• Title/Summary/Keyword: Threshold energy

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Soild-state reaction in Ti/Ni multilayers

  • ;;;;Y.V.Kudryavtsev;B.Szymanski
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.140-140
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    • 1999
  • Ti/Ni multilayered films (MLF) are ideal for neutron optics particularly in neutron guides and focusing devices. This system also possesses the tendency of amorphization through a solid-state reaction (SSR). This behaviors are closely related to the electronic structures and both magneto-optical (MO) and optical properties of metals depend strongly on their electron energy structures. Mutual inter-diffusion of the Tin and Ni atoms in the MLF caused by a low temperature annealing should decrease the thickness of pure Ni, as well as change the chemical and atomic order in the reactive zone. The application of the MO spectroscopy to the study of SSR in the MLF allows us to obtain an additional information on the changes in the atomic and chemical orders in the interface region. The optical one has no restriction on the magnetic state of the constituent sublayers. Therefore, the changes in magnetic, MO and optical properties of the Ti/Ni MLF due to SSR can be expected. To the best of our knowledge, the MO and optical spectroscopies were not used for this purpose. SSR has been studied in the series of the Ti/Ni MLFs with bilayer periods of 0.65-22.2nm and constant ratio of the Ti to Ni sublayers thickness by using MO and optical spectroscopies as well as an x-ray diffraction. The experimental MO and optical spectra are compared with the computer-simulated spectra, assuming various interface models. The relative changes in the x-ray diffraction spectra and MO properties of the Ti/Ni MLF caused by annealing are bigger for the multilayers with "thick" sublayers, or the SSR with the formation of amorphous alloy takes place mainly in the Ti/Ni multilayers with "thick" sublayers, while in the nominal threshold thickness of the Ni-sublayer for the observation of the equatorial Kerr effect in the as-deposited and annealed Ti/Ni MLFs of about 3.0 and 4.5nm thick is explained by the formation of amorphous alloy during the deposition or the formation of the nonmagnetic alloyed regions between pure components as a result of the SSR. For the case of Ti/Ni MLF the MO approach is more sensitive for the determination of the thickness of the reacted zone, while x-ray diffraction is more useful for structural analyses.structural analyses.

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ITO, PR, 격벽 재료의 레이저 직접 미세가공

  • Lee, Cheon;Lee, Gyung-Chul;Ahn, Min-Young;Lee, Hong-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.80-80
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    • 1999
  • 플라즈마 디스플레이 패널(PDP)의 공정을 간단히 하기 위하여 포토레지스트, ITO, 격벽재료를 Ar+ laser(λ-514 nm, CW)와 Nd:YAG laser(λ=532, 266nm, pulse)로 직접 패터닝 하였다. 레이저에 의한 포토레지스트의 패턴결과, 아르곤 이온 레이저의 포토레지스트 가공의 반응 메카니즘은 레이저 빔의 열에 의한 시료 표면의 국부적인 온도상승에 의한 용융작용이며, 그 결과 식각 후 형성된 패턴의 단면 모양도 레이저빔의 profile과 같은 가우시안 형태를 나타낸다. Nd:YAG 레이저의 4고조파(532nm)를 이용한 경우 200$\mu\textrm{m}$/sce의 주사속도에서 포토레지스트를 패턴하기 위한 임계에너지(threshold energy fluence) 값은 25J/cm2이며, 약 40J/cm2의 에너지 밀도에서 하부기판의 손상이 발생하기 시작하였다. 글미 1은 Nd:YAG 레이저 4고조파를 이용하여 포토레지스트를 식각한 경우 SEM 표면사진(위)과 단차특정기에 의한 단면형상(아래)이다. ITO 막의 레이저에 의한 직접 패턴 결과, ITO 막은 레이저 펄스에 의한 급속 가열 및 증발에 의한 메커니즘으로 식각이 이루어지며, 레이저 파장에 따른 광흡수 정도의 차이에 의해 2고조파 (532nm)에서 ITO 막의 가공 품질이 4고조파(266nm)에 비해 우수하며 패턴의 폭도 출력에 따라 제어가 용이하였다. 그림 2는 Nd:YAG 레이저 2고조파를 이용하여 ITO를 식각한 경우 SEM표면 사진(위)과 단차측정기에 의한 단면형상(아래)이다. 격벽 재료의 레이저에 의한 직접 패턴 결과, Ar+ 레이저(514nm)는 출력 밀도 32NW/cm2에서 격벽을 유리 기판의 경계면까지 식각하였다. Nd:YAG 레이저(532nm)는 laser fluence가 6.5mJ/cm2에서 격벽을 식각하기 시작하였으며, 19.5J/cm2에서 유리기판의 rudraus(격벽 두께 130$\mu\textrm{m}$)까지 식각하였다.

