• Progress in Superconductivity
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• v.13 no.2
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• pp.127-132
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• 2011

Many research groups have been manufacturing coated conductor by various processes such as PLD, MOD, and MOCVD, but the methods with production cost suitable for wide and massive application of coated conductor did not develop yet. Spray pyrolysis method adopting ultrasonic atomization was tried as one of the possible option. GdBCO precursor films have been deposited on IBAD substrate by spray pyrolysis method at low temperature and converted to GdBCO by post heat treatment. Ultrasonic atomization was used to generate fine droplets from precursor solution of Gd, Ba, and Cu nitrate dissolved in water. Primary GdBCO films were deposited at $500^{\circ}C$ and oxygen partial pressure of 1 torr. After that, the films were converted at various temperatures and low oxygen partial pressures. C-Axis oriented films were obtained IBAD substrates at conversion temperature of around $870^{\circ}C$ and oxygen partial pressures of 500 mtorr ~ 1 torr in a vacuum. Thick c-axis epitaxial film with the thickness of 0.4 ~ 0.5 ${\mu}m$ was obtained on IBAD substrate. C-axis epitaxial GdBCO films were successfully prepared by ex-situ methods using nitrate precursors on IBAD metal substrate. Converted GdBCO films have very dense microstructures with good grain connectivity. EDS composition analysis of the film showed a number of Cu-rich phase in surface. The precursor solution having high copper concent with the composition of Gd : Ba : Cu = 1 : 2 : 4 showed the better grain connectivity and electrical conductivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Journal of the Korean institute of surface engineering
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• v.40 no.4
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• pp.190-196
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• 2007

Dye sensitized solar cells(DSSC) are the most promising future energy resource due to their high energy efficiency, low production cost, and simple manufacturing process. But one problem in DSSC is short life time compared to silicon solar cells. This problem occurred from photocatalytic degradation of dye material by nanometer sized $TiO_2$ particles. To prevent dye degradation as well as to increase its life time, the transparent coating film is needed for UV blocking. In this study, we synthesized nanometer sized $TiO_2$ particles in sols by increasing its internal pressure up to 200 bar in autoclave at $120^{\circ}C$ for 10 hrs. The synthesized $TiO_2$ sols were all formed with brookite phase and their particle size was several nm to 30 nm. Synthesized $TiO_2$ sols were coated on the backside of fluorine doped tin oxide(FTO) glass by ink jet printing method. With increasing coating thickness by repeated ink jet coating, the absorbance of UV region (under 400 nm) also increases reasonably. Decomposition test of titania powders dispersed in 0.1 mM amaranth solution covered with $TiO_2$ coating glass shows more stable dye properties under UV irradiation, compared to that with as-received FTO glass.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.61-66
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• 2012

Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.80-83
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• 2001

As a LCD monitor is larger and thinner, a Cold Cathode Fluorescent Lamp (CCFL) for backlight in LCD monitor gradually becomes longer and thinner. The backlight of a large LCD monitor, however, has a limitation in its brightness. In this study, a parallel multi-lamp is used in order to supply enough brightness. Though the CCFLs are made through a detail and equal manufacturing process, they don't have exactly the same features individually in their brightness, frequency, voltage and current. Consequently, it is difficult to have equal brightness at an early lighting condition or during lighting time. In this paper, a parallel multi-lamp which can have the same output under the same condition is designed. For this, 18 inch LCD monitor with four lamps is used. An inverter for multi-lamp driving is also used in this study. The newly designed inverter shows more than $90\%$ efficiency in its brightness input and output. Besides, it is also available for a multi-drive of other lamps.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2113_2114
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• 2009

Chalcopyrite based sollar cells have received much attention because of their tunable electronic and optical properties. As a typical ternary chalcopyrite material, $CuInS_2$ has been considered as one of the most popular and promising candidates as absorber materials for photovoltaic applications because of its high absorption coefficient and environmental consideration. In this study, $CuInS_2$ powders have been synthesized using polyol process of a mixture of copper nitrate, indium nitrate, and thiourea with various stoichiometric molar ratios in ethylene glycol at $196^{\circ}C$. As boiling time goes by, the color of metal ion mixed solutions were changed transparent green to dark green and finally turned to black by reduction of OH- radicals. The prepared powders were fully characterized using SEM, XRD. The particle shape of black colored powders showed sphere with about 50 nm in particle size compared to those with dark green colored powders showed irregular shape with about $1{\mu}m$ in particle size. The XRD results showed highly crystallized $CuInS_2$.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.19-24
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• 2001

