• Title/Summary/Keyword: Threshold Switching

Search Result 209, Processing Time 0.023 seconds

Analysis of ultra-short optical pulse generation by LD gain-switching (LD gain-switching에 의한 초단 광 펄스 발생 해석)

  • 김윤중;김동각;김창민
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.34D no.10
    • /
    • pp.85-92
    • /
    • 1997
  • For a InGaAsP buried - heterostructrue $1.3\mu\textrm{m}$ LD with fabry-perot cavity structure, the procedures of ultra-short optical pulse genration ar eanalyzed by simulating the rate equations. Investigting the effects of injected current pulse parameters such as bias $J_b$, pulse width $T_d$ and pulse amplitude $J_p$ on the generated optical pulses, we derive the optimum conditions to obtain a single optical pulse with strong peak value. We also observe that the repetition rate of current pulses needs to be restricted under a certain threshold to generate a train of single optical pulses, and that the period doubling phenomenon takes place by increasing the repitition rate.

  • PDF

A Study on DC side Model of Current Source type Active Power Filters (전류원형 능동 전력 필터의 직류측 모델에 관한 연구)

  • Han, Hak-Guhn;Park, In-Gyu;Park, Jong-Keun
    • Proceedings of the KIEE Conference
    • /
    • 1989.11a
    • /
    • pp.180-185
    • /
    • 1989
  • In the current source type active power filter, the DC current source is implemented using an inductor with large inductance by maintaining the inductor current constantly. In this case, to compensate the loss of the switching devices of the power converter and the inductor, some real power should be supplied to the filter from the source. This process is analyzed through the equivalent circuit which expresses the loss of the switching devices and the inductor with the equivalent resistor R. This work discusses the validation of this DC side equivalent circuit and points out the problems, through the experiments using the experimental active power filter with 220V, 10KVA ratings, and suggests a more accurate equivalent circuit which puts the saturation voltage of the power transistors and the threshold voltage of the diodes into consideration.

  • PDF

A Study on Electro-optical Characteristics Dependent on Surface Anchoring Energy in the Fringe-field Switching Mode (FFS 모드에서 표면 엥커링에너지에 따른 전기광학특성의 연구)

  • Yu, In-Ho;Zhong, Zhen-Xin;Jang, Won-Gun;Lee, Myong-Hoon;Lee, Seung Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.18 no.11
    • /
    • pp.1028-1032
    • /
    • 2005
  • Liquid crystal (LC) alignment using a photoalignment method by irradiation of polarized ultraviolet (UV) on an alignment layer has been investigated. Photoalignment method exhibits weaker anchoring energy than rubbing method so that we have studied electro-optic characteristics of fringe-field switching (FFS) mode with alignment layers using the photo and rubbing alignment methods. The cell using photo alignment layer shows lower threshold and operation voltage than those using rubbed alignment layer. Also, the former method shows higher transmittance than that of the latter.

Design of Integrated a-Si:H Gate Driver Circuit with Low Noise for Mobile TFT-LCD

  • Lee, Yong-Hui;Park, Yong-Ju;Kwag, Jin-Oh;Kim, Hyung-Guel;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2007.08a
    • /
    • pp.822-824
    • /
    • 2007
  • This paper investigated a gate driver circuit with amorphous silicon for mobile TFT-LCD. In the conventional circuit, the fluctuation of the off-state voltage causes the fluctuation of gate line voltages in the panel and then image quality becomes worse. Newly designed gate driver circuit with dynamic switching inverter and carry out signal reduce the fluctuation of the off-state voltage because dynamic switching inverter is holding the off-state voltage and the delay of carry signal is reduced. The simulation results show that the proposed a-Si:H gate driver has low noise and high stability compared with the conventional one.

  • PDF

Design and fabrication of a Micromechanical Switch Using Polysilicon Surface Micromachining (다결정실리콘 표면 미세가공 기술을 이용한 초소형 기계식 스위치의 설계 및 제작)

  • Chae, Gyeong-Su;Han, Seung-O;Ha, Jong-Min;Mun, Seong-Uk;Park, Jeong-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.49 no.9
    • /
    • pp.546-551
    • /
    • 2000
  • A micromechanical switch that can be used as a logic gate is described in this paper. This switch consists of fixed input electrodes an output electrode Vcc/GND electrodes and movable plates suspended by crab-leg flexures. for mechanical switching of an electrical signal a parallel plate actuator which comes in contact with output electrode was used. Provided that movable plates are connected to Vcc and a low input voltage(ground signal) is applied to the fixed input electrodes the movable plates are pulled by an electrostatic force between the fixed input electrodes and the movable plates. the proposed micromechanical switch was fabricated by surface micromachining technology with$2\mum$ -thick poly-Si and the measured threshold voltage for ON/OFF switching was 23.5V.

