• 제목/요약/키워드: Thin-film manufacturing process

검색결과 171건 처리시간 0.025초

New SMOLED Deposition System for Mass Production

  • Lee, J.H.;Kim, C.W.;Choi, D.K.;Kim, D.S.;Bae, K.B.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.407-410
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    • 2003
  • We will introduce our new concept deposition system for SMOLED manufacturing in this conference. This system is designed to deposit organic and metal material to downward to overcome the limit of substrate size and process tact time hurdle for OLED mass production, and is organized with organic deposition chamber, substrate pre-cleaning chamber, metal deposition chamber and encapsulation system. These entire process chambers are integrated with linear type substrate transfer system. We also compare our new SMOLED manufacturing system with conventional vacuum deposition systems, and show basic organic thin film property data, organic material deposition property data, and basic device property.

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박막증착조건 변화에 따른 $CuInSe_2$ 박막의 특성에 관한 연구 (Characterization of $CuInSe_2$ thin film depending on deposition parameters)

  • 김영준;양현훈;소순열;정운조;박계춘;이진;정해덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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    • pp.119-122
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    • 2006
  • Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the surface temperature having an effect on the quality of the thin film was changed from 100[$^{\circ}C$] to 300[$^{\circ}C$] at intervals of 50[$^{\circ}C$].

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Self-patterning 기술을 이용한 강유전체 메모리 전극용La0.5Sr0.5CoO3박막의 제조에 관한 연구 (A Study on Fabrication of La0.5Sr0.5CoO3Thin Films as an Electrode for Ferroelectric Memory by Self-patterning Technique)

  • 손현수;김병호
    • 한국세라믹학회지
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    • 제40권2호
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    • pp.153-158
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    • 2003
  • Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 강유전성 메모리소자의 산화물 전극재료로 사용되고 있는 La$_{0.5}$Sr$_{0.5}$CoO$_3$(LSCO)극 photosensitive sol solution을 이용하여 spin coating법으로 제조하였으며 출발원료는 La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide를 사용하였다. LSCO gel 박막에 UV 노광시간을 증가시킴에 따라 M(metal)-O-M 결합이 생성되면서 metal $\beta$-diketonate의 UV 흡수 피크 강도는 감소되었고 LSCO gel 박막에 UV조사에 따른 용해도 차이가 생기면서 fine patterning 을 얻을 수 있었다. 68$0^{\circ}C$ 이상의 온도로 대기 중에서 열처리된 LSCO 박막은 perovskite 상을 나타내었고 74$0^{\circ}C$에서 가장 낮은 비저항값(4$\times$10 ̄$^3$Ωcm)을 얻을 수 있었다.

Direct Current (DC) Bias Stress Characteristics of a Bottom-Gate Thin-Film Transistor with an Amorphous/Microcrystalline Si Double Layer

  • Jeong, Tae-Hoon;Kim, Si-Joon;Kim, Hyun-Jae
    • Transactions on Electrical and Electronic Materials
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    • 제12권5호
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    • pp.197-199
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    • 2011
  • In this paper, the bottom-gate thin-film transistors (TFTs) were fabricated with an amorphous/microcrystalline Si double layer (DL) as an active layer and the variations of the electrical characteristics were investigated according to the DC bias stresses. Since the fabrication process of DL TFTs was identical to that of the conventional amorphous Si (a-Si) TFTs, it creates no additional manufacturing cost. Moreover, the amorphous/microcrystalline Si DL could possibly improve stability and mass production efficiency. Although the field effect mobility of the typical DL TFTs is similar to that of a-Si TFTs, the DL TFTs had a higher reliability with respect to the direct current (DC) bias stresses.

박막 자심 인덕터의 제조와 특성 (Fabrication and Properties of Thin-Film Inductors with Magnetic Core)

  • 김현식;민복기;변우봉;김기욱;송재성;오영우
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1314-1316
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    • 1997
  • In this study, We fabricated thin film magnetic core inductors by using thin film manufacturing techniques such as photolithography and wet etching process. The inductors were prepared using multi-layered CoNbZr/Cu/CoNbZr. These devices are measured at high frequency range of $1\;MHz{\sim}1\;GHz$.

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윤활마찰시에 윤활피막 혹은 산화막이 초기 마찰특성에 미치는 영향 (The Effect of the Preformed Oil or Oxide Film on the Lubricated Sliding Surfaces.)

  • 강석춘
    • Tribology and Lubricants
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    • 제2권1호
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    • pp.53-60
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    • 1986
  • The methods to prevent or suppress the initial failure of the sliding surfaces by the formation of the protection film during the manufacturing process were studied. Now it has been known that the surface protection film which was formed during the running-in process is mainly $Fe_3O_4$ and its film was formed only at the limited oxygen ability during the lubricated sliding. So it was tried to form the same oxide film before the sliding by heat treatment at 300$\circ$C with the wetted specimen by oil. The results show that a thin oxide film ($Fe_3O_4$) was formed on the surface beneath the solid oil film and the specimen with this film has much better friction properties than those prepared with heat treatment at 500$\circ$C and 700$\circ$C or the original one.

