while STAY14 was considered a binary trait. Results: Heritabilities for litter size were low and ranged from 0.01 to 0.06 for both LR and LW breeds. Similarly, heritabilities for stayability were low for both breeds. Genetic associations between litter size and stayability ranged from 0.43 to 0.65 for LR populations and 0.12 to 0.55 for LW populations. The genetic correlation between NBA1 and STAY14 was moderate and in a favorable direction for both LR and LW breeds (0.65 and 0.55, respectively). Conclusion: A linear-threshold model could be utilized to analyze litter size and sow stayability traits. Furthermore, selection for litter size at first parity, which was the genetic trait correlated with longevity, is possible when one attempts to improve lifetime productivity in Thai swine populations.

• The Korean Journal of Applied Statistics
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• v.36 no.4
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• pp.295-307
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• 2023

The heterogeneous autoregressive (HAR) model is a simple linear model that is commonly used to explain long memory in the realized volatility. However, as realized volatility has more complicated features such as conditional heteroscedasticity, leverage effect, and volatility clustering, it is necessary to extend the simple HAR model. Therefore, to better incorporate the stylized facts, we propose a threshold HAR model with GARCH errors, namely the THAR-GARCH model. That is, the THAR-GARCH model is a nonlinear model whose coefficients vary according to a threshold value, and the conditional heteroscedasticity is explained through the GARCH errors. Model parameters are estimated using an iterative weighted least squares estimation method. Our simulation study supports the consistency of the iterative estimation method. In addition, we show that the proposed THAR-GARCH model has better forecasting power by applying to the realized volatility of major 21 stock indices around the world.

• Journal of Environmental Health Sciences
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• v.50 no.4
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• pp.229-236
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• 2024

The linear no-threshold (LNT) model is an assumption that explains the dose-response relationship for health risks, allowing for linear extrapolation from high doses to low doses without a threshold. The selection of an appropriate model for low-dose risk evaluation is a critical component in the risk assessment process for hazardous agents. This paper reviews the LNT model in light of epidemiological evidence from major international consortia studying ionizing radiation. From a scientific perspective, substantial evidence supporting the LNT model has been observed in epidemiological studies of low-dose ionizing radiation exposure, although some findings suggest non-linear dose relationships for certain cancer sites and variations across populations. From a practical standpoint, the LNT remains the most useful model for radiation protection purposes, with no alternative dose-response relationship proving more appropriate. It is important to note that the LNT model does not directly reflect the magnitude of risk at the population level, and this distinction should be clearly communicated to the public. While applying the LNT model as the principal basis for radiation protection, continuous research into various dose-response relationships is crucial for advancing our understanding.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.473-481
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• 2012

For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived three-dimensionally. Using Taylor's series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the drain-induced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.

• Laser Solutions
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• v.11 no.4
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• pp.13-20
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• 2008

The damage threshold measurement of gold films is carried out with ultrashort-pulse laser. An enhanced two temperature model is developed to encounter the limitation of linear modeling during ultrashort pulse laser ablation. In which the electron heat capacity is calculated using a quantum mechanical approach based on a Fermi-Dirac distribution, temperature-dependent electron thermal conductivity valid beyond the Fermi temperature is adopted, and reflectivity and absorption coefficient are estimated by applying a temperature-dependent electron relaxation time. The predicted damage threshold using the proposed enhanced modelclosely agreed with experimental results, demonstrating the importance of considering transient thermal and optical properties in the modeling of ultrashort pulse laser ablation.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.36 no.1
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• pp.36-43
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• 2013

Many retailer store managers are experiencing the situation where some customers balk at purchasing products if the stock is low. In this paper, we extend the single period newsvendor model in an environment of customer balking behavior occurring at double threshold inventory levels assuming the chance of sales during balking is a discrete function of inventory level. Our analysis is based on the assumption that only the mean and the variance of demand are known, without assuming any specific distributional form. We derive the explicit general expression of optimal order quantity with unknown distribution of demand with double threshold inventory levels of customer balking. Then, we illustrate the concepts developed here through simple numerical examples and conclude the future research topics under balking situation.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.60-64
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• 2024

The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2511-2516
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.741-744
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.