• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.995-998
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• 2003

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type Si-O-C thin films. Si-O-C thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM, $H_{9}$C$_3$-Si-C $H_2$-Si-C$_3$ $H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at 40$0^{\circ}C$ were analyzed by XRD. The Si-O-C thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.11-13
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• 1992

The dielectric reliability of the Thin $SiO_2$ films of wet oxidation on n-type Si substrates has been studied by using self-healing method of breakdown and according to injection time high frequence C-V tests. These experiments have been performed to investigate the dielectric breakdown mechanism of a thin film in which positive charge generation during high-field Fowler-Nordheim tunneling are considered. In addition, The weak spots and robust areas are distinguished so that the localized dielectric breakdown could be described.

• Proceedings of the KIEE Conference
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• 1998.11b
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• pp.698-701
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• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.

• Proceedings of the KIEE Conference
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• 1998.11a
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• pp.378-381
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• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.403-409
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• 1999

The dielectric and pyroelectric properties of $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) thin films growtn on Pt/Ti/NON/Si us-ing RF magnetron sputtering have been investigated. With increasing the substrate temperature during de-position of the BST film in the range of 300-$600^{\circ}C$ the dielectric and pyroelectric constants of the film were increased due to improved crystallinity of the film. In addition the dependence of the microstructural and electrical properties of BST films onthe deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BST films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BSt films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrodes. and thus so were the pyrolelectric pro-perties of the BST film. The highest value of pyroelectric coefficient at room temperature obtained in this work was $nCcm^{-2}K^{-1}$ which is much higher than those previously reported on other perovskite fer-roelectric thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.229-229
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• 2007

In this study, HEMA-based hydrophilic copolymers were synthesized and dielectric constant (K) of the polymer thin films were investigated by change hydroxyl group (-OH) ratio in the polymer chain. The different hydroxyl group ratios were characterized by FT-IR and its thin films were obtained by spin coating. As a result, due to the moisture absorption of the hydrophilic thin film, the dielectric constant has been increased as was expected. The highest dielectric constant (K=4.19, @1MHz) was observed at 40% hydroxyl group ratio among the several polymers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.247-250
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• 2001

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. We have fabricated organic thin film transistors(OTFTs) and discuss electrical characteristics of the devices. For the gate dielectric layer, OPTMER PC403 photoacryl(JSR Co.) was spin-coated and cured at 220$^{\circ}C$. Electrical characteristics of the device were investigated, where the photoacryl dielectric layer thickness and pentacene active layer thickness were about 0.6$\mu\textrm{m}$ and 800${\AA}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.9
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• pp.397-402
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• 2005

The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.185-191
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• 2007

The purpose of this study is to evaluate the thin fihn dielectric made of hybrid sol, which consist of barium titanate powder, polymeric sol and other polymers. This sol will be used dielectric applied to small, thin electric passive components such as MLCC(Multi Layer Ceramic Condenser), resister, inductor. This sol is composed of mixed fine barium titanate powder and polymeric sol including Ba, Ti-precursor, solvent, chelating agent, chemical reaction catalyst, the additive sols to improve fired densification and temperature reliability. First at all, we mixed hybrid sol to be dispersed and be stabilized by ball milling for 24hrs. By spin coating method, we makes thin film dielectric on the convectional green sheet for MLCC. After heat treatments, we analyzes the structure morphology, physical, electrical properties and X5R Temperature properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.160-161
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75$[{\AA}/min]$. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].