• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.55-59
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• 2005

The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.660-663
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• 2001

The devices of BST thin films to composite (Ba$\_$0.7/ Sr$\_$0.3/)TiO$_3$using sol-gel method were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.196-199
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• 2012

CdS thin film was prepared on glass substrate by chemical bath deposition in an alkaline solution. The optical properties of CdS thin film were investigated using spectroscopic ellipsometry. The real (${\varepsilon}_1$) and imaginary (${\varepsilon}_2$) parts of the complex dielectric function ${\varepsilon}(E)={\varepsilon}_1(E)+i{\varepsilon}_2(E)$, the refractive index n(E), and the extinction coefficient k(E) of CdS thin film were obtained from spectroscopic ellipsometry. The normal-incidence reflectivity R(E) and absorption coefficient ${\alpha}(E)$ of CdS thin film were obtained using the refractive index and extinction coefficient. The critical points $E_0$ and $E_1$ of CdS thin film were shown in spectra of the dielectric function and optical constants of refractive index, extinction coefficient, normal-incidence reflectivity, and absorption coefficient. The dispersion of refractive index was analyzed by the Wemple-DiDomenico single-oscillator model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.90-90
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode($Pt/Ti.SiO_2/Si$) using RF sputtering method. The dielectric constant of SBN thin films were increased with the increase of annealing temperature. The maximum dielectric constant of SBN thin film is obtained by annealing at 700[$^{\circ}C$]. The dielectric constant and dielectric loss had a stable value within -5~+5[V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.566-569
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.155-158
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• 2002

Eu-doped lead zirconium titanate $Pb_{1.1}(Zr_{0.3}Ti_{0.7})O_{3}$ thin films on the Pt/Ti/$SiO_2$/Si substrates prepared by a metalorganic decomposition (MOD) method. The effect on the structural and electrical properties of the films measured according to Eu content. Eu-doping altered significantly the dielectric and ferroelectric properties. The remanent polarization and coercive field decreased with increasing the concentration of Eu content. The dielectric constant and dielectric loss of the film decreased with increasing Eu contents. The 3 mol% of Eu-doped PZT thin film showed large remanent polarization and the fatigue characteristic of the film did not change up to $10^9$ switching cycles.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.526-530
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.611-615
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• 2003

Eu-doped lead zirconate titanate(Pb$\sub$1.1/(Zr$\sub$0.6/Ti$\sub$0.4/)O$_3$; PZT) thin films on the Pt/Ti/SiO$_2$/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film.