• Journal of IKEEE
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• v.15 no.2
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.539-542
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• 2011

Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying $O_2$ ratios. The device performance is significantly affected by adjusting the $O_2$ ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• Proceedings of the IEEK Conference
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• 2009.05a
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• pp.159-162
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• 2009

The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

• International Journal of Internet, Broadcasting and Communication
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• v.10 no.1
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• pp.48-60
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• 2018

The experiments were carried out during a total of nine sessions, that is, 3 sessions over 3 days. The CK levels decreased depending on the experiment session ($P{\leq}0.05$), but there was no significant difference ($P{\leq}0.05$) between the experimental group and the control group. Pressure threshold levels significantly decreased depending on the experiment session and the treatments had higher effects in the experimental group. VAS figures significantly decreased depending on the experiment session ($P{\leq}0.005$) and the treatments had higher effects in the experimental group. The results of this study verified the contention that applying vibration treatment immediately after inducing DOMS is more effective in terms of pressure pain threshold (PPT) and VAS, but not CK levels, than applying the treatment 24 hours after inducing DOMS. In addition, the experimental group showed a statistically significant difference compared to the control group. Therefore, it was concluded that applying vibration treatment immediately after inducing DOMS can be used as a DOMS treatment method.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.9-17
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• 1994

This paper proposes Double queue threshold QLT(Queue Length Threshold) algorithm and Hysteresis effect QLT algorithm. as being DPS(Dynamic Priority Scheduling) techniques. in order to advance the processing of multiple class traffics. Also, the performance of the proposed algorithms is analyzed through computer simulations,and the priority scheduling is analyzed using a retrial queue with two types of calls. Our simulation results show that the performance of the proposed Double queue length threshold QLT algorithm is superior to that of the conventinal QLT algorithm for 2 or more classes delay sensitive traffics. Also we find that Hysteresis effecT QLT algorithm is better mechanism than that of the existing QLT for real time and non-real time traffics.

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.740-745
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• 2000

Effects of porous fences on the wind erosion of sand particles from a triangular pile were investigated experimentally. The porous fence and sand pile were installed in a simulated atmospheric boundary layer. The mean velocity and turbulent intensity profiles measured at the sand pile location were well fitted to the atmospheric boundary layer over the open terrain. Particle motion was visualized to see the motion of windblown sand particles qualitatively. In addition, the threshold velocity were measured using a light sensitive video camera with varying the fence porosity ${\varepsilon}$. As a result, various types of particle motion were observed according to the fence porosity. The porous wind fence having porosity ${\varepsilon}=30%$ was revealed to have the maximum threshold velocity, indicating good shelter effect for abating windblown dust particles.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05a
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• pp.443-448
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• 1998

With using artificial neural networks (ANNs), an analytical study related to the heated length effect on critical heat flux(CHF) has been carried out to make an improvement of the CHF prediction accuracy based on local condition correlations or table. It has been carried out to suggest a feasible criterion of the threshold length-to-diameter (L/D) value in which heated length could affect CHF. And within the criterion, a L/D correction factor has been developed through conventional regression. In order to validate the developed L/D correction factor, CHF experiment for various heated lengths have been carried out under low and intermediate pressure conditions. The developed threshold L/D correlation provides a new feasible criterion of L/D threshold value. The developed correction factor gives a reasonable accuracy fur the original database, showing the error of -2.18% for average and 27.75% for RMS, and promising results for new experimental data.

• International Journal of Control, Automation, and Systems
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• v.6 no.2
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• pp.214-222
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• 2008

Bode principle is applied to carry out traffic control for rate based ATM network, which guarantees the higher buffer utilization, buffer overflow-free, and well utilization of bandwidth. The principle confirms the relationship between the threshold of buffer queue and the network bandwidth, as well as the relationship between the threshold of buffer and source input rate. Theoretic warrant of the buffer threshold is proposed. The reference range of source input rate is provided in theory, which makes the source end respond to the change of network state rapidly and dynamically, and then the effect of time delay to the traffic control is avoided. Simulation results show that the better steady and dynamic performances of networks are obtained by Bode principle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.86-90
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• 1992

We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.

• Proceedings of the KSR Conference
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• 2008.11b
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• pp.1312-1320
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• 2008

In this paper, we analyzed the error rate performance of convolution coded 16 QAM signal with Optimum Threshold Detection with maximum ratio combining diversity in Rician Fading Environments. The performance of 16-QAM signal with CTD (conventional threshold detection) which employs convolution coding technique was analyzed and the performance improvement of convolution coded 16-QAM signal with OTD (optimum threshold detection) which is varied according to fading parameter "K" and AWGN in Rician Fading channel was simulated. As a result of analysis, it was shown the effect of performance improvement to overcome the environment of mobile radio data communication channel.