용액 공정을 이용한 IZO 트랜지스터의 전기적 성능에 대한 박막 두께의 영향 (Effect of Thin-Film Thickness on Electrical Performance of Indium-Zinc-Oxide Transistors Fabricated by Solution Process)

  • 김한상;경동구;김성진
    • 한국전기전자재료학회논문지
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    • 제30권8호
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    • pp.469-473
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    • 2017
  • We investigated the effect of different thin-film thicknesses (25, 30, and 40 nm) on the electrical performance of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). The structural properties of the IZO thin films were investigated by atomic force microscopy (AFM). AFM images revealed that the IZO thin films with thicknesses of 25 and 40 nm exhibit an uneven distribution of grains, which deforms the thin film and degrades the performance of the IZO TFT. Further, the IZO thin film with a thickness of 30 nm exhibits a homogeneous and smooth surface with a low RMS roughness of 1.88 nm. The IZO TFTs with the 30-nm-thick IZO film exhibit excellent results, with a field-effect mobility of $3.0({\pm}0.2)cm^2/Vs$, high Ion/Ioff ratio of $1.1{\times}10^7$, threshold voltage of $0.4({\pm}0.1)V$, and subthreshold swing of $0.7({\pm}0.01)V/dec$. The optimization of oxide semiconductor thickness through analysis of the surface morphologies can thus contribute to the development of oxide TFT manufacturing technology.

바이어스 스퍼터링 법으로 제조된 LiCoO2박막 I. 전기화학적 특성 ([ LiCoO2 ] Thin Film Deposited by Bias Sputtering Method I. Electrochemical Characteristics)

  • 이영재;박호영;조병원;조원일;김광범
    • 전기화학회지
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    • 제6권4호
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    • pp.261-265
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    • 2003
  • 박막전지의 제조공정 중 열처리 공정은 많은 문제점들을 가지고 있다. 본 연구에서는 열처리 공정 없이 박막의 구조변화를 유발하는 바이어스 스퍼터링(Bias sputtering) 방법으로 $LiCoO_2$ 양극 활물질 박막을 제조하여 그 특성을 고찰하였다. 제조된 박막은 다양한 분석 방법을 이용하여 결정구조, 표면형상, 방전용량을 관찰하였다, 제조된 $LiCoO_2$양극활물질 박막 중 -50 V의 기판 바이어스 전압$(substrate\;bias\;voltage:\;V_b)$을 인가하여 제조된 $LiCoO_2$ 양극 활물질 박막에서 약 $60{\mu}Ah/cm^2{\mu}m.$의 초기 방전 용량을 가짐을 확인하였다. 본 연구는 열처리 공정 없이도 박막전지의 양극활물질로서 $LiCoO_2$ 박막을 사용할 수 있음을 알 수 있었다.

연속공정기반 저온 상압 원자층 증착 시스템을 이용한 유무기 멀티레이어 배리어 박막에 관한 연구 (A Study on the Organic-Inorganic Multilayer Barrier Thin Films Using R2R Low-Temperature Atmospheric-Pressure Atomic Layer Deposition System)

  • 이재욱;김현범;최경현
    • 한국기계가공학회지
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    • 제17권3호
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    • pp.51-58
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    • 2018
  • In this paper, the organic material Poly(methyl methacrylate) PMMA is used with inorganic $Al_2O_3$ to fabricate organic-inorganic multilayer barrier thin films. The organic thin films are developed using a roll-to-roll electrohydrodynamic atomization system, whereas the inorganic are grown using a roll-to-roll low-temperature atmospheric pressure atomic layer deposition system. For the first time, these two technologies are used together to develop organic-inorganic multilayer barrier thin films in atmospheric condition. The films are grown under optimized parameters and classified into three classes based on the layer structures, when the total thickness of the barrier is maintained at ~ 160 nm. All classes of barriers show good morphological, optical and chemical properties. The $Al_2O_3$ films with a low average arithmetic roughness of 1.58 nm conceal the non-uniformity and irregularities in PMMA thin films with a roughness of 5.20 nm. All classes of barriers show a notably good optical transmission of ~ 85 %. The hybrid organic-inorganic barriers show water vapor and oxygen permeation in the range of ${\sim}3.2{\times}10^{-2}g/m^2/day$ and $0.015cc/m^2/day$ at $23^{\circ}C$ and 100% relative humidity. It has been confirmed that it can be mass-produced and used as a low-cost barrier thin film in various printing electronic devices.

What Is the Key Vacuum Technology for OLED Manufacturing Process?

  • 백충렬
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.95-95
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    • 2014
  • An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

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