• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.177-177
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• 2013

디스플레이 화소 스위치 소자로 수소화된 비정질 실리콘 박막 트랜지스터를 금속 산화물 반도체 박막 트랜지스터(thin film transistor, TFT)로 대체하기 위한 연구가 활발히 진행되고 있다. 금속 산화물 중에서 박막 트랜지스터의 활성층으로 응용이 가능한 가장 대표적인 물질은 인듐(In), 갈륨(Ga), 아연(Zn), 산소(O) 화합물인 InGaZnO이다. InGaZnO TFT의 전기적 특성은 비정질 실리콘보다 우수한 것으로 확인이 되었지만, 소자의 신뢰성은 아직까지 해결해야 할 문제로 남아있다. 본 연구에서는 InGaZnO TFT를 제작하여 게이트 바이어스와 빛을 소자에 동시에 인가했을 때 발생하는 소자의 열화현상을 분석하였다. 다양한 채널 폭과 길이를 갖는 InGaZnO TFT를 제작하고 동시에 활성층의 구조를 두가지로 제작하였다. 첫번째는 활성층의 폭이 소오스/드레인 전극 폭보다 넓은 구조(active wide, AW)이고 두번째는 활성층의 폭이 소오스/드레인 전극 폭보다 좁은 구조(active narrow, AN) 구조이다. 이들 소자에 대해 +20 V의 게이트 바이어스와 빛을 동시에 인가하여 10000초 후의 소자 특성을 초기 특성과 비교하였을 때는 열화가 거의 발생하지 않았다. 반면 -20 V의 게이트 바이어스와 빛을 동시에 인가하여 10000초 후의 소자 특성을 초기 특성과 비교하면 전달특성 곡선이 음의 게이트 전압 방향으로 이동함과 동시에 문턱전압이하의 동작 영역에서 전달특성 곡선의 hump가 발생하였다. 이 hump 특성은 AW 구조의 소자와 AN 구조의 소자에서 나타나는 정도가 다름을 확인하였다. 이러한 열화 현상의 원인으로 음의 게이트 바이어스와 빛이 동시에 인가될 경우 InGaZnO 박막 내에는 활성층 내에 캐리어 밀도를 증가시키는 donor type의 defect가 발생하는 것으로 추정할 수 있었다. 추가적으로 활성층의 테두리 영역에서는 이러한 defect의 발생이 더 많이 발생함을 알 수 있었다. 따라서, 활성층의 테두리 영역이 소오스/드레인 전극과 직접 연결이 되는 AN 구조에서는 hump의 발생정도가 AW 구조보다 더 심하게 발생한 것으로 분석되었다.

• Fisheries and Aquatic Sciences
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• v.24 no.12
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• pp.406-414
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• 2021

The objective of this study was to investigate the yield and characteristics of collagen protein extracted from the muscle of four different species of mantis shrimp: Miyakella nepa, Harpiosquilla harpax, Erugosquilla woodmasoni, and Odontodactylus cultrifer. Mantis shrimp muscle was extracted by using a pepsin-solubilization technique, with 0.5 M acetic acid and 5% pepsin enzyme. The highest collagen yield was from M. nepa muscle (0.478 ± 0.06%), which was significantly greater (p < 0.05) than that from H. harpax, O. cultrifer, and E. woodmasoni (0.313 ± 0.03%, 0.123 ± 0.02%, and 0.015 ± 0.00%, respectively). The freeze-dried collagen appeared as thin fibers, and formed an opaque film. The pepsin-soluble collagen (PSC) from four mantis shrimp species was analyzed by gel electrophoresis. The results showed that all species of mantis shrimp contained type I collagen, consisting of β, α1, and α2 subunits with average molecular weights of 250, 145, and 118 kDa, respectively. The study of the solubility of collagen showed that, for NaCl, collagen had the highest relative solubility in 2% NaCl (80.20 ± 4.95%). In contrast, the solubility decreased at higher NaCl concentrations. However, in terms of pH, collagen had the highest relative solubility at pH 3 (91.32 ± 5.14%), and its solubility decreased at higher pH. FT-IR spectroscopy was used to compare the collagen with a model compound. Five wavenumbers in the spectrum for model collagen were identified: Amide A (3,406-3,421 cm^-1), amide B (2,916-2,940 cm^-1), amide I (1,639-1,640 cm^-1), amide II (1,539-1,570 cm^-1), and amide III (1,234-1,250 cm^-1).

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.3
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• pp.205-210
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• 2022

A novel OLED pixel circuit is proposed in this paper that uses only n-type thin-film transistors(TFTs) to improve the luminance non-uniformity of the AMOLED display caused by the threshold voltage variation of an OLED driving TFT. The proposed OLED pixel circuit is composed of 6 n-channel TFTs and 2 capacitors. The operation of the proposed OLED pixel circuit consists of the capacitor initializing period, threshold voltage sensing period of an OLED·driving TFT, image data voltage writing period, and OLED·emitting period. As a result of SmartSpice simulation, when the threshold voltage of·OLED·driving TFT varies from 1.2 V to 1.8 V, the proposed OLED pixel circuit has a maximum current error of 5.18 % at IOLED = 1 nA. And, when the OLED cathode voltage rises by 0.1 V, the proposed OLED pixel circuit has very little change in the OLED current compared to the conventional OLED pixel circuit. Therefore, the proposed pixel circuit exhibits superior compensation characteristics for the threshold voltage variation of an OLED driving TFT and the rise of the OLED cathode voltage compared to the conventional OLED pixel circuit.

