• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1673-1675
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• 2006

As the manufacturing capacity needs for large size LCD TV shifts very fast into next generation, processing and test equipment makers face more difficult challenges in accommodating productivity, reliability and lead time of panel makers as well as the prerequisite of high process quality. In this paper, AKT will discuss its new innovative productivity solutions in PECVD (Plasma Enhanced Chemical Vapor Deposition), as the key thin film process system, and EBT (Electron Beam Test), as the key array test system, for the huge glass size with surface dimension larger than 2 meter by 2 meter.

• 한국기계가공학회지
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• 제12권4호
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• pp.10-15
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• 2013

In order to fabricate high sensitive and stable biosensors, we require the material with superior biocompatibility and physical-chemical stability. Many kinds of biomaterials have been evaluated to apply for bioindustry. Recently, carbon based diamond thin films have been focal pointed as bio-applications and their possibility has been evaluated. Diamond thin film has many advantages for electrochemical and biological applications, such as wide potential window (3.0-3.5V), low background current and chemical-physical stability. In this work, we have cultured neuroblastoma cell (SH-SY5Y) on the crystalline diamond films. We use MTT assay to evaluate the characteristic of cell culture on the substrates. As a result, neuroblastoma cell was cultured on the crystalline diamond film as similar as cell culture dish.

• International Journal of Precision Engineering and Manufacturing
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• 제7권4호
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• pp.14-17
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• 2006

A thin GaN semiconducting film that grows on sapphires due to metalorganic chemical vapor deposition was machined for nanophotonic applications. The thin film had multilayered superlattice structures, including nanoscaled InGaN layers. Eight alternating InGaN/GaN multilayers provided a blue light emission source. Nanoscaled holes, 150 nm in diameter, were patterned on polymethylmethacrylate (PMMA) film using an electron beam lithography system. The PMMA film blocked the etching species. Air holes, 75 nm in diameter, which acted as blue light diffraction sources, were etched on the top GaN layer by an inductively coupled plasma etcher. Hexagonal lattice photonic crystals were fabricated with 230-, 460-, 690-, and 920-nm pitches. The 450-nm wavelength blue light provided the nanodiffraction destructive and constructive interferences phenomena, which were dependent on the pitch of the holes.

• Design & Manufacturing
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• 제18권2호
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• pp.1-8
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• 2024

Unlike the roll-to-roll process that uses a steel roll and a nip roll, a vacuum roll can hold and transfer a thin film using a single roll. To precisely manufacture a vacuum roll, a thin outer cylinder must be machined, which is assembled on the outside of the roll and contacts the film via vacuum pressure. In this study, the effects of jaw width and chucking force on the deformation of the outer cylinder during the turning process were investigated using analysis, and a precision machining and burr removal process was developed. The deformation of the outer cylinder decreased almost linearly with increasing jaw width and increased with higher chucking force and larger cylinder diameter. Additionally, the deflection due to the weight of the outer cylinder was approximately three times greater than that caused by film tension. For the machined outer cylinder, a burr removal experiment was conducted, and concentricity and cylindricity were measured. Using a device that removes burrs by rotating a wheel connected to the main shaft at high speed, it was found that burrs generated on the inner diameter could be removed very efficiently. On the vacuum side, the concentricity errors of the inner and outer diameters were 0.015 mm and 0.014 mm, respectively, and on the opposite side, they were 0.006 mm and 0.010 mm, respectively. Additionally, the measurement of Total Indicator Runout (TIR) according to the angle showed that the maximum cylindricity of the outer and inner diameters was 0.02 mm and 0.025 mm, respectively. Finally, through burr-height measurement at the hole boundary, it was found that the heights were within 0.05 mm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.223-224
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• 2005

In this paper, multiple regression analysis of the electrical characteristics for $HfO_2$ thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as, the accumulation capacitance and the hysteresis index, are the main factors to determine the characteristics of $HfO_2$ thin films. The input factors on the process are the substrate temperature, Ar gas flow, and $O_2$ gas flow. For statistical analysis, the design of experiments was carried out and the effect plots were used to analyze the manufacturing process. This methodology can predict the electrical characteristics of the thin film growth mechanism related to the process conditions.