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Design of MAC Algorithm Supporting Adaptive Transmission Rate on VANET (VANET에서 적정 전송속도를 지원하는 MAC 설계)

  • Park, Sanghyun;Kim, Nam-Il
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.11
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    • pp.132-138
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    • 2012
  • VANET(Vehicular Ad-hoc Network), standardization of IEEE 802.11p specification is in process. 802.11 MAC protocol grants all nodes equal opportunity to acquire channel without regard to their bit-rates, making it possible for lower bit-rate nodes to occupy communication channel for a fair amount of time thus keeping the higher bit-rate nodes from acquiring connection channel which downward-equalize the overall network performance. Also with the 802.11p MAC protocol, the probability of collision occurring increases as the number of nodes grow. The proposed algorithm is a new MAC protocol that guarantees nodes with acquired channel a firm priority over other nodes for a fixed amount of time with TXOP concept added to 'packet burst' according to the current transmitting speed. This newly designed algorithm allows the construction of wireless network with enhanced network throughput, decreased probability of collisions as well as providing the means to grant each node a fair chance of acquiring connection according to their channel conditions. The algorithm sets the CW's (Contention Window) width wider than the standard's and modulates the continuous transmitting threshold value depending on channel acquired time, thus improving the overall performance of the network.

Odor Emission from Sediments in Sewer Systems and Odor Removal using an Electrolytic Oxidation Process (하수관거에 퇴적된 유기물에 의한 악취 발생과 산화전리시스템을 이용한 악취 저감)

  • Ahn, Hae-Young;Shin, Seung-Kyu;Song, Ji-Hyeon
    • Journal of Korean Society for Atmospheric Environment
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    • v.27 no.6
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    • pp.703-710
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    • 2011
  • Odor emission from domestic sewer systems has become a serious environmental problem. An investigation on a sewer manhole revealed that anaerobic decay of sediment organic matters (SOMs) and related declines of oxidation reduction potential (ORP) in the sediment layer were the main reason of the production of volatile sulfur compounds. In addition, as the anaerobic decaying period continued, the odor intensity rapidly increased with increasing concentrations of $H_2S$ and dimethyl sulfide. As a feasible method to control SOMs and to minimize odor emission potentials, an electrolytic oxidation process has been employed to the sediment sludge phase. In this study, voltages applied to the electrolytic oxidation process were varied as a main system parameter, and its effects on odor removal efficiencies and reaction characteristics were investigated. At the applied voltages greater than 20 V, the system efficiently oxidized the organic matter, and the ORP in the sludge phase increased rapidly. As a consequence, the removal efficiency of hydrogen sulfide was found to be >99% within 60 minutes of the electrolytic oxidation. Overall, the electrolytic oxidation process can be an alternative to control odor emission from sewer systems, and a threshold input energy needs to be determined to achieve effective operation of the process.

Removal of nitrogen and sulfur odorous compounds and their precursors using an electrolytic oxidation process (산화전리수를 이용한 질소와 황 계열 악취 및 악취전구물질의 제거)

  • Shin, Seung-Kyu;An, Hea-Yung;Kim, Han-Seung;Song, Ji-Hyeon
    • Journal of Korean Society of Water and Wastewater
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    • v.25 no.2
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    • pp.223-230
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    • 2011
  • An electrolytic oxidation process was applied to remove odorous compounds from non-point odor sources including wastewater pipelines and manholes. In this study, a distance between the anode and the cathode of the electrolytic process was varied as a system operating parameters, and its effects on odor removal efficiencies and reaction characteristics were investigated. Odor precursors such as sediment organic matters and reduced sulfur/nitrogen compounds were effectively oxidized in the electrolytic process, and a change in oxidation-reduction potential (ORP) indicated that an stringent anaerobic condition shifted to a mild anoxic condition rapidly. At an electrode distance of 1 cm and an applied voltage of 30 V, a system current was maintained at 1 A, and the current density was 23.1 $mA/cm^{2}$. Under the condition, the removal efficiency of hydrogen sulfide in gas phase was found to be 100%, and 93% of ammonium ion was removed from the liquid phase during the 120 minute operating period. Moreover, the sulfate ion (${SO_4}^{2-}$) concentration increased about three times from its initial value due to the active oxidation. As the specific power consumption (i.e., the energy input normalized by the effective volume) increased, the oxidation progressed rapidly, however, the oxidation rate was varied depending on target compounds. Consequently, a threshold power consumption for each odorous compound needs to be experimentally determined for an effective application of the electrolytic oxidation.

