• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.98-102
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• 2000

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO2/Si substrate using PZT(10/90) and PZT(90/10) m7etal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structures without presence of rosette structure. It can be assumed that the lower PZT layers played a role of nucleation site for the formation of the upper PZT layer. Pb-deficient PZT phase was formed at PZT/Pt interface due to the diffusion of Pb element into a Pt bottom electrode. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6%, respectively. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered film were $7.18\muC/cm^2$ and 68.5kV/cm, respectively. Leakage current densities were increased with increasing the number of coatings, and the value of the PZT-4 film was about $7\times10-8A/cm^2$ at 0.05MV/cm.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.89-96
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• 2006

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than $0.25{\mu}m$, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.12
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• pp.48-53
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• 2011

Polymer thin films were prepared by capacitively coupled plasma polymerization process for application of gate insulator. The polymer thin films revealed to form polymer layers with original properties of the monomer. Among the plasma polymer thin films, the styrene polymer having large number of phenyl sites revealed higher dielectric constant of k=3.7 than that of conventional polymer. The plasma polymerized styrene thin film revealed no hysteresis characteristics and low leakage current density of $1{\times}10^{-8}[Acm^{-2}]$ at field strength of $1[MVcm^{-1}]$, which measured by I-V and C-V measurements using MIM and MIS devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.87-95
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• 1996

We have studied the effects of La concentration on the optical and electrical properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the optical and electrical properties are greatly affected by the La concentration. The refreactiv eindices of the films varied from 2.23 to 1.93 with varying La concentration in the range from 15 to 33 mol%. The dielectric constants of the films vary form 340 to 870 with varying La concentration in the range form 15 to 33 mol%. Hysteresis loop becomes slimmer with the increase of La concentration form 15 to 28mol% and little fatter again with the increase of La concentration form 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film shows the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100Hz, the dielectric constant and the loss tangent of PLT(28) thin films are 940 and 0.08 respectively. Its leakage current density at 1.5${\times}10^{5}$V/cm is 1${\times}10^{-6}A/cm^{2}$. The comparision between the simulated and the experimental curves for the switching transient characteristics shows that PLT (28) thin films behaves like normal dielectrics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.33-36
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• 1999

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.126-126
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.108-108
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.133-133
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.59.1-59.1
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• 2007