• Journal of the Institute of Electronics Engineers of Korea SP
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• v.42 no.4 s.304
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• pp.31-38
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• 2005

In this paper, we propose the chromatic adaptation models (CAM) for the variations of the luminance levels. A chromatic adaptation model, CAM$\Delta$Y , is proposed according to the change of luminance level under the same illuminants. The proposed model is obtained by the transform the test colors of the high luminance into the corresponding colors of the low luminance. In the proposed model, the optimal coefficients are obtained from the corresponding colors data of the Breneman's experiments. In the experimental results, we confined that the chromaticity errors, $\Delta$u'v', between the predicted colors by the proposed model and the corresponding colors of the Breneman's experiments are 0.004 in u'v' chromaticity coordinates. The prediction performance of the proposed model is excellent because this error is the threshold value that two adjacent color patches can be distinguished. Additionally, we also propose equal-whiteness CCT curves (EWCs) by CAM$\Delta$Y according to the luminance levels of the surround viewing conditions. And the proposed EWCs can be used as the theoretical standard which determines the reference white of the color display devices.

• Journal of Sensor Science and Technology
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• v.4 no.4
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• pp.10-15
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• 1995

Organic thin film electroluminescent(EL) cells were fabricated. Their output characteristics and luminance versus voltage characteristics were measured with different work function metal electrodes. The EL structure was Indium-Tin-Oxide(ITO)/hole transport layer/emission layer(electron transport layer)/metal electrode. PMMA+TPD(0.5 wt%), MC homopolymer+TPD(0.005 wt%) and (MC/MMA) copolymer+TPD(0.005 wt%) were used as hole transport layer. Ca, Mg, Mg:Ag(10:l) and Al were used as metal electrode. I-V output showed exponential feature, and the threshold voltage of 5 volts and the luminance of over 700 $Cd/m^{2}$ at 10 volts were observed.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.41 no.4
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• pp.87-92
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• 2004

Digital halftoning is to quantize a grayscale image to binary image. The error diffusion halftoning generates high quality bilevel image. But that also has some defects such as warms effect, sharpening and etc. To reduce these defects, Kite proposed the modified threshold modulation that has a parameter to control sharpening. Nevertheless some degradation left near edges with large luminance change. In this paver, we propose a method to control the parameter in proportional to local edge magnitude. The results of computer simulation show more reductions of the sharpening in the halftone image. Especially there are great improvement of quality near edges with large luminance change.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1077-1080
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• 2009

In this paper, we propose a new method for measuring image sticking of an OLED display using a human visual test. We determined that the perceptual image sticking threshold is 2% of luminance difference at 200 nits and 1% at 100 nits, respectively. Color shift must also be considered when evaluating image sticking, as a ${\Delta}$(u', v') shift of just over 0.002 can be recognized regardless of background brightness. Perception of image sticking is affected by the background level, test pattern, and ambient illumination conditions. The evaluation standard must consider both luminance variation and color shift simultaneously.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.47-51
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• 2008

The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.

• Korean Journal of Materials Research
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• v.32 no.7
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• pp.320-325
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• 2022

Single OLED and tandem OLED was manufactured to analyze the electroluminescence characteristics of DC driving, AC driving, and full-wave rectification driving. The threshold voltage of OLED was the highest in DC driving, and the lowest in full-wave rectification driving due to an improvement of current injection characteristics. The luminance at a driving voltage lower than 10.5 V (8,534 cd/m²) of single OLED and 20 V (7,377 cd/m²) of a tandem OLED showed that the full-wave rectification drive is higher than that of DC drive. The luminous efficiency of OLED is higher in full-wave rectification driving than in DC driving at low voltage, but decrease at high voltage. The full-wave rectification power source may obtain higher current density, higher luminance, and higher current efficiency than the AC power source. In addition, it was confirmed that the characteristics of AC driving and full-wave rectification driving can be predicted from DC driving characteristics by comparing the measured values and calculated values of AC driving and full-wave rectification driving emission characteristics. From the above results, it can be seen that OLED lighting with improved electroluminescence characteristics compared to DC driving is possible using full-wave rectification driving and tandem OLED.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.52-59
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• 1998

The ZnS:Mn thin film electroluminescent(TFEL) devices fabricated by ALE system were investigated. Yellow-orange light emission was observed when the applied voltage exceeded 134 V and luminance increased sharply as the applied voltage increased. Luminance of 568 Cd/c $m^{2}$ was obtained under 1 KHz sinusoidal voltage wave application at the peak applied voltage of 230 V. The peak wavelength of the emissionwas 577 nm. The C-V, Q-V, $Q_{t}$ - $F_{p}$ , L- $Q_{cond}$, and V- $Q_{pol}$ have been measured under theapplication of the trapezoidal wave with its pulse width varying 0 to 75 .mu.sec. The phoshor and the insulator capacitance of the TFEL device under test were 24.3 nF/c $m^{2}$ and 9 nF/c $m^{2}$, respectively. It was observed that the threshold voltage changed from 137V to 100V as the pulse width varied from 0 to 75 .mu.sec. The L- $Q_{cond}$ characteristics showed that the light emission increased in proportion to the $Q_{cond}$. The luminance increased from 386 Cd/ $m^{2}$ to 607 Cd/ $m^{2}$ when the $Q^{+}$$_{cond}$ increased from 1.3 .mu.C/c $m^{2}$ to 2.3 .mu.C/c $m^{2}$. The V- $Q_{pol}$ characteristics showed that the V was inversely proportional to $Q_{pol}$./. th/ was inversely proportional to $Q_{pol}$./. pol/./.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.9-13
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• 2002

Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

• Journal of Information Display
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• v.4 no.2
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• Korean Journal of Materials Research
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• v.33 no.12
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• pp.511-516
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• 2023

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.