• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.354-354
• /
• 2012

In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.395-398
• /
• 2002

Many research group started study to develope x-ray detector using thin film transistor from 1970. But realization of TFT based x-ray detector development was caused by progress of thin film transistor liquid crystal display(TFTLCD) device technology in 1990. The main current of TFT technology is display device. Research results expend TFT technology field from display device to sensor manufacture technology. These days many research group in the world realize various digital x-ray detector. In this study, We compare discharge erasing method to visible light erasing method in a-Se based digital x-ray detector. Visible light erasing method is known reset process in direct conversion x-ray detector. Digital x-ray detector using visible light erasing method is not adaptive for conventional x-ray device, because of its thickness. And it is not avaliable for real-time imaging for digital fluoroscopy, because of its long reset time. In this study we overcome these limitations and show new idea for real-time imaging method.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.11a
• /
• pp.68-68
• /
• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• Applied Chemistry for Engineering
• /
• v.24 no.5
• /
• pp.443-455
• /
• 2013

Electrochemical studies on charge transfer reactions across the interface between two immiscible electrolyte solutions (ITIES) have greatly attracted researcher's attentions due to their wide applicability in research fields such as ion sensing and biosensing, modeling of biomembranes, pharmacokinetics, phase-transfer catalysis, fuel generation and solar energy conversion. In particular, there have been extensive efforts made on developing sensing platforms for ionic species and biomolecules via gelifying one of the liquid phases to improve mechanical stability in addition to creating microscale interfaces to reduce ohmic loss. In this review, we will mainly discuss on the basic principles, applications and future aspects of various sensing platforms utilizing ion transfer reactions across the ITIES. The ITIES is classified into four types : (i) a conventional liquid/liquid interface, (ii) a micropipette supported liquid/liquid interface, (iii) a single microhole or an array of microholes supported liquid/ liquid interface on a thin polymer film, and (iv) a microhole array liquid/liquid interface on a silicon membrane. Research efforts on developing ion selective sensors for water pollutants as well as biomolecule sensors will be highlighted based on the use of direct and assisted ion transfer reactions across these different ITIES configurations.

• International Journal of Precision Engineering and Manufacturing
• /
• v.7 no.1
• /
• pp.51-56
• /
• 2006

A computer code was developed to simulate both the thermal stresses introduced during the post-filling stage and the in-plane deformation after ejection process by finite element method based on the plane stress theory. The computer simulation was applied to the mold design of a 2 inch light guide plate (LGP) for thin film transistor (TFT)-liquid crystal displays (LCD). With injection molding experiments based on the design of experiments (DOE) technique, the influences of the processing conditions in injection molding on brightness and uniformity of the LGP were investigated, and the optimal processing parameters were selected to increase the brightness and uniformity. The verification experiment showed that the brightness and uniformity of the LGP were increased dramatically under the selected optimal processing conditions.

• Proceedings of the KSME Conference
• /
• 2007.05b
• /
• pp.2725-2730
• /
• 2007

Turbo-type molecular drag pumps ( MDPs ) are used in the liquid crystal display ( LCD ), semiconductor and other thin film industries. Siegbahn ( disk-type ) molecular drag pumps are used as high-pressure stages in the hybrid-type turbomolecular pumps, where they can operate in the viscous, the transition and the free molecular flow regime. In this study is performed to investigate the pumping characteristics of three-stage disk-type molecular drag pump ( DTDP ) in the molecular transition flow region. The experiments are measured using five vacuum pressure gauges in the positions for rotors of DTDP. The test is performed with nitrogen gas ( $N_2$ ).

• Proceedings of the Korean Fiber Society Conference
• /
• 2003.04a
• /
• pp.44-47
• /
• 2003

21C 고도정보화 시대를 맞이하여 평판표시소자에 대한 요구가 급증하여 현재는 액정표시소자 (Liquid Crystal Display, LCD)가 가장 널리 사용되고 있는데, 특히 해상도가 우수한 TFT(Thin Film Transistor)-LCD에 대한 수요가 급증하고 있다. Full color TFT-LCD를 구성하는 재료 중 가장 높은 비중을 차지하고 있는 것이 color filter이며, 이것을 제조하는 데 있어 가장 중요한 기술은 화소 형성기술이다. 특히 가격은 고가이지만 해상성이 뛰어난 TFT-LCD에 주로 사용되는 안료분산법은 신뢰성, 특히 내열성 및 공정의 복잡성 등 문제점을 가지고 있다[1]. (중략)

• Information Display
• /
• v.5 no.1
• /
• pp.25-30
• /
• 2004

Poly-Si TFT(Thin Film Transistor) technology are reviewed and discussed. Poly-Si TFTs fabricated on glass using low-temperature process were studied extensively for the application to LCD (Liquid Crystal Display) as well as to OLED(Organic Light Emitting Diode) Display. Currently, one of the application targets of the poly-Si TFT is emphasized on the highly functional SOG(System on Glass). Improvement of device characteristics such as an enhancement of carrier mobility has been studied intensively by enlarging the grain size. Reduction of the voltage and shrinkage of the device size are the trend of AM FPD(Active Matrix Flat Panel Display) as well as of Si LSI, which will arise a peculiar issue of uniformity for the device performance. Some approaches such as nucleation control of the grain seed or lateral grain growth have been tried, so far.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.314-317
• /
• 2000

In order to analyze the characteristics of complicated TFT-LCD (Thin Film Transistor-Liquid Crystal Display) circuits, it is indispensible to use simulation programs. In this study, we present a systematic method of extracting the input parameters of poly-Si TFT for Spice simulation. This method is applied to two different types of poly-Si TFTs fabricated in our group with good results. Among the Spice simulators, Pspice has the graphic user interface feature making the composition of complicated circuits easier. We added successfully a poly-Si TFT model on the Pspice simulator, which would contribute to efficient simulations of poly-Si TFT-LCD pixels and arrays.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.10a
• /
• pp.221-224
• /
• 2003

Recently, the market share of the thin-film-transistor liquid-crystalline-display (TFT-LCD) is growing rapidly in display device market. The backlight unit is used as a light source of TFT-LCD module. A light-guide is one of several important components of backlight unit. The manufacturing technology and optical system design of the light guide is very sensitive to quality and cost of the TFT-LCD module. In the present study a new manufacturing method which is called as direct surface forming(DSF) has been tested under various conditions. The result of this test, V-groove pattern shows different shapes depends on the temperature of mold surface, contact time of mold and depth of V-groove.