• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.7 s.238
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• pp.998-1004
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• 2005

A nano-stereolithography (NSL) process has been developed for fabrication of 3D shell structures which can be applied to various nano/micro-fluidic devices. By the process, a complicated 3D shell structure on a scale of several microns can be fabricated using lamination of layers with a resolution of 150 nm in size, so it does not require the use of my sacrificial layer or any supporting structure. A layer was fabricated by means of solidifying liquid-state monomers using two-photon absorption (TPA) induced using a femtosecond laser processing. When the polymerization process is finished, unsolidified liquid state resins can be removed easily by dropping several droplets of ethanol fur developing the fabricated structure. Through this work, some 3D shell structures, which can be applied to various applications such as nano/micro-fluidic devices and MEMS system, were fabricated using the developed process.

• ETRI Journal
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• v.18 no.4
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• pp.315-338
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• 1997

We extend our previous theoretical analysis of electronic and optical properties of p-type quantum well structures based on the two heavy- and light-hole system to include all the three valence bands. These theories are then used to clarify the origin of the normal incidence absorption and photo current at photon wavelengths of 2 - 3 ${\mu}m$, which was observed in addition to the absorption around 8 ${\mu}m$ by a recent experimental investigation with heavily doped p-type GaAs/AlGaAs multi-quantum well (MQW) structures. In the theoretical analysis, the Hartree and exchange-correlation many-body interactions are taken into account within one-particle local density approximation, and it is shown that normal incidence absorption occurs in two wavelength regions over the transition energy range higher than barrier height for p-type GaAs/AlGaAs superlattices with well doping of $2{\times}10^{19}\;cm^{-3}$; one region has broad absorption peaks with coefficients of about 5000 $cm^{-1}$ around 8 ${\mu}m$, and the other has two rather sharp peaks at 2.7 ${\mu}m$ and 3.4 ${\mu}m$ with 1800 $cm^{-1}$ and 1300 $cm^{-1}$, respectively. The result indicates that the theory explains the experimental observation well, as the theoretical and experimental results are in close agreement in general absorption features.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.45-49
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• 2006

A nano-stereolithography (NSL) process has been developed for the fabrication of three-dimensional (3D) micro-devices with high spatital resolution of approximately 100 nm. In the NSL process, a complicated 3D structure can be created by stacking layer-by-layer, so it does not require any sacrificial layer or any supporting structure. A laminated layer was fabricated by means of solidifying liquid-state monomers using two-photon absorption (TPA) which was induced by a femtosecond laser. When the fabrication of a 3D stacked structure was finished, unsolidified liquid resins were rinsed by ethanol to develop the fabricated structures; then, the polymerized structure was only left on the glass substrate. Through this work, several 3D microstructures such as a micro-channel, shell structures, and photonic crystals were fabricated to evaluate the possibility of the developed system.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.2005-2012
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• 2019

This work investigated the radiation attenuation characteristics of three series of tellurite glass systems with the following compositions: 30PbO-10ZnO-xTeO₂-(60-x)B₂O₃ where x = 10, 30, 40, 50 and 60 mol%, xBaO-xB₂O₃-(100-2x)TeO₂ with x = 15-40 mol% and 50ZnO-(50-x)P₂O₅-xTeO₂, where x = 0, 10, .40 mol%. The results revealed that the attenuation parameters in all the samples decrease with increase in the energy, which implied that all the samples have better interaction with gamma photons at low energies and thus higher photon attenuating efficiency. From the three systems, the samples coded as PbZnBTe60, BaBTe70 and ZnPTe40 have the lowest half value layer values and accordingly have superior photon attenuation efficacy. The maximum effective atomic number values were found for energy less than 0.1 MeV particularly near the K-edges absorption of the heavy atomic number elements such as Te, Ba and Pb. At the lowest energy, the Z_eff values are found in the range of 62.33-66.25, 49.43-50.81 and 24.99-35.83 for series 1-3 respectively. Also, we found that the density of the glass remarkably affects the photon attenuation ability of the selected glasses. The mean free path results showed that the PbO-ZnO-TeO₂-B₂O₃ glass system has better radiation shielding efficiency than the glass samples in series 2 and 3.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.102-110
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• 1999

The LIGA X-ray exposure step was modelled into three inequalities, by assuming that the X-ray energy attenuated within a resist is deposited only in the localized range of the resist. From these inequalities, equations for the minimum and maximum exposure times required for a good quality microstructure were obtained. Also, an equation for the thickness of an X-ray mask absorber was obtained from the exposure requirement of threshold dose deposition. The calculation method of the synchrotron radiation power from a synchrotron radiation source was introduced and applied to an X-ray exposure step. A power from a synchrotron radiation source was introduced and applied to an X-ray exposure step/ A power function of photon energy, approximating the attenuation length of the representative LIGA resist, PMMA, and the mean photon energy of the XZ-rays incident upon an X-ray mask absorber were applied to the above mentioned equations. Consequently, the tendencies of the minimum and maximum exposure and with respect to mean photon energy and thick ness of PMMA was obtained. Additionally, the tendencies of the necessary thickness of PMMA and photon energy of the X-ray mask absorber with respect to thickness of PMMA and photon energy of the X-rays incident upon an X-ray mask absorber were examined. The minimum exposure time increases monotonically with increasing mean photon energy for the same total power density and is not a function of the thickness of resist. The minimum exposure time increases with increasing mean photon energy for the same total power density in the case of the general LIGA process, where the thickness of PMMA is thinner than the attenuation length of PMMA. Additionally, the minimum exposure time increases monotonically with increasing thickness of PMMA. The maximally exposable thickness of resist is proportional to the attenuation length of the resist at the mean photon energy with its proportional constant of ln $(Dd_m/D_{dv})$. The necessary thickness of a gold X-ray mask absorber due to absorption edges of gold, increases smoothly with increasing PMMA thickness ratio, and is independent of the total power density itself. The simplicity of the derived equations has made clearly understandable the X-ray exposure phenomenon and the correlation among the exposure times, the attenuation coefficient and the thickness of an X-ray mask absorber, the attenuation coefficient and the thickness of the resist, and the synchrotron radiation power density.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1213-1218
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• 2004