The lead frame, which is principal material used in semiconductor packaging, is required to be microscopic in leads and pitches to cope with miniaturization, thin film, large scale integrated. In addition, it is indispensable to eliminate residual stress and burrs occurring at manufacturing lead frames This thesis applied electrolytic abrasion in order to remove burrs and residual stress created during the stamp process. Electrolytic abrasion removed the burrs on the surface of lead frame. Removal of residual stress highly depends on the types of electrolyte solution. In case of perchloric system, electrolytic abrasion removed 23% of residual stress. Through removal of burrs and reducing residual stress, the reliability of lead frame was substantially improved.

• Journal of the Korean Society of Safety
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• v.24 no.6
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• pp.50-54
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• 2009

Ionizer is used for improving manufacturing process and reducing inferior goods in the clean room. As a general rule, neutralization of the electrostatic charge is most important to make TFT-LCD, PDP and OLED. Pulse AC-static eliminator with output voltage of about 10.5kV has been used these days as neutralization device. But this device has a problem with lower performance which was caused by particles-adhesion on the electrode when it has been used for a long time. So we studied to solve the problem with lower performance using high Frequency(72kHz) static eliminator which was produced by Piezo transformer device, and compared Pulse-AC type with Piezo-electronic device such as decay time and ion balance for 10 weeks periods. As a result of this study, we found that Piezo transformer device has been maintained normal condition for 10 weeks. Also, we made the rule by this study, normally Piezo transformer device has to clean the electrode during every 11th weeks.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.434-442
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• 2014

Serious environmental problems have been caused by the greenhouse effect due to carbon dioxide($CO_2$) or nitrogen oxides($NO_x$) generated by the use of fossil fuels, including oil and liquefied natural gas. Many countries, including our own, the United States, those of the European Union and other developed countries around the world; have shown growing interest in clean energy, and have been concentrating on the development of new energy-saving materials and devices. Typical non-fossil-fuel sources include solar cells, wind power, tidal power, nuclear power, and fuel cells. In particular, organic solar cells(OSCs) have relatively low power-conversion efficiency(PCE) in comparison with inorganic(silicon) based solar cells, compound semiconductor solar cells and the CIGS [$Cu(In_{1-x}Ga_x)Se_2$] thin film solar cells. Recently, organic cell efficiencies greater than 10 % have been obtained by means of the development of new organic semiconducting materials, which feature improvements in crystalline properties, as well as in the quantum-dot nano-structure of the active layers. In this paper, a brief overview of solar cells in general is presented. In particular, the current development status of the next-generation OSCs including their operation principle, device-manufacturing processes, and improvements in the PCE are described.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.545-551
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• 2012

In semiconductor manufacturing, the circuit integrity of packaged BGA devices is tested by measuring electrical resistance using test sockets. Test sockets have been reported to often fail earlier than the expected life-time due to high contact resistance. This has been attributed to the formation of Sn oxide films on the Au coating layer of the probe pins loaded on the socket. Similar to contact failure, and known as "fretting", this process widely occurs between two conductive surfaces due to the continual rupture and accumulation of oxide films. However, the failure mechanism at the probe pin differs from fretting. In this study, the microstructural processes and formation mechanisms of Sn oxide films developed on the probe pin surface were investigated. Failure analysis was conducted mainly by FIB-FESEM observations, along with EDX, AES, and XRD analyses. Soft and fresh Sn was found to be transferred repeatedly from the solder bump to the Au surface of the probe pins; it was then instantly oxidized to SnO. The $SnO_2$ phase is a more stable natural oxide, but SnO has been proved to grow on Sn thin film at low temperature (< $150^{\circ}C$). Further oxidation to $SnO_2$ is thought to be limited to 30%. The SnO film grew layer by layer up to 571 nm after testing of 50,500 cycles (1 nm/100 cycle). This resulted in the increase of contact resistance and thus of signal delay between the probe pin and the solder bump.