• Korea-Australia Rheology Journal
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• 제15권4호
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• pp.167-171
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• 2003

The backlight unit (BLU) is used as a light source of TFT liquid-crystalline-display (TFT-LCD) module. In this backlight unit, one of important components is the light guide, which is usually made of transparent polymers. Currently, the screen-printing method is mainly used for the light guide as a manufacturing process. However, it has limitation to the flexibility of three-dimensional optical design. In the present paper a new alternative manufacturing method for the light guide with low-cost is proposed. This manufacturing method is named as direct surface forming (DSF), which is very similar to the well-known hot embossing except for partial contact between mold and substrate. The results of this new manufacturing method are presented in terms of processing condition, dimensional accuracy, productivity, etc.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• 한국산학기술학회논문지
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• 제12권5호
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• pp.2038-2047
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• 2011

본 논문에서는 TFT-LCD(Thin Film Transistor-Liquid Crystal Display) 제조 공정 중 Module 공정의 Slim MES(Manufacturing Execution System)를 위한 생산계획 프레임워크(framework)개발에 관해 연구한다. TFT-LCD 제조 공정 중 Module 공정의 라인 구성 및 기능은 각 제조 현장마다 차이가 있다. 본 논문은 이러한 차이를 반영하는 제조현장 맞춤형 MES를 위한 생산계획 프레임워크를 제시한다. 먼저 TFT-LCD Module 공정의 분석을 통해 생산계획 프로세스를 파악한다. 그런 다음 현장 상황 제약조건을 반영한 수리적 모델링을 제시하고 이에 대한 최적 스케줄의 도출을 사례를 통해 제시한다. 또한 현장 상황을 반영한 디스패칭(dispatching) 룰에 의한 스케줄 생성 과정을 제시하고 성능실험 결과를 제시한다. 마지막으로 Slim MES를 위한 생산계획 프레임워크 설계 과정을 제시한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.529-529
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• 2006

Several laboratories worldwide have demonstrated the feasibility of producing amorphous silicon thin film transistor (TFT) arrays at temperatures that are sufficiently low to be compatible with flexible foils such as stainless steel or high temperature polyester. These arrays can be used to fabricate flexible high information content display prototypes using a variety of different display technologies. However, several questions must be addressed before this technology can be used for the economic commercial production of displays. These include process optimization and scale-up to address intrinsic electrical instabilities exhibited by these kinds of transistor device, and the development of appropriate techniques for the handling of flexible substrate materials with large coefficients of thermal expansion. The Flexible Display Center at Arizona State University was established in 2004 as a collaboration among industry, a number of Universities, and US Government research laboratories to focus on these issues. The goal of the FDC is to investigate the manufacturing of flexible TFT technology in order to accelerate the commercialization of flexible displays. This presentation will give a brief outline of the FDC's organization and capabilities, and review the status of efforts to fabricate amorphous silicon TFT arrays on flexible foils using a low temperature process. Together with industrial partners, these arrays are being integrated with cholesteric liquid crystal panels, electrophoretic inks, or organic electroluminescent devices to make flexible display prototypes. In addition to an overview of device stability issues, the presentation will include a discussion of challenges peculiar to the use of flexible substrates. A technique has been developed for temporarily bonding flexible substrates to rigid carrier plates so that they may be processed using conventional flat panel display manufacturing equipment. In addition, custom photolithographic equipment has been developed which permits the dynamic compensation of substrate distortions which accumulate at various process steps.

• 한국융합학회논문지
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• 제11권10호
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• pp.1-7
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• 2020

뉴로모픽 소자 초기 단계인 저항 변화형 메모리 소자의 제작 공정으로, 진공 공정의 연속성을 유지하였고, 고집적, 고신뢰성을 보장하는 뉴로모픽 컴퓨팅을 위한 저항 변화 메모리 소자 제작 및 공정 기술에 적합한 플라즈마 모듈을 적용하였다. 플라즈마 모듈을 적용한 저항메모리(ReRAM) 소자의 제작과 연구는 ReRAM 소자 기반의 TiO₂/TiOx 산화물박막의 제작방법과 소재의 변화를 통한 다양한 실험을 통하여 완성되었다. XRD를 이용하여 rutile결정을 측정하였고, 반도체 파라미터 측정기로 저항 메모리의 HRS : LRS 비율이 2.99 × 10³ 이상이고, 구동 전압 측정이 0.3 V이하에서 구동이 가능한 저항 변화형 메모리 소자의 제작을 확인 하였다. 산소 플라즈마 모듈을 적용한 뉴로모픽 저항메모리 제작과 TiOx 박막을 증착하여 성능을 확인하였다.