• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• 한국진공학회지
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• 제7권3호
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• pp.201-207
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• 1998

본 연구는 rf reactive magnetron sputtering 방법으로 증착한 ZnO 박막을 압전진동 자로 제작하였을 때 발생하는 금속전극과의 계면특성에 대해 조사하였다. 이때 ZnO 박막은 금속 아연 target을 산소분위기에서 sputtering하여 얻었다. 미리 얻은 최적성장조건으로 Cr/ZnO/Cr의 구조을 갖는 압전 진동자를 제작한 후, 금속전극과 ZnO 박막과의 계면특성을 분석하였다. 제작된 압전진동자는 I-V 측정, AES depth profile, SEM, C-V 측정등을 이용 하여 분석하였고, 이러한 분석 결과 금속전극과 ZnO 박막 사이에 $SiO_2$ 확산방지막을 쌓은 Cr/ $SiO_2$/ZnO/Cr의 구조로 ZnO 압전진동자를 제작했을 때 좋은 특성을 보임을 알 수 있었 다. 그리고, 이러한 사실은 제작된 진동자를 구동시키고 이에 대한 인가진동수에 따른 진동 변위를 측정해보므로써 확인할 수 있었다.

• ETRI Journal
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• 제35권4호
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• pp.587-593
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• 2013

We demonstrate semitransparent organic photovoltaics (OPVs) based on thin metal electrodes and polymer photoactive layers consisting of poly(3-hexylthiophene) and [6,6]-phenyl $C_{61}$ butyric acid methyl ester. The power conversion efficiency of a semitransparent OPV device comprising a 15-nm silver (Ag) rear electrode is 1.98% under AM 1.5-G illumination through the indium-tin-oxide side of the front anode at 100 $mW/cm^2$ with 15.6% average transmittance of the entire cell in the visible wavelength range. As its thickness increases, a thin Ag electrode mainly influences the enhancement of the short circuit current density and fill factor. Its relatively low absorption intensity makes a Ag thin film a viable option for semitransparent electrodes compatible with organic layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.92.1-92.1
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• 2007

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1155-1156
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• 2015

This study demonstrates hybrid-type transparent electrodes for touch screen panels. The hybrid-type electrodes were fabricated by coating carbon nanotubes (CNTs) on metal meshes. For the formation of metal meshes, thin films of silver (Ag) were deposited on glass substrates using a sputtering method and then pattenrned via photolithography to obtain mesh structures of which line width was $10{\mu}m$ and line-to-line spacing was $300{\mu}m$. CNTs were coated on Ag meshes by using electrophoretic deposition (EPD). For the samples of Ag meshes with/without CNTs, their surface morphologies, visible-range transmittances, and reflectances were characterized and compared. The experimental results indicated that the reflectance of Ag mesh electrodes was substantially reduced by coating of CNTs. Especially, the hybrid electrodes of Ag meshes with EPD-coated CNTs showed excellent properties such as transmittance higher than 90%, reflectance lower than 8%.

• 반도체디스플레이기술학회지
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• 제14권1호
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• pp.55-59
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• 2015

This study demonstrates hybrid-type transparent electrodes for touch screen panels. The hybrid-type electrodes were fabricated by coating carbon nanotubes (CNTs) on metal meshes. To form the metal-meshes, thin films of silver (Ag) were deposited on glass substrates using the sputtering method and then patterned via photolithography to obtain mesh structures whose line width was $10{\mu}m$ and line-to-line spacing was $300{\mu}m$. CNTs were coated on Ag-meshes by using two different methods, such as spray coating and electrophoretic deposition (EPD). For the samples of a Ag-meshes and CNTs-coated Ag-meshes, their surface morphologies, electrical sheet resistances, and visible-range transmittances and reflectances were characterized and compared. The experimental results indicated that the reflectance of Ag-mesh electrodes was substantially reduced by coating of CNTs. Especially, the hybrid electrodes of Ag-meshes with EPD-coated CNTs showed excellent properties such as sheet resistance lower than $20{\Omega}/{\Box}$, transmittance higher than 90 %, and reflectance lower than 8%.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.481-485
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• 2018

In this study, oxide/metal/oxide-type transparent electrodes based on Al and ZnO were investigated. Thin films of these materials were sputter-deposited at room temperature. To evaluate the thickness dependence of the oxide layers, the top and bottom ZnO layers were varied in the range of 5~80 nm and 2.5~20 nm, respectively. When the thicknesses of the top and bottom ZnO layers were fixed at 30 nm and 2.5 nm, a maximum transmitance of 66% and sheet resistance of $16.5{\Omega}/{\square}$ were achieved, which is significantly improved compared with the Al layer without top and bottom ZnO layers showing a maximum transmitance of 44.3% and sheet resistance of $44{\Omega}/{\square}$.