Development of Herbal Drink to Improve Aerobic Capacity in Elite Endurance Runners (건각탕(健脚湯) 섭취가 엘리트 장거리 달리기 선수의 유산소성 능력 향상에 미치는 영향)

  • Lee, Jeong-Pil;Jung, Hee-Jung;Ahn, Kyoo-Seok;Oh, Jae-Keun;Choe, Yeong-Jin
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.20 no.3
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    • pp.563-571
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    • 2006
  • The purpose of this study was to identify the effects of oriental herbal drink to improve aerobic capacity in elite endurance runners. 14 male elite college runners were participated and divided into two group; i ) oriental herbal drink group (OG), ii ) placebo group (PG). All subjects were completed treadmill exercise protocol using GXT at before (B) and after (A) experimental treatment of one week. The V02max, anaerobic threshold (AT) were measured by gas analysis and heart rate (HR) were measure by polar system at pre, max, post, post 30 min and post 60 min. Blood samples were collected to analyze blood components. The V02max were significantly increased in OGA compared to OGB whereas the V02max and AT in OGA were significantly higher than PGA. The blood lactate concentration were shown higher decrease rate in OGA compared to Doth OGB and PGA during recovery whereas LDH and Na were significantly increased in OGA compared to both OGB and PGA. The blood concentrations of CI and K were significantly increased in OGA compared to PGA. There were no significant differences were founded in WBC, RBC, Hct, Hb and other components associated with energy sources(glucose, TG, TC, HDL, LDL, creatinine, CPK). These results suggested that this oriental herbal drink can be administrated to improve aerobic capacity in long distance runners.

Study of the Nitrogen-Beam Irradiation Effects on ALD-ZnO Films (ALD로 성장된 ZnO박막에 대한 질소이온 조사효과)

  • Kim, H.S.
    • Journal of the Korean Vacuum Society
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    • v.18 no.5
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    • pp.384-389
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    • 2009
  • ZnO, a wurtzite lattice structure, has attracted much attention as a promising material for light-emitting diodes (LEDs) due to highly efficient UV emission resulting from its large band gap of 3.37 eV, large exciton binding energy of 60 meV, and low power threshold for optical pumping at room temperature. For the realization of LEDs, both n-type ZnO and p-type ZnO are required. Now, n-type ZnO for practical applications is available; however, p-type ZnO still has many drawbacks. In this study, ZnO films were grown on glass substrates by using atomic layer deposition (ALD) and the ZnO films were irradiated by nitrogen ion beams (20 keV, $10^{13}{\sim}10^{15}ions/cm^2$). The effects of nitrogen-beam irradiation on the ZnO structure as well as the electrical property were investigated by using fieldemission scanning electron microscopy (FESEM) and Hall-effect measurement.

Influence of Oxygen Partial Pressure on ZnO Thin Films for Thin Film Transistors

  • Kim, Jae-Won;Kim, Ji-Hong;Roh, Ji-Hyoung;Lee, Kyung-Joo;Moon, Sung-Joon;Do, Kang-Min;Park, Jae-Ho;Jo, Seul-Ki;Shin, Ju-Hong;Yer, In-Hyung;Koo, Sang-Mo;Moon, Byung-Moo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.106-106
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    • 2011
  • Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

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Digital Hologram Encryption using Discrete Wavelet Packet Transform (이산 웨이블릿 패킷 변환을 이용한 디지털 홀로그램의 암호화)

  • Seo, Young-Ho;Choi, Hyun-Jun;Kim, Dong-Wook
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.11C
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    • pp.905-916
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    • 2008
  • In this paper, we propose a new method which estimates and encrypts significant component of digital hologram using discrete wavelet packet transform (DWPT). After analyzing the characteristics of digital hologram in spatial and frequency domain, the required information for ciphering digital hologram was extracted. Based on this information an ciphering method was proposed with wavelet transform and packetization of subbands. The proposed algorithm can encrypt digital hologram in various robust from selecting transform-level and energy threshold. From analyzing the encryption effect numerically and visually, the optimized parameter for encryption is presented. Without additional analyzing process, one can encrypt efficiently digital hologram using the proposed parameter. Although only 0.032% among total data is encrypted, the reconstructed object dose not identified. The paketization information of subbands and the cipher key can be used for the entire secret key.

Quantitative Analysis of Skarn Ore Using 3D Images of X-ray Computed Tomography (3차원 X-ray 단층 화상을 이용한 스카른 광석의 정량분석 연구)

  • Jeong, Mi-Hee;Cho, Sang-Ho;Jeong, Soo-Bok;Kim, Young-Hun;Park, Jai-Koo;Kaneko, Katsuhiko
    • Journal of the Mineralogical Society of Korea
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    • v.23 no.3
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    • pp.211-217
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    • 2010
  • A micro-focus X-ray computed tomography (CT) was employed to determine quantitative phase analysis of skarn Zn-Pb-Cu ore by nondestructive visualization of the internal mineral distribution of a skarn ore. The micro CT images of the ore were calibrated to remove beam hardening artifacts, and compared with its scanning electron microscope (SEM) images to set the threshold of CT number range covering sulfide ore minerals. The volume ratio of sulfide and gangue minerals was calculated 20.5% and 79.5%, respectively. The quantitative 3D X-ray CT could be applied to analyse the distribution of economic minerals and their recovery.