• Journal of International Academy of Physical Therapy Research
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• v.10 no.4
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• pp.1879-1888
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• 2019

Background: The treatment of pain in the iliotibial band friction syndrome has been difficult to determine, according to studies to date. However, recent studies have suggested that flexibility in the subacute stage of pain in the iliotibial band friction syndrome may help reduce pain. Objective: To investigate the immediate effect on pressure pain threshold and flexibility of the tensor fascia latae and iliotibial band by applying static and dynamic myofascial release foam rolling and self-stretching to adults with shortening iliotibial band. Design: Randomized controlled trial Methods: In this study, 50 subjects who were selected in advance as a randomized controlled trial were randomly allocated using a R Studio program. The included subjects were randomly allocated to three intervention groups. The static self-myofascial release 18 people, dynamic self-myofascial release group 16 people separated the self-stretching group 16 people and conducted a homogeneity check in advance. Before the start of the experiment, after of the experiment, 5 minutes after the end of the experiment, the pressure pain threshold and flexibility change for each part were measured. Results: The results of this study showed that the static self-myofascial release showed a significant difference in the pressure pain threshold in the tensor fascia latae and middle, lower part of the iliotibial band, compared with the other intervention groups (p<.05). In change of flexibility, the static self-myofascial release was significantly different than the other intervention groups (p<.05). Conclusion: The result of this study suggest that static self-myofascial release using foam roller may help to improve the pain and flexibility of the iliotibial band and to apply it as a more discerning intervention.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.10
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• pp.2305-2309
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• 2010

In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off and drain induced barrier lowing have been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.

• Environmental and Resource Economics Review
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• v.27 no.2
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• pp.363-397
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• 2018

We study the impact of loss-aversion and the threat of critical damages from insufficient pollutant abatement, which we jointly call threshold concerns, on the outcome of international environmental agreements. We aim to understand whether concerns for a critical level of damages induce cooperation among countries faced with the well-known free-riding problem, and yield sufficient emission reductions to avoid exceeding the threshold. Specifically, we focus on loss-averse countries negotiating under the threat of either high or low environmental damages. Under symmetry, when countries display identical degrees of threshold concern, we show that such beliefs have a positive effect on reducing the emission levels of both signatories to the treaty and non-signatories, leading to weakly larger coalitions of signatories than in the absence of reference dependence. We then introduce asymmetry, by allowing countries to differ in the degree of concern about the damages. We show that stable coalitions are mostly formed by the countries with higher threshold concerns. When enough countries exhibit standard preferences, the coalition size may diminish, regardless of the degree of concern by the others.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.17-23
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• 2010

In this paper, a new analytical model for deriving the threshold voltage of a short-channel bulk-type MOSFET is suggested. Using the Fourier coefficient method, the Laplace equation in the oxide region and the Poisson equation in the depleted silicon region have been solved two-dimensionally. Making use of them, the minimum surface potential is derived to describe the threshold voltage. Simulation results show good agreement with the dependencies of the threshold voltage on the various device parameters and applied bias voltages.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.3
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• pp.591-596
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• 1994

Threshold dependence on stripe width in gain-guided single quantum well lasers has been examined by complex domain effective index method. It is found, in narrow stripe regime, that the lateral optical confinement estimated by newly introduced parameters decreases very rapidly as the transverse optical confinement factor decreases. Thus, in a single quantum well laser with a usually very small, the optical confinement may become very poor depending on stripe width not only in the transverse but also in the lateral direction, further enhancing the gain saturation and often leading to an anomalously high threshold current. The understanding of rather anomalous threshold dependence on stripe width will be very important in optimization of quantum well laser diode structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.1-7
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• 2009

In this paper, a simple analytical model for deriving the threshold voltage of a short-channel intrinsic-body SDG SOI MOSFET is suggested. Using the iteration method, both Laplace equations in intrinsic silicon body and gate oxide are solved two-dimensionally. Obtained potential distributions in both regions are expressed in terms of fourth and fifth-order of the coordinate perpendicular to the silicon channel direction. Making use of them, the surface potential is obtained to derive the threshold voltage in a closed-form. Simulation results show the fairly accurate dependencies of the threshold voltage on the various device parameters and applied bias voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.9-16
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• 2008

In this paper, a simple analytical model for deriving the threshold voltage of a short-gate SOI MESFET is suggested. Using the iteration method, the Poisson equation in the fully depleted silicon channel and the Laplace equation in the buried oxide region are solved two-dimensionally, Obtained potential distributions in each region are expressed in terms of fifth-order of $\chi$, where $\chi$ denotes the coordinate perpendicular to the silicon channel direction. From them, the bottom channel potential is used to describe the threshold voltage in a closed-form. Simulation results show the dependencies of the threshold voltage on the various device geometry parameters and applied bias voltages.

• Carbon letters
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• v.15 no.2
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• pp.117-124
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• 2014

Conductive polymer composites (CPCs) consist of a polymeric matrix and a conductive filler, for example, carbon black, carbon fibers, graphite or carbon nanotubes (CNTs). The critical amount of the electrically conductive filler necessary to build up a continuous conductive network, and accordingly, to make the material conductive; is referred to as the percolation threshold. From technical and economical viewpoints, it is desirable to decrease the conductive-filler percolation-threshold as much as possible. In this study, we investigated the effect of polymer/conductive-filler interactions, as well as the processing and morphological development of low-percolation-threshold (${\Phi}c$) conductive-polymer composites. The aim of the study was to produce conductive composites containing less multi-walled CNTs (MWCNTs) than required for pure polypropylene (PP) through two approaches: one using various mixing methods and the other using immiscible polymer blends. Variants of the conductive PP composite filled with MWCNT was prepared by dry mixing, melt mixing, mechanofusion, and compression molding. The percolation threshold (${\Phi}c$) of the MWCNT-PP composites was most successfully lowered using the mechanofusion process than with any other mixing method (2-5 wt%). The mechanofusion process was found to enhance formation of a percolation network structure, and to ensure a more uniform state of dispersion in the CPCs. The immiscible-polymer blends were prepared by melt mixing (internal mixer) poly(vinylidene fluoride) (PVDF, PP/PVDF, volume ratio 1:1) filled with MWCNT.

• Journal of Institute of Control, Robotics and Systems
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• v.17 no.6
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• pp.587-595
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• 2011

In this paper, we focus on the issue of automatic selection for multi-level threshold, and we greatly improve the efficiency of Otsu's method for image segmentation based on genetic algorithm. We have investigated and evaluated the performance of the Otsu and Valley-emphasis threshold methods. Based on this observation we propose a method for automatic threshold method that segments an image into more than two regions with high performance and processing in real-time. Our paper introduced new peak detection, combines with evolution algorithm using MAGA (Modified Adaptive Genetic Algorithm) and HCA (Hill Climbing Algorithm), to find the best threshold automatically, accurately, and quickly. The experimental results show that the proposed evolutionary algorithm achieves a satisfactory segmentation effect and that the processing time can be greatly reduced when the number of thresholds increases.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.16-23
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• 2007

For a fully depleted SOI type symmetric double gate MOSFET, a simple expression for the threshold voltage has been derived in a closed-form To solve analytically the 2D Poisson's equation in a silicon body, the two-dimensional potential distribution is assumed approximately as a polynomial of fourth-order of x, vertical coordinate perpendicular to the silicon channel. From the derived expression for the surface potential, the threshold voltage can be obtained as a simple closed-form. Simulation result shows that the threshold voltage is exponentially dependent on channel length for the range of channel length up to $0.01\;[{\mu}m]$.