  • PDF

Effect of Surface anchoring energy on the Electro-Optical Characteristics in the Fringe-Field Switching mode (FFS 모드에서 표면 앵커링 에너지에 따른 전기광학특성의 연구)

  • Yu, In-Ho;Zhong, Zhen-Xin;Jang, Won-Gun;Lee, Myong-Hoon;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.05a
    • /
    • pp.118-122
    • /
    • 2005
  • Liquid crystal (LC) alignment using a photoalignment method by irradiation of polarized ultraviolet (UV) on an alignment layer has been investigated. Photoalignment method exhibits weaker anchoring energy than rubbing method so that we have studied electro-optic characteristics of fringe-field switching (FFS) mode with alignment layers using the photo and rubbing alignment methods. The cell using photo alignment layer shows lower threshold and operation voltage than those using rubbed alignment layer. Also. the former method shows higher transmittance than that of the latter.

  • PDF

The saturating property of $Cr^{4+}:YAG$and dye film as the saturable absorber (포화흡수체 $Cr^{4+}:YAG$와 유기염료 박막의 포화특성 분석)

  • 최영수;전용근;김재기
    • Korean Journal of Optics and Photonics
    • /
    • v.12 no.2
    • /
    • pp.98-102
    • /
    • 2001
  • To analyze the saturating process of $Cr^{4+}:YAG$ crystal and plastic organic dye as the saturable absorber, we have measured the residual optical losses between a free running and a passive Q-switching mode for various optical densities. The undepleted ground state population density and the saturated transmission of the saturable absorber have been evaluated by the additional optical losses with the increased threshold pump energies between two resonators. ill the passive Q-switching mode, the saturable transmission of saturable absorber is less than the maxrnium saturable transmission due to the undepleted ground state population density. nsity.

  • PDF

A Novel Poly-Si TFT Pixel circuit for AMOLED to Compensate Threshold Voltage Variation of TFT at Low Voltage (저전압에서 다결정 실리콘 TFT의 불균일한 특성을 보상한 새로운 AMOLED 구동회로)

  • Kim, Na-Young;Yi, Moon-Suk
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.46 no.8
    • /
    • pp.1-5
    • /
    • 2009
  • A new pixel circuit for Active Matrix Organic Light Emitting Diodes (AMOLEDs), based on the polycrystalline silicon thin film transistors (Poly-Si TFTs), was proposed and verified by SMART SPICE simulation. One driving and six switching TFTs and one storage capacitor were used to improve display image uniformity without any additional control signal line. The proposed pixel circuit compensates an inevitable threshold voltage variation of Poly-Si TFTs and also compensates the degradation of OLED at low power supply voltage($V_{DD}$). The simulation results show that the proposed pixel circuit successfully compensates the variation of OLED driving current within 0.8% compared with 20% of the conventional pixel circuit.

A Voltage Programming AMOLED Pixel Circuit Compensating Threshold Voltage Variation of n-channel Poly-Si TFTs (n-채널 다결정 실리콘 박막 트랜지스터의 문턱전압 변동 보상을 위한 전압 기입 AMOLED 화소회로)

  • Chung, Hoon-Ju
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.8 no.2
    • /
    • pp.207-212
    • /
    • 2013
  • A novel pixel circuit that uses only n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS-TFTs) to compensate the threshold voltage variation of a OLED driving TFT is proposed. The proposed 6T1C pixel circuit consists of 5 switching TFTs, 1 OLED driving TFT and 1 capacitor. When the threshold voltage of driving TFT varies by ${\pm}0.33$ V, Smartspice simulation results show that the maximum error rate of OLED current is 7.05 % and the error rate of anode voltage of OLED is 0.07 % at Vdata = 5.75 V. Thus, the proposed 6T1C pixel circuit can realize uniform output current with high immunity to the threshold voltage variation of poly-Si TFT.

Design of Low Power Current Memory Circuit based on Voltage Scaling (Voltage Scaling 기반의 저전력 전류메모리 회로 설계)

  • Yeo, Sung-Dae;Kim, Jong-Un;Cho, Tae-Il;Cho, Seung-Il;Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.11 no.2
    • /
    • pp.159-164
    • /
    • 2016
  • A wireless communication system is required to be implemented with the low power circuits because it uses a battery having a limited energy. Therefore, the current mode circuit has been studied because it consumes constant power regardless of the frequency change. However, the clock-feedthrough problem is happened by leak of stored energy in memory operation. In this paper, we suggest the current memory circuit to minimize the clock-feedthrough problem and introduce a technique for ultra low power operation by inducing dynamic voltage scaling. The current memory circuit was designed with BSIM3 model of $0.35{\mu}m$ process and was operated in the near-threshold region. From the simulation result, the clock-feedthrough could be minimized when designing the memory MOS Width of $2{\mu}m$, the switch MOS Width of $0.3{\mu}m$ and dummy MOS Width of $13{\mu}m$ in 1MHz switching operation. The power consumption was calculated with $3.7{\mu}W$ at the supply voltage of 1.2 V, near-threshold voltage.