• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.80-86
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• 2009

In this paper, we present a new charge pump circuit feasible for the implementation with standard twin-well CMOS process technology. The proposed charge pump employs PMOS-switching dual charge-transfer paths and a simple two-phase clock. Since charge transfer switches are fully turned on during each half of clock cycle, they transfer charges completely from the present stage to the next stage without suffering threshold voltage drop. During one clock cycle, the pump transfers charges twice through two pumping paths which are operating alternately. The performance comparison by simulations and measurements demonstrates that the proposed charge pump exhibits the higher output voltage, the larger output current and a better power efficiency over the traditional twin-well charge pumps.

• The Transactions of the Korea Information Processing Society
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• v.7 no.4
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• pp.1211-1216
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• 2000

Asynchronous transfer mode (ATM) can be efficiently used to transport packet data services. The switching system will support voice and packet data services simultaneously from end to end applications. To guarantee quality of service (QoS) of the offered services, source rateot send packet data is needed to control the network overload condition. Most existing control algorithms are shown to provide the threshold-based feedback control technique. However, real-time voice calls can be dynamically connected and released during data services in the network. If the feedback control information delays, quality of the serviced voice can be degraded due to a time delay between source and destination in the high speed link. An adaptive algorithm based on the optimal least mean square error technique is presented for the predictive feedback control technique. The algorithm attempts to predict a future buffer size from weight (slope) adaptation of unknown functions, which are used fro feedback control. Simulation results are presented, which show the effectiveness of the algorithm.

• The Journal of the Korea Contents Association
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• v.10 no.4
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• pp.45-54
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• 2010

In this paper, we propose a quality interworking control system to enhance user's quality satisfaction in NGN environment by controling QoS parameters related with QoE in network layer when service user's QoE using variance multimedia service is poor. The proposed system gathers QoS parameter information in network layer through control packet such as RTCP, and evaluates QoE of multimedia service using these QoS parameter information. Comparing the evaluated QoE with the measured QoE in application layer, QCS judges quality degradation, deduces related QoS parameters and decides relative importance of each parameter when QoE is lower than threshold value. QCS generates QoS control values which is based on routing and switching policy in service quality control system(SCS) and forwards them to SCS. Through this proposed system, service and network providers can provide multimedia services of enhanced quality to service users taking account of service characteristic and network performance.

• Journal of Internet Computing and Services
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• v.3 no.3
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• pp.67-74
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• 2002

Asynchronous transfer mode (ATM) can be efficiently used to transport packet data services. The switching system will support voice and packet data services simultaneously from end to end applications. To guarantee quality of service (QoS) of the offered services, source rate to send packet data is needed to control the network overload condition. Most existing control algorithms are shown to provide the threshold-based feedback control technique. However, real-time voice calls can be dynamically connected and released during data services in the network. If the feedback control information delays, quality of the serviced voice can be degraded due to a time delay between source and destination in the high speed link, An adaptive algorithm based on the optimal least mean square error technique is presented for the predictive feedback control technique. The algorithm attempts to predict a future buffer size from weight (slope) adaptation of unknown functions, which are used for feedback control. Simulation results are presented, which show the effectiveness of the algorithm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.9
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• pp.1689-1696
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• 2017

In the process of obtaining and transmitting image, there is degradation of image due to various noise, and there have been many active studies ongoing to remove the noise added on the images. This thesis has proposed a switching filter processing by the types of noise in order to remove the complex noise added on images. When the center value of local mask is damaged by AWGN based on the noise judgment, the threshold value is applied on standard deviation of local mask to process by applying different weight of weighted mask, and if the image is damaged by the salt and pepper noise, the local mask is subdivided into 4 directions, and processed by applying cubic spine interpolation in the direction with the least slat and pepper noise. Also, in order to evaluate the performance of proposed filter algorithm, the study conducted comparison among the existing methods and proposed filter using PSNR.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.3
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• pp.25-31
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• 1977

Fe V spinels were prepared by sintering the well-ground stoichiometric mixtures of Fe O and V O at 1,10$0^{\circ}C$ under H -CO atmosphere. The activation energy for electrical conduction decreases with increasing amount of iron. The tendency of activation energy depending on the amount of iron contained clarifies that the electrical condction of the spinel is mainly due to electron hopping between Fe and Fe ions at B sites. In the experiment for negative resistance characteristics, the threshold voltage (Vth) for the samples is related to ambient temperature, thickness and raising rate of applied voltage. Vth decreases as temperature increases while Vth increases linearly with thickness and Vth increases linearly with the raising rate of applied voltage in semi-logarithmic scale. These results lead to a conclusion that current paths mainly formed by thermal breakdown are ascribed to the negative resistance phenomena. Applying this property, these vanadium iron spinels may be used for switching elements.

• Journal of IKEEE
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• v.21 no.1
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• pp.1-6
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• 2017

IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.

• Proceedings of the KOSOMBE Conference
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• v.1996 no.11
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• pp.192-196
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• 1996

[ $1.06/1.32{\mu}m$ ] dual-wavelength medical laser was developed and preliminary clinical comparisons at these two wavelengths were performed for dental application. We could develop a compact laser system 1) by lasing two wavelengths from the same Nd:YAG rod, and 2) by introducing high-voltage switching power supply modules. Experiment on gingiva of pig jaw showed higher thermal damage at $1.32{\mu}m$. Depending on particular procedures, each wavelength has its own advantages and disadvantages. For cutting, however, using conical tips rather than bare fibers provided better results with low threshold of cutting energy and less surrounding thermal damage. Appling light-absorbing dye on target area appeared to induce more damage during laser irradiation. However, histological studies showed no significant difference whether dye was applied or not.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.