• Journal of the Optical Society of Korea
• /
• 제11권2호
• /
• pp.67-70
• /
• 2007

A Wide Color Gamut Backlight system was studied using a three-band white Light-Emitting Diode. A three-band white light-emitting diode (LED) was fabricated using an InGaN-based blue LED chip that emits 445-nm blue peak, and a green phosphor and red phosphor that emit 535-nm green and 621-nm red peak emissions, respectively, when excited by 450-nm blue light. Using for this three-band white LED, wide color gamut backlight unit (BLU) was attained. The luminance of BLU and CIE 1931 chromaticity coordinates was $1,700Cd/m^2$ and (0.337, 0.346). Color filter matching simulations for this configuration show that the three-band white LED backlight can be enhanced by up to 16% over conventional white LED backlight color gamut.

• Bulletin of the Korean Chemical Society
• /
• 제28권8호
• /
• pp.1280-1284
• /
• 2007

A series of Ca1-xSrxS:Eu (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) phosphors were synthesized by solid-state reactions. The Ca1-xSrxS:Eu phosphors have a strong absorption at 455 nm, which corresponds to the emission wavelength of a blue LED. The emission peak of Ca1-xSrxS:Eu is blue shifted from 655 to 618 nm with increasing Sr content. The characteristics of Ca1-xSrxS:Eu phosphors make them suitable for use as wavelengthtunable red-emitting phosphors for three-band white LEDs pumped by a blue LED. In support of this, we fabricated a three-band white LED by coating SrGa2S4:Eu and Ca0.6Sr0.4S:Eu phosphors onto a blue LED chip, and characterized its optical properties.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1100-1102
• /
• 2006

A three-band white LED was fabricated by combining a blue LED with SrGa2S4:Eu (green) and CaS:Eu (red) phosphors for improving the color gamut, which is favorable to full color image.

• Bulletin of the Korean Chemical Society
• /
• 제32권6호
• /
• pp.2087-2090
• /
• 2011

• Bulletin of the Korean Chemical Society
• /
• 제25권10호
• /
• pp.1585-1588
• /
• 2004

• Bulletin of the Korean Chemical Society
• /
• 제31권10호
• /
• pp.2992-2994
• /
• 2010

• Bulletin of the Korean Chemical Society
• /
• 제33권8호
• /
• pp.2523-2528
• /
• 2012

Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

• 한국세라믹학회지
• /
• 제43권5호
• /
• pp.304-308
• /
• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• 한국세라믹학회지
• /
• 제40권12호
• /
• pp.1170-1176
• /
• 2003

진화최적방법을 이용하여 alkali earth borosilicate 계열(Eu, Mg, Ca, Sr, Ba)$_{x}$ $B_{y}$S $i_{z}$ $O_{d}$에 E $u^{3+}$ 를 도핑 하여 고효율 적색 형광체를 합성하였다. 본 연구는 삼원색 백색 LED로의 적용을 목적으로 한다. 진화최적방법은 유전알고리즘과 조합화학을 연계하여, LED형광체 개발을 위해 개발하였다. 유전알고리즘을 조합화학에 접목함으로써 시간과 자원의 낭비 없이 매우 효율적인 형광체 탐색을 꾀할 수 있었다. 실질적인 실험에 앞서 다양한 목적함수를 이용하여 시뮬레이션을 실시하여 본 연구의 타당성을 증명하고 실제 합성한 결과 삼원색 백색 LED용 적색형광체(E $u_{0.14}$M $g_{0.18}$C $a_{0.07}$B $a_{0.12}$ $B_{0.17}$S $i_{0.32}$ $O_{{\delta}}$)를 얻었다.얻었다.다.얻었다.얻었다.다.

• 한국결정성장학회지
• /
• 제17권5호
• /
• pp.204-209
• /
• 2007

형광체-변환 3파장 백색 발광 다이오드(LED)의 응용을 위하여 일련의 $CaS_{1-x}Se_x:Eu$ 형광체를 합성하였다. $CaS_{1-x}Se_x:Eu$의 구조와 발광 특성을 조사하였다. $CaS_{1-x}Se_x:Eu$ 형광체는 청색 발광 다이오드의 발광 파장인 455nm에서 강한 흡수가 있다. $Eu^{2+}$의 $4f^65d^1(T_{2g}){\rightarrow}4f^7(^8S_{7/2})$ 전이 때문에 CaS:Eu는 651nm에서 적색 발광 봉우리를 가지고 있다. $CaS_{1-x}Se_x:Eu$의 발광 봉우리는 Se이 증가함에 따라서 651nm에서 598nm으로 이동이 된다. $CaS_{1-x}Se_x:Eu$ 형광체는 청색 LED로 여기하면 가변 파장의 적색 발광을 하는 형광체로 사용될 수 있다. $SrGa_2S_4:Eu$와 $CaS_{0.50}Se_{0.50}:Eu$ 형광체를 청색 발광 다이오드에 도포하여 백색 발광 다이오드를 제작하였다.