• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.299-306
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• 1998

Crystallization of the amorphous silicon needs activation. Thermal energy through laser annealing, furnace annealing and rapid thermal process (RTP) has been convinced to crystallize the amorphous silicon thin film. It is expected that some other type of energy like mechanical energy can help to crystallize the amorphous silicon thin film. In this study, mechanical energy through wet blasting of silica slurry and silicon ion implantation has been applied to the amorphous silicon thin film deposited with LPCVD technique. RTP was employed for the annealing of this mechanically-damaged amorphous silicon thin film. For the characterization of the crystallized silicon thin film, XRD and Raman analysis were conducted. In this study, it is shown that the mechanical damage is effective to enhance the crystallization of amorphous silicon thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.144.2-144.2
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• 2013

With the synthesis of graphene sheets as large-scale and high quality, it is essentially important to develop suitable graphene patterning process for future industrial applications. Especially, transfer or patterning method of CVD-grown graphene has been studied. We report simple soft lithographic process to develop easily applicable patterning method of large-scale graphene sheets by using chemically functionalized polymer stamp. Also important applications, the prototype capacitors with graphene electrode and commercial polymer dielectrics for the electrostatic-type touch panel are fabricated using the developed soft lithographic patterning and transfer process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.142-142
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• 2007

Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.286-289
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• 2001

Single phase CuGaS$_2$ thin film with the highest diffraction peak of (112) at diffraction angle (2$\theta$) of 28.8$^{\circ}$ was made at substrate temperature of 7$0^{\circ}C$, annealing temperature of 35$0^{\circ}C$ and annealing time of 60 min. And second highest (204) peak was shown at diffraction angle (2$\theta$) of 49.1$^{\circ}$. Lattice constant of a and c of that CuGaS$_2$ thin film was 5.37 $\AA$ and 10.54 $\AA$ respectively. The greatest grain size of the thin film was about 1${\mu}{\textrm}{m}$. The (112) peak of single phase of CuGaS$_2$ thin film at annealing temperature of 35$0^{\circ}C$ with excess S supply was appeared with a little higher about 10 % than that of no exces S supply And the resistivity, mobility and hole density at room temperature of p-type CuGaS$_2$ thin film with best crystalline was 1.4 $\Omega$cm, 15 cm2/V . sec and 2.9$\times$10$^{17}$ cm$^{-3}$ respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS$_2$ thin film, and the polycrystalline CuGaS$_2$ thin films were made at these conditions were all p-type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.289-293
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• 2013

We have studied structural, optical, and electrical properties of the Ga-doped ZnO (GZO) thin films being usable in transparent conducting oxides. The GZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of GZO for transparent conducting oxides, the Ar gas in sputtering process was varied as 40, 60, 80 and 100 sccm, respectively. As reaction gas decreased, the crystallinity of GZO thin film was increased, the optical bandgap of GZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in reaction gas. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with decreasing reaction gas. The structural, optical, and electrical properties of the GZO thin films were affected by Ga dopant content in GZO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.177-181
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• 2011

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.43-47
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• 2001

Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10$\^$-3/∼4.51x10$\^$-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.256-259
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• 2008

An micro-probe tip must be manufactured using thin film to evaluate integrity of the semiconductor with narrow distance between pads. In this study, fatigue tests were performed for BeCu thin film which is used in micro-probe tip of semiconductor test machine. The thin film was manufactured by electro plating process, and the specimens were fabricated by wire-cut electric discharge method to make hour glass type specimen of $5000{\mu}m$ width, $29200{\mu}m$ length and $30{\mu}m$ thickness. The fatigue test of load control with 10Hz frequency was performed, in ambient environment. The fatigue cycles were tension-tension with mean stress, at stress ratio, R=0.1.