• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.727-729
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• 2007

Inorganic-organic hybrid polymer provides various advantages including low-temperature process, high dielectric constant and direct photo-patterning. The hybrid dielectric was synthesized by the sol-gel process in which an acid-catalyzed solution of Si alkoxide and Zr alkoxide was used as a precursor. The electrical performance of transistors with hybrid dielectric was investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.87-87
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• 2010

We report a new patterning technique of inorganic materials by using thin-film transfer printing (TFTP) with atomic layer deposition. This method consists of the atomic layer deposition (ALD) of inorganic thin film and a nanotransfer printing (nTP) that is based on a water-mediated transfer process. In the TFTP method, the Al2O3 ALD growth occurs on FTS-coated PDMS stamp without specific chemical species, such as hydroxyl group. The CF3-terminated alkylsiloxane monolayer, which is coated on PDMS stamp, provides a weak adhesion between the deposited Al2O3 and stamp, and promotes the easy and complete release of Al2O3 film from the stamp. And also, the water layer serves as an adhesion layer to provide good conformal contact and form strong covalent bonding between the Al2O3 layer and Si substrate. Thus, the TFTP technique is potentially useful for making nanochannels of various inorganic materials.

• Journal of Magnetics
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• v.13 no.2
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• pp.53-56
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• 2008

This study proposes a simple nano-patterning process for the fabrication of magnetic nanodot arrays on a large area substrate. Ni nanodots were fabricated on a large area (4 inches in diameter) Si substrate using the soft lithographic technique using self-assembled surface micelles of Polystyrene-block-Poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer formed at the air/water interface as a mask. The hexagonal array of micelles was successfully transferred to a Ni thin film on a Si substrate using the Langmuir-Blodgett technique. After ion-mill dry etching, a magnetic Ni nanodot array with a regular hexagon array structure was obtained. The Ni nanodot array showed in-plane easy axis magnetization and typical soft magnetic properties.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.5
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• pp.8-15
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• 2018

Films with special properties (e.g., water-repellent films, optical films, anti-reflection films, and flexible films) are referred to as functional films. Recently, there has been interest in fine patterning methods for film fabrication. In particular there have been many studies that use a UV nanoimprint process involving a UV curing method. In this paper, a polymer film was fabricated by the UV nanoimprint process with a micro-pattern, and its durability was evaluated by a wear test and a nano-indentation test. The film mechanical properties (such as coefficient of friction, hardness, and modulus of elasticity) were measured. Moreover, the choice of PUA type resin used in the UV nanoimprint process was confirmed to impact the durability of the thin film. Despite making the polymer film samples using the same method and PUA type resin, different coefficient of friction, hardness, and modulus of elasticity values were obtained. PUA 4 resin had the most favorable coefficient of friction, hardness, and modulus of elasticity. This material is predicted to produce a high durability functional film.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1125-1128
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• 2007

The laminating technique for developing flexible liquid crystal display was demonstrated by using a thin UV curable polymer film and a plastic substrate with patterned polymer wall structure. We adopted the rigid wall structure to provide a solid mechanical support for the stable molecular alignment of liquid crystals (LCs) in the device. The cover film was prepared to have an ability of aligning LC molecules by patterning a micro-groove structure using the soft-lithographic process. These two substrates can be assembled tightly by the laminating and one-step UV irradiation process because of the adhesive nature of the used UV curable polymers. Proposed method can be used to fabricate the flexible LC display with simplicity and also be applicable for a cost-effective roll-to-roll process.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.8
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• pp.134-139
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• 2000

In order to understand the removal mechanism and seek the optimal conditions. KrF excimer laser ablation of Cr films on glass substrates is investigated. The surface morphology of the laser-irradiated spot is examined by SEM. The measured single-shot ablation rate is found to be about two times the result of numerical analysis based on a surface vaporization model and heat conduction theory. Surface morphology examination indicates that the Cr film is removed by the sequence of melting-surface vaporization-,melt expulsion by plasma recoil and that the outmost ripple of the diffraction pattern gives a strong effect on the morphology of molten Cr during the melting and vaporization processes. To seek the optimal process parameters for micro patterning morphological investigation is carried out experimentally on samples having different chromium film thicknesses. Optimal processing conditions are determined to enhance the accuracy and quality of thin film removal for micro patterning.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.3
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1649-1652
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (${\alpha}$- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique ${\alpha}$-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution ${\alpha}$-Si TFT-LCD panel realization.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1229-1232
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• 2008

We have successfully manufactured high-quality top-contact organic thin-film transistors using inkjet technologies with sub-femtoliter droplet volume. Silver fine lines were directly patterned by inkjet on pentacene channel layers. The minimum width of silver lines was $1{\mu}m$ with without the need for pre-patterning or surface pretreatments. The mobility was $0.3\;cm^2/Vs$.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.105-106
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• 2006

The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.