• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• The Journal of the Korea Contents Association
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• v.8 no.6
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• pp.151-158
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• 2008

Poor posture of the neck and head has long been recognized as a factor contributing to the onset and perpetuation of pain in the head and neck region. This study were to evaluate the change of the neck pressure pain threshold in long term computer users. To elucidate change of the neck pressure pain threshold in long term computer users, the effect of computer using time(3, 6, 9, 12 and 15 hours) on neck pressure pain threshold were studied in 20 subjects. Neck pressure pain threshold were recorded 3, 6, 9, 12 and 15 hours group, and evaluated by pressure algometry to Trapezius muscle, Sternocleidomastoidius muscle, Suboccipitalis muscle and Temporalis muscle. Neck pressure pain threshold was significantly larger in 15 hours group(p<.05). But relation between neck pressure pain threshold in male group and female group were not significant differences(p>.05).

• Journal of Korean Physical Therapy Science
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• v.2 no.2
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• pp.465-479
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• 1995

We randomly assigned 61 healthy subjects(male 14, female 47) to compare the experimental pain threshold and skin temperature between high mode TENS and burst mode TENS. In this study, 61 subjects were divided into three groups ; high mode TENS(n=20), burst mode TENS (n=20), and control group(n=21). Experimental pain thresholds and skin temperatures were measured before, immediately after cessation of stimulation, and at 30 minutes post stimulation. Stimulation was applied to the dorsal surface of the forearm(L14, LI10). Pain thresholds were measured by chronaxie meter. Skin temperature were measured by electrical digital thermometer. The results are as follows ; 1. There were no statistical difference in the pain threshold and skin temperature at before TENS stimulation among the three groups(p>0.05). 2. The pain threshold and skin temperature in burst mode TENS group was significantly higher and longer effect than that in high mode TENS group and control group(p<0.01). 3. The pain threshold in burst mode TENS group decreased to prestimulation levels by 30 minutes poststimulation. 4. The skin temperature in burst mode TENS group decreased to prestimulation levels by 20 minutes poststimulation. 5. The skin temperature was significantly difference among three group at immediately after, and at 30 minutes poststimulation and the skin temperature in burst mode TENS group was significantely higher than that in two groups(p<0.001). 6. The increasing rate of pain threshold in high mode TENS group after immediately cassation of stimulation was 24.3%(p<0.001). 7. The increasing rate of pain threshold in burst mode TENS group after immediately cessation of stimulation was 93.5% (p<0.001).

• Journal of Oral Medicine and Pain
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• v.20 no.1
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• pp.97-103
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• 1995

The purpose of this study was to evaluate the effect of experimenter gender on pain report as well as the sex differences in pain threshold and pain tolerance. Cold pressor test and pressure pain threshold (PPT) test were performed on forty dental students by both of a male and a female experimenter separately with 1 day interval. The obtained results were as follows : There were no differences in pain threshold and pain tolerance between males and females when they were examined by the same gender experimenter in the cold pressor test, but when they were examined by the opposite gender experimenter the pain threshold of males was significantly higher than females. When the pain threshold was measured by the same gender experimenter, using a algometer, there was no differences in PPT between males and females. However, when the same measurements were done by the opposite gender experimenter, the PPT of males was significantly higher than females at anterior temporalis and inferior masseter. For cold pressor test, females tended to report lower levels of pain threshold and pain tolerance to a male experimenter than a female, but the differences were not significant. Although both pain threshold and pain tolerance were increased when males were examined by a female experimenter in the cold pressor test, the statistical significance was found only in pain tolerance. When subjects were examined by the opposite gender experimenter in the PPT text, females reported significantly higher levels of pain at inferior masseter and males reported significantly lower levels of pain at anterior temporalis and inferior masseter.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2511-2516
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.397-407
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• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.05a
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• pp.481-482
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• 2022

In this paper, effect of random dopant fluctuation (RDF) of the top-transistor in a monolithic 3D inverter composed of MOSFET transistors is investigated with 3D TCAD simulation when the gate voltage of the bottom-transistor is changed. The sampling for investigating RDF effect was conducted through the kinetic monte carlo method, and the RDF effect on the threshold voltage variation in the top-transistor was investigated, and the electrical coupling between top-transistors and bottom-transistors was investigated.

• Journal of the Korean Association of Geographic Information Studies
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• v.8 no.2
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• pp.10-20
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• 2005

The change of stream creation has a very sensitive effect on runoff analysis model using the divergence characteristic of stream. Therefore, in this study, the threshold area of stream creation was examined the change characteristic of topographical parameters. The subject basin of the research was the upper basin of the Kumho water gage station which is located in the middle of the Kumho river. The 1:25,000 numerical geography which was constructed $10{\times}10m$ mesh was used. The range of investigation of topographical parameters are number of stream order, length, area, slope, basin relief, sinuosity ratio, drainage density and total stream length etc. It was found from the result of analysis that the threshold value of 1st order stream has a very big effect on topographical parameters of basin. It was found that the threshold area of stream creation was under $0.10km^2$, the parameters showed a big change but showed a very small change over $0.10km^2$.

• Journal of the Korean Academy of Clinical Electrophysiology
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• v.4 no.1
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• pp.63-83
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• 2006

This study conducted the following experiment to examine anesthetic effects of 500 kHz ultrasound with lidocaine. Clinical experiment was conducted to compare local anesthetic effects by ultrasound frequencies and drugs with 40 normal adults and it divided subjects into experimental group (I) applying only ultrasound, ointment group (II) applying only lidocaine, phonophoresis group of 1 MHz (III), phonophoresis group of 500 kHz lidocaine (IV) for pain threshold and nerve conduct experiments. Mechanical threshold was measured with von Frey monofilament, thermal pain threshold with halogen lamp and digital thermometer, action potential in median nerve with diagnostic electromyography before and after treatment, and at 30 min., 60 min., 90 min., and 120 min. after treatment. Results of this study can be summarized as follows. Topical anesthesia experiment showed that pain threshold of phonophoresis groups was significantly increased, but there were little differences in ultrasound frequency and drugs among phonophoresis groups. Conduction anesthesia experiment showed that phonophoresis group of 500 kHz using lidocaine had significant difference in pain threshold and sensory nerve conduction compared to ointment group and ultrasound group, but there was no great difference from other phonophresis groups and light nerve block effect was found. It was considered that application of 500 kHz ultrasound using lidocaine will be more effective in deep anesthesia or nerve block than 1 MHz ultrasound. However, researches considering various frequencies, intensities and application hours in low frequency areas including kHz ultrasound are needed to increase deep permeation of drugs.