• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.465-468
• /
• 1999

Electrical properties of metal-ferroelectric-semiconductor field effect transistor(MFSFET) using $BaMgF_4$ thin films grown on p-Si(100) substrates have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}C$ in an ultra high vacuum(UHV) system. First an in-situ post-deposition annealing was conducted for 20s at $650^{\circ}C$ and second an in-situ post-annealing was conducted for 10s at $950^{\circ}C$. The electrical properties of MFSFET compared with using A1 and Pt electrodes.

• Korean Journal of Materials Research
• /
• v.20 no.8
• /
• pp.401-407
• /
• 2010

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.3
• /
• pp.200-205
• /
• 2000

This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.

• Journal of Environmental Science International
• /
• v.5 no.2
• /
• pp.211-220
• /
• 1996

New thin-and diselena-crown ethers containing two suffer and selenium donor atoms have been prepared. And then, mercury ($Hg^{2+}$) ion-selective electrodes with PVC-plasticizer (STPB) based on some macrocycles as neutral carriers were also made. The electrochemical selectivities for various ions, and the effects for macrocycles, matrix of membranes, ratio of plasticizer to macrowcles, concentration and pH of test solution were investigated on the $Hg^{2+}$ ion-selective electrodes. The 1, 10-diselena-18-crown-6-PVC-STPB (sodium tetraphenylborate) exhibited good linear responses of ${28.2}\pm{0.6}$ decade-1 for $Hg^{2+}$ ion in the conientration ranges of $10^{-2}~10^{-6}$ M $Hg^{2+}$ ion. This electrode exhibited comparatively good selectivities for $Hg^{2+}$ ion in comparison with alkali and alkaline earth metal ions, some heavy metal ions and rare earth metal ion in the range of pH 2.5~6.0. In addition, this electrode was applied as a sensor in the titration of $Hg^{2+}$ ion with $1^-$ ion in water.

• Journal of Sensor Science and Technology
• /
• v.19 no.5
• /
• pp.356-360
• /
• 2010

Due to the high surface-to-volume ratio, the 3-dimensional(3D) nanostructures of metal oxides are regarded as the best candidate materials for the chemical gas sensors. Here we have synthesised flower-like 3D zinc oxide nanostructures through a simple hydrothermal route. Specific surface area of the 3D zinc oxide nanostructures synthesised in different pH values from 9.0 to 12.0 were evaluated by using a BET analyzer and the results were compared with that of a zinc oxide thin film fabricated by rf sputtering. Using interdigitated electrodes, superior CO gas sensing properties of the 3D zinc oxide nanostructures on the ZnO thin film to those of the ZnO thin film were demonstrated.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.3
• /
• pp.129-133
• /
• 2016

Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive Micro Electromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrode called bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanar waveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductor to avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is applied between the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. In this study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switch for five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the values of pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitance ratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.11 no.5
• /
• pp.1592-1596
• /
• 2010

According to the increase of the channel length with fixed width/length, characteristic curves of drain current as a function of gate bias voltage of indium gallium zinc oxide (IGZO) thin-film transistors moved to a positive direction of gate voltage, and field-effect mobility decreased. In case of fixed length and width of channel, field-effect mobility was lower and subthreshold slope was larger when drain bias voltage was higher. Due to large work function of IGZO, band bending at the junction region between IGZO channel and source/drain electrodes was expected to be in opposite direction to that between silicon and metal electrodes; this could explain the above results.

• Journal of Sensor Science and Technology
• /
• v.20 no.6
• /
• pp.375-381
• /
• 2011

Ionic polymer-metal composite(IPMC) consists of an ion conductive membrane plated by metallic electrodes on both surfaces. When it bends, a voltage is generated between two electrodes. Since IPMC is flexible and thin, it can be easily mounted on the various surfaces of a body. The present study investigates a sensor system using IPMC to effectively detect the bending angles applied on IPMC sensor. The paper evaluates several R and C circuit models that describe the physical composition of IPMC and selects the best model for the detection of angles. The circuit models implemented with a charge model describe the relationship between input bending angles and output voltages. The identification of R and C values was performed by minimizing the error between the real output voltages and the simulated output voltages from the circuit models of IPMC sensor. Then the output signal of a sensor was fed into the inverse model of the identified model to reproduce the bending angles. In order to support the validation of the model, the output voltages from an arbitrary bending motion were also applied to the selected inverse model, which successfully reproduced the arbitrary bending motion.

• Journal of the Korean Vacuum Society
• /
• v.11 no.2
• /
• pp.103-107
• /
• 2002

Metal/ferroelectric/semiconductor field effect transistors(MFSFET′s) with various gate electrodes, that are aluminum, platinum and poly-Si, using rapid thermal annealed $LiNbO_3$/Si(100) structures were fabricated and the properties of the FET′s have been discussed. The drain current of the "on" state of FET with Pt electrode was more than 3 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 1.5 V, which means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about $10^3$ s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1399-1402
• /
• 2018

Nanorod films of cobalt oxide ($Co_3O_4$) have been grown by a unique oblique angle deposition (OAD) technique in an e-beam evaporator for supercapacitor electrode applications. This technique offers a non-chemical route to achieve large aspect ratio nanorods. The fabricated electrodes at OAD $80^{\circ}$ exhibited a specific capacitance of 2875 F/g. The electrochemically active surface area was $1397cm^{-2}$, estimated from the non-Faradaic capacitive current region. Peak energy and power densities obtained for $Co_3O_4$ nanorods were 57.7 Wh/Kg and 9.5 kW/kg, respectively. The $Co_3O_4$ nanorod electrode showed a good endurance of 2000 charge-discharge cycles with 62% retention. The OAD approach for fabricating supercapacitor nanostructured electrodes can be exploited for the fabrication of a broad range of metal oxide materials.