• Current Photovoltaic Research
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• v.10 no.4
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• pp.101-106
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• 2022

We prepared a CsPbI₂Br solution using Cesium iodide (CsI), Lead (II) bromide (PbBr₂) and Lead (II) iodide (PbI₂) materials into a polar solvent mixture of N,N-dimethylformamide (DMF) and Dimethyl sulfoxide (DMSO). A simple spin coating technique was used for the fabrication of CsPbI₂Br absorber layer in the solution process. In order to prepare uniform coating of absorber film we adopted a hot-air process in assocation with the spin coating. It was confirmed that the thin film manufactured by the hot-air process had a higher absorption rate than that without it, and the optical band gap was measured 1.93 eV. The thin film of absorber was uniformly prepared and revealed the Black α-Cubic crystal phase as proved through X-ray diffraction analysis. Finally, a perovskite solar cell having an n-i-p structure was manufactured with a CsPbI₂Br perovskite absorption layer. From the solar cell, we obtained a power conversion efficiency (PCE) of 5.97% in a forward measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.127-127
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• 2009

The most important part of the fabrication solar cells is the anti-reflection coating when excludes the kinds of silicon substrates (crystalline, polycrystalline, or amorphous), patterns and materials of electrodes. Anti-reflection coatings reduce the reflection of sunlight and at last increase the intensity of radiation to inside of solar cells. So, we can obtain increase of solar cell efficiency about 10% using anti-reflection coating. There are many kinds of anti-reflection film for solar cell, such as SiN, $SiO_2$, a-Si, and so on. And, they have two functions, anti-reflection and passivation. However such materials could not perfectly prevent reflection. So, in this work, we investigated the anti-reflection coating with the columnar structure ZnO thin film. We synthesized columnar structure ZnO film on glass substrates. The ZnO films were synthesized using a RF magnetron sputtering system with a pure (99.95%) ZnO target at room temperature. The anti-reflection coating layer was sputtered by argon and oxygen gases. The angle of target and substrate measures 0, 20, 40, 60 degrees, the working pressure 10 mtorr and the 250 W of RF power during 40 minutes. The confirm the growth mechanism of ZnO on columnar structure, the anti-reflection coating layer was observed by field emission scanning electron microscopy (FE-SEM). The optical trends were observed by UV-vis and Elleso meter.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.386-389
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• 2008

This study has analysed power output characteristics of transparent thin-film PV module depending on incidence angle and azimuth. The simulation results was evaluated power outputs of transparent thin-film PV module depending on incidence angle and azimuth after calibrating the experimental and computed data. As a result, the best power output performance of transparent thin-film PV module was obtained at slope of $30^{\circ}$ to the south, producing the annual power output of 977kWh/kWp. The annual power output data demonstrated that the PV module with a slope of $30^{\circ}$ could produce a 68 % higher power output than that with a slope of $90^{\circ}$, with respect to the inclined slope of the module. Furthermore, the PV module facing south showed a 22 % higher power output than that facing to the east in terms of the angle of the azimuth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.279-280
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• 2008

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to 150$[^{\circ}C]$ at intervals of 50$[^{\circ}C]$. As a result, at 400$[^{\circ}C]$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.114-118
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• 2016

$Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.173-176
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• 2014

We have investigated the seed layer formation of front side contact using the inkjet printing process. Conductive silver ink was printed on textured Si wafers with 80 nm thick $SiN_x$ anti reflection coating (ARC) layers and thickened by light induced plating (LIP). The inkjet printable sliver inks were specifically formulated for inkjet printing on these substrates. Also, a novel method to prepare nano-sized glass frits by the sol-gel process with particle sizes around 5 nm is presented. Furthermore, dispersion stability of the formulated ink was measured using a Turbiscan. By implementing these glass frits, it was found that a continuous and uniform seed layer with a line width of $40{\mu}m$ could be formed by a inkjet printing process. We also investigated the contact resistance between the front contact and emitter using the transfer length model (TLM). On an emitter with the sheet resistance of $60{\Omega}/sq$, a specific contact resistance (${\rho}_c$) below $10m{\Omega}{\cdot}cm^2$ could be achieved at a peak firing temperature around $700^{\circ}C$. In addition, the correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy (SEM). We found that the added glass particles act as a very effective fire through agent, and Ag crystallites are formed along the interface glass layer.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.15-19
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• 2017

The fossil fuel power consumption generates $CO_2$, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, $Cu_2O$ is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide ($Cu_2O$) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 nm. In addition, $Cu_2O$ has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the $Cu_2O$ thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.493-496
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• 2004

Recently, organic thin films are widely used to the application of organic optoelectronic devices such as OLED, OTFT, organic solar cell, and organic laser, etc. The electrical transport of organic thin film is very important to determine the performance and thus should be analyzed for analysis of operation and design of devices. However, there have been rarely known about the electrical transport of organic thin films. As an example pentacene is known to be a good organic semiconductor to produce the best performance in OTFT at the present. But the performance is varied depending on the position of source/drain contacts and gate surface states and the thickness of thin film. Therefore, it is necessary to investigate the effects of the above-mentioned factors on the electrical properties of pentacene thin film.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.150-155
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• 2021

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 ℃. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10-4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.