• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.826-829
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in en atmosphere by RF reactive sputtering. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}$mtorr and all deposited films were annealed at $500^{\circ}C$ for 5hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by XRD. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO.

• 한국산학기술학회논문지
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• 제4권4호
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• pp.361-365
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• 2003

Oxide etcher장비에서 실리콘 웨이퍼를 잡고 공정을 수행할 수 있는 단극 (unipolar) 형태의 E-chuck을 제작하였다. 단극 형태의 E-chuck을 개발하기 위하여 핵심기술인 폴리이미드 박막의 코팅기술과 알미늄 표면의 양극처리기술을 개발하였다. E-chutk은 폴리이미드 재료를 표면 물질로 사용하여 플라스마에 의한 표면 손상을 최소화하였다. Oxide etcher 장비에 사용되는 핵심 부품인 E-chuck의 제조 과정을 살펴보고 히터 내장형 E-chuck을 위한 박막형 전열체 기술을 개발하였다.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.607-612
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• 1998

RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1233-1236
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• 2008

This study presents the fabrication process and display characteristics of a flexible organic polymer display device that consists of a thin substrate of Polyether Sulfone, a multilayer serpentine-type microheater array that is fabricated on the substrate, and a UV-sensitive polydiacetylene (PDA)-polyvinyl alcohol (PVA) composite film. A retention time of one second is achieved with cell sizes of $500{\mu}m$ and $700{\mu}m$ with cell-to-cell distances of $100{\mu}m$ and $200{\mu}m$, respectively.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1376-1381
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• 2004

Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and optoelectronic devices based on quantum structures. $Chen^{(1)}$ developed ballistic diffusive equation(BDE) for alternatives of the Boltzmann equation that can be applied to the complex geometrical situation. In this study, a simulation code based on BDE is developed and applied to the 1-dimensional transient heat conduction across a thin film and transient 2-dimensional heat conduction across the film with heater. The obtained results are compared to the results of the $Chen^{(1)}$ and Yang and $Chen^{(1)}$. Finally, steady 2-dimensional heat conduction in the quantum dot superlattice are solved to obtain the equivalent thermal conductivity of the lattice and also compared with the experimental data from $Borca-Tasciuc^{(2)}$.

• 센서학회지
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• 제17권3호
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• pp.183-187
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• 2008

A sub-ppm level MEMS gas sensor that can be used for the detection of formaldehyde (HCHO) is presented. It is realized by using a zinc oxide (ZnO) thin-film material with a Ni-seed layer as a sensing material and by bulk micromachining technology. To enhance sensitivity of the MEMS gas sensor with Ni-seed layer was embedded with ZnO sensing material and sensing electrodes. As experimental results, the changed sensor resistance ratio for HCHO gas was 9.65 % for 10 ppb, 18.06 % for 100 ppb, and 35.7 % for 1 ppm, respectively. In addition, the minimum detection level of the fabricated MEMS gas sensor was 10 ppb for the HCHO gas. And the measured output voltage was about 0.94 V for 10 ppb HCHO gas concentration. The noise level of the fabricated MEMS gas sensor was about 50 mV. The response and recovery times were 3 and 5 min, respectively. The consumption power of the Pt micro-heater under sensor testing was 184 mW and its operating temperature was $400^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1034-1037
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$. The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ ($<200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC varies with $T_f$.

• 한국광학회지
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• 제25권5호
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• pp.279-285
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• 2014

본 논문에서는 온도 변화에 따라 절연체-금속 상전이 특성을 보이는 이산화바나듐($VO_2$)과 메타물질을 이용하여 전기적으로 제어 가능한 테라헤르츠 변조기를 제시하였다. 변조기 기능을 하는 메타물질 구조가 $VO_2$의 도전율 변화에 영향을 주는 열을 전기적으로 조절할 수 있는 히터의 역할도 동시에 할 수 있는 정사각고리 구조의 메타물질을 설계하였다. 설계한 $VO_2$기반 메타물질 변조기의 전파 투과량은 정사각고리 메타물질에 직접 연결된 전압 인가용 도선을 통한 인가 전압 변화로 조절이 가능하다. $VO_2$의 도전율 변화에 따라 전파 투과계수는 470 GHz 에서 0.27에서 0.80으로 안정적으로 조절되었고, 13% 주파수 대역폭에서 투과계수 변화폭이 일정하게 유지되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1598-1600
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

• 센서학회지
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• 제17권5호
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• pp.329-337
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• 2008

Simple, small and portable oxygen sensors were fabricated by tape casting technique. Yttria stabilized zirconia containing cordierite ceramics (YSZC) were used as a porous diffused layer of oxygen in pumping cell. Yttria stabilized zirconia (YSZ) solid electrolyte, YSZC porous diffusion layer and heater-patterned ceramic sheets were prepared by co- firing method. Limit current characteristics and the linear relationship of current to oxygen concentration were observed. Viscosity variation of the slurries both YSZ and YSZC showed a similar behavior, but micro pores in the fired sheet were increased with increasing of the cordierite amount. Molecular diffusion was dominated due to the formation of large pores in porous diffusion layer. The plateau range of limit current in porous-type oxygen sensor was narrow than the one of aperture-type oxygen sensor. However limit current curve was appeared in porous-type oxygen sensor even at the lower applied voltage. The plateau range of limit-current was widen as increasing the thickness of porous diffusion layer of the YSZ containing cordierite. Measuring temperature of $600{\sim}650^{\circ}C$ was recommended for limit-current oxygen sensor. Porous diffusion layer-type oxygen sensor showed faster response than the aperture-type one and was stable up to 30 days running without any crack at interface between the layers.