The present article reports extensive numerical results on the non-local characteristics of ultra-short pulsed laser-induced breakdowns of fused silica ($SiO_{2}$) by using the multivariate Fokker-Planck equation. The nonlocal type of multivariate Fokker-Planck equation is modeled on the basis of the Boltzmann transport formalism to describe the ultra-short pulsed laser-induced damage phenomena in the energy-position space, together with avalanche ionization, three-body recombination, and multiphoton ionization. Effects of electron avalanche, recombination, and multiphoton ionization on the electronic transport are examined. From the results, it is observed that the recombination becomes prominent and contributes to reduce substantially the rate of increase in electron number density when the electron density exceeds a certain threshold. With very intense laser irradiation, a strong absorption of laser energy takes place and an initially transparent solid is converted to a metallic state, well known as laser-induced breakdown. It is also found that full ionization is provided at intensities above threshold, all further laser energy is deposited within a thin skin depth.

• Journal of Microbiology and Biotechnology
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• v.30 no.5
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• pp.633-641
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• 2020

Microbial rhodopsins are a superfamily of photoactive membrane proteins with the covalently bound retinal cofactor. Isomerization of the retinal chromophore upon absorption of a photon triggers conformational changes of the protein to function as ion pumps or sensors. After the discovery of proteorhodopsin in an uncultivated γ-proteobacterium, light-activated proton pumps have been widely detected among marine bacteria and, together with chlorophyll-based photosynthesis, are considered as an important axis responsible for primary production in the biosphere. Rhodopsins and related proteins show a high level of phylogenetic diversity; we focus on a specific class of bacterial rhodopsins containing the '3 omega motif.' This motif forms a stack of three non-consecutive aromatic amino acids that correlates with the B-C loop orientation and is shared among the phylogenetically close ion pumps such as the NDQ motif-containing sodium-pumping rhodopsin, the NTQ motif-containing chloride-pumping rhodopsin, and some proton-pumping rhodopsins including xanthorhodopsin. Here, we reviewed the recent research progress on these 'omega rhodopsins,' and speculated on their evolutionary origin of functional diversity.

• Journal of Bio-Environment Control
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• v.20 no.3
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• pp.189-196
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• 2011

The objective of this study was to investigate the effects of light intensity and electrical conductivity (EC) of nutrient solution during short day treatment in an ebb and flow systems on the growth and nutrient uptake of potted Kalanchoe blossfeldiana 'Rako' and the nutrient accumulation of growing medium. Nutrient concentrations in the growing medium were also analyzed to investigate the accumulation rates of macro-nutrients such as T-N, P, K, Ca, and Mg, respectively. To achieve the objectives, plants were fed with a nutrient solution with 1.2, 1.8, or $2.4dS{\cdot}m^{-1}$ under three daily photosynthetic photon flux (PPF) of 4.26, 5.51, or $9.75mol{\cdot}m^{-2}{\cdot}d^{-1}$. Both light intensity and EC of nutrient solution significantly influenced the crop growth. The elevation of PPFs resulted in the increase of plant growth. For each light condition, plant growth, such as dry and fresh weight and leaf area, was the highest when the electrical conductivity of nutrient solution was controlled to $2.4dS{\cdot}m^{-1}$. However, growth was acceptable in the EC ranges from 1.8 to $2.4dS{\cdot}m^{-1}$. Both light intensity and EC of nutrient solution significantly influenced the uptake of nutrients in the solution tanks and the accumulation of nutrients in the growing medium. As the EC of nutrient solution was elevated, the absorption rates of $NO_3^-$, $PO_4^{-3}$, $K^+$, and $Mg^{2+}$ by crops and accumulation of those in growing medium increased, but the light intensity did not significantly influence the absorption rates. Based on the above results, the regression models were suggested for anticipating the macro-nutrient accumulations in growing medium.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.76-85
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• 1998

Organic single crystal of p-toluene sulfonate(PTS) bulks and thin films were fabricated using a slow solution evaporation method. Third and fifth order nonlinear refractive indices, $n_2$and $n_3$, of PTS crystals at 1600 nm were determined by the Z-scan method and the multimode output of the PTS thin film waveguide was observed at 1350 nm. When the beam intensity is in 2-5 GW/$cm^2$, the nonlinear refractive indices are $n_{2}=6{\times}10^{-4}cm^{2}$/GW and $n_{3}=-7{\times}10^{-5}cm^{4}/GW^{2}$ and the two and three photon absorption coefficients are zero. When the beam intensity is in 5~16 GW/$cm^2$, the split-step fast Fourier transform beam propagation method simulation shows that the beam propagation in the PTS is distorted from the gaussian shape.