• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.29 no.3
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• pp.310-321
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• 2019

Objectives: The purpose of this study was to investigate types and characteristics of chemical substances used in LCD(Liquid crystal display) panel manufacturing process. Methods: The LCD panel manufacturing process is divided into the fabrication(fab) process and module process. The use of chemical substances by process was investigated at four fab processes and two module processes at two domestic TFT-LCD(Thin film transistor-Liquid crystal display) panel manufacturing sites. Results: LCD panels are manufactured through various unit processes such as sputtering, chemical vapor deposition(CVD), etching, and photolithography, and a range of chemicals are used in each process. Metal target materials including copper, aluminum, and indium tin oxide are used in the sputtering process, and gaseous materials such as phosphine, silane, and chlorine are used in CVD and dry etching processes. Inorganic acids such as hydrofluoric acid, nitric acid and sulfuric acid are used in wet etching process, and photoresist and developer are used in photolithography process. Chemical substances for the alignment of liquid crystal, such as polyimides, liquid crystals, and sealants are used in a liquid crystal process. Adhesives and hardeners for adhesion of driver IC and printed circuit board(PCB) to the LCD panel are used in the module process. Conclusions: LCD panels are produced through dozens of unit processes using various types of chemical substances in clean room facilities. Hazardous substances such as organic solvents, reactive gases, irritants, and toxic substances are used in the manufacturing processes, but periodic workplace monitoring applies only to certain chemical substances by law. Therefore, efforts should be made to minimize worker exposure to chemical substances used in LCD panel manufacturing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.562-564
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• 2001

Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic matter thin film that accumulate molecular film in archaism board only that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it. Formation that prevent when gas phase state and liquid phase state measure but Could know organic matter that molecules form equal and stable film when molecules were not distributed evenly. and accumulated in solid state only.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.562-564
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• 2001

Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic matter thin film that accumulate molecular film in archaism board only that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it. Formation that prevent when gas phase state and liquid phase state measure but Could know organic matter that molecules form equal and stable film when molecules were not distributed evenly, and accumulated in solid state only.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.54-61
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• 1991

YBCO films deposited on MgO(100) and Si(100) by rf-magnetron sputtering using stoichiometric single target were annealed under oxygen atmosphere at $880^{\circ}C$ for 1 hr. The microstructure and superconducting properties of YBCO thin films depended on the composition of pre-annealed thin films. Basal planesuperconducting particles grown on MgO(100) substrate had small and rod-like shade due to preferred orientation, while superconducting film grown on the basal plane-superconducting particles showed round-shape particles. If pre-annealed thin film had nonstoichiometric composition, liquid phase was formed during the heat treatment, which made it easy for particles to grow in the preferred orientation and thus to form textured structure. But the thin films with the textured structure did not show good superconducting properties, especially $T_c$, since the liquid phase transformed into second phase in the grain boundary during the cooling. The effect of the second phase on $T_{c, \;zero}$ was greater than that on $T_{c, \;on}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.541-544
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• 2002

The reflective liquid crystal(LC) imager in one panel Liquid Crystal on Silicon(LCoS) System must have the properties such as fast response time, high contrast ratio(C/R) and voltage holding ratio(VHR) which are more related to the lifetime of imager than the others. As the high-output light including a short wavelength from UHP lamp is exposed to LCoS imager, the indium metal impurities, which decrease the C/R and VHR, are diffused from ITO thin film on glass. To ensure the high reliable LCoS imager for HD projection TV, we have studied the effects of the plasma treatment on ITO film to reduce impurities in imager.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.175-176
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• 2018

We have developed liquis precursotr delivery system (LDS) for ultra thin film preparation in semiconductor devices. The LDS concists of 3 major parts : aerosol generator, vaporizer and vapor storage. By uaing LDS which was attached to plasma enhanced chemical vapor deposition system, thin Al2O3 layer was prepared at extremely low temperature and characterized.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.350.2-350.2
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• 2014

We investigated the structural and optical evolution of Ga2O3 thin films on glass substrates deposited using radio frequency magnetron sputtering. Initially, amorphous Ga2O3 thin film is grown, and then, surface humps and nanowire (NW) bundles are gradually formed as the film thickness increases. The surface humps are Ga-rich and provide nucleation sites for NWs through a self-catalytic vapor-liquid-solid mechanism with self-assembled Ga droplets. Both the surface humps and the NWs induce variation of the optical properties such as the optical bandgap and refractive index by absorbing light in the ultraviolet region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.57-60
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• 2003

Electro-Optical (EO) performances for the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new of diamond like carbon (DLC) thin film surface were investigated. Voltage-transmittance (V-T) curve and response time without backflow bounce in the ion beam aligned TN-LCD with ion beam exposure for 0.5 and 1min on the DLC thin film was observed. Also. the fast response time of ion beam aligned TN-LCD with ion beam exposure for 1min on the DLC thin film surface can be achieved. The residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface was almost the same as that of the rubbing aligned TN-LCD on the polyimide(PI) surface.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.231-237
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• 1999

$SrBi_{22.4}Ta_2O_9$ (SBT) thin films of 70~150 nm thickness were prepared on platinized silicon substrates by Liquid Source Misted Chemical Deposition (LSMCD) process, and their microstructure, feroelectric and leakage current characteristics were investigated. By annealing at $800^{\circ}C$ for 1 hour in oxygen ambient, SBT films were fully crystallized to the Bi layered perovskite structure without preferred orientation. The grain size of the LSMCD- derived SBT films was about 100nm, and was not varied with the film thickness. $2P_r$ and $E_c$ of the SBT films increased with decreasing the film thickness, and the 70nm-thick SBT film exhibited $2P_r$ of 17.8 $\mu$C/$\textrm{cm}^2$ and $E_c$ of 74kV/cm at applied voltage of 5V. Within the film thickness range of 70~150nm, the relative dielectric permittivity of the LSMCD-derived SBT film decreased with decreasing the film thickness. Leakage current densities lower than $10^{-7}\textrm{A/cm}^2$ at 5V were observed in the SBT films thicker than 125nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.262-267
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• 2009

Superhydrophobic $TiO_2$ thin films were successfully fabricated on a glass substrate by wet process. Layer-by-layer (LBL) deposition and liquid phase deposition (LPD) methods were used to fabricate the thin films of micro-nano complex structure with a high roughness. To fabricate superhydrophobic $TiO_2$ thin films, the (PAH/PAA) thin films were assembled on a glass substrate by LBL method and then $TiO_2$ nanoparticles were deposited on the surface of (PAH/PAA) thin film by LPD method, Subsequently, hydrophobic treatment using fluoroalkyltrimethoxysilane (FAS) was carried out on the surface of prepared $TiO_2$ thin films. The $TiO_2$ thin film fabricated with 45 minutes immersion time on $(PAH/PAA)_{10}$ showed the RMS roughness of 65.6nm, water contact angel of $155^{\circ}$ and high transmittance of above 80% (>650nm in wavelength) after the hydrophobic treatment. The Surface morphologies, optical properties and contact angel of prepared thin films with different experimental conditions were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.