• Journal of Sensor Science and Technology
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• v.32 no.3
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• pp.169-173
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• 2023

With the increasing concern of global warming caused by greenhouse gases owing to the recent industrial development, there is a growing need for advanced technology to control these emissions. Among the various greenhouse gases, nitrogen dioxide (NO₂) is a major contributor to global warming and is mainly released from sources, such as automobile exhaust and factories. Although semiconductor-type NO₂ gas sensors, such as SnO₂, have been extensively studied, they often require high operating temperatures and complicated manufacturing processes, while lacking selectivity, resulting in inaccurate measurements of NO₂ gas levels. To address these limitations, a novel sensor using PbS quantum dots (QDs) was developed, which operates at low temperatures and exhibits high selectivity toward NO₂ gas owing to its strong oxidation reaction. Furthermore, the use of P3HT conductive polymer improved the thin film quality, reactivity, and reaction rate of the sensor. The sensor demonstrated the ability to accurately measure NO₂ gas concentrations ranging from 500 to 100 ppm, with a 5.1 times higher sensitivity, 1.5 times higher response rate, and 1.15 times higher recovery rate compared with sensors without P3HT.

• Journal of Electrochemical Science and Technology
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• v.14 no.1
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• pp.85-95
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• 2023

In recent years, solid-state Li metal batteries (SSLBs) have attracted significant attention as the next-generation batteries with high energy and power densities. However, uncontrolled dendrite growth and the resulting pulverization of Li during repeated plating/stripping processes must be addressed for practical applications. Herein, we report a plastic-crystal-based polymer/ceramic composite solid electrolyte (PCCE) to resolve these issues. To fabricate the one-side ceramic-incorporated PCCE (CI-PCCE) film, a mixed precursor solution comprising plastic-crystal-based polymer (succinonitrile, SN) with garnet-structured ceramic (Li₇La₃Zr₂O₁₂, LLZO) particles was infused into a thin cellulose membrane, which was used as a mechanical framework, and subsequently solidified by using UV-irradiation. The CI-PCCE exhibited good flexibility and a high room-temperature ionic conductivity of over 10^-3 S cm^-1. The Li symmetric cell assembled with CI-PCCE provided enhanced durability against Li dendrite penetration through the solid electrolyte (SE) layer than those with LLZO-free PCCEs and exhibited long-term cycling stability (over 200 h) for Li plating/stripping. The enhanced Li⁺ transference number and lower interfacial resistance of CI-PCCE indicate that the ceramic-polymer composite layer in contact with the Li anode enabled the uniform distribution of Li⁺ flux at the interface between the Li metal and CI-PCCE, thereby promoting uniform Li plating/stripping. Consequently, the Li//LiFePO₄ (LFP) full cell constructed with CI-PCCE demonstrated superior rate capability (~120 mAh g^-1 at 2 C) and stable cycle performance (80% after 100 cycles) than those with ceramic-free PCCE.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Journal of Soil and Groundwater Environment
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• v.6 no.2
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• pp.3-13
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• 2001

It has been known that nonlinear characteristics of sorption affect the transport behavior of water soluble pollutants in soils. However detailed experimental studies have not been performed to verify the effect of non-linearity of adsorption isotherm on transport of chemicals in porous media. In this research, the distortion of breakthrough curves of a cationic surfactant (cetylpyridinium chloride, CPC) in a engineered stainless steel column packed with glass beads were investigated. Glass beads with about 110 $\mu\textrm{m}$diameter coated with a thin n-decane film were used as the media providing the sorption surface for CPC. The CPC adsorption isotherm on the surface of n-decane from aqueous solution was a typical Langmuir type. The breakthrough curve of CPC using step Input showed a late breakthrough on the front side and early breakthrough on the back side accordance to the shape of the isotherm. The retardation factor of CPC was found to be a strong function of the input concentration, which also a manifestation of the non-linearity of the isotherm. The retardation factors for the CPC with step input agreed with those of pulse input that the maximum concentrations are controlled to be the same as the step input concentrations. This results support the validity of the unproven field practices of using hydrogeotracers with non-linear adsorption isotherms to determine the hydrogeological parameters, e.g., NAPL saturation, air-water or NAPL-water interfacial areas.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.837-842
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• 1998

As the size of the integrated circuit is scaled down the importance of Si cleaning has been emphasized. One of the major concerns is abut the removal of metallic impurities such as Cu and Fe on Si surface. In this study, we intentionally contaminated Cu and Fe on the Si wafers and cleaned the wafer by cleaning splits of the chemical mixture of $\textrm{H}_2\textrm{O}_2$ and HF and the combination of HF treatment with UV/$\textrm{O}_3$ treatment. The contamination level was monitored by TXRF. Surface microroughness of the Si wafers was measured by AFM. The Si wafer surface was examined by SEM. AES analysis was carried out to analyze the chemical composition of Cu impurities. The amount of Cu impurities after intentional contamination was abut the level of $\textrm{10}^{14}$ atoms/$\textrm{cm}^2$. The amount of Cu was decreased down to the level of $\textrm{10}^{10}$ atoms/$\textrm{cm}^2$ by cleaning splits. The repeated treatment exhibited better Cu removal efficiency. The surface roughness caused by contamination and removal of Cu was improved by repeated treatment of the cleaning splits. Cu were adsorbed on Si surface not in a thin film type but in a particle type and its diameter was abut 100-400${\AA}$ and its height was 30-100${\AA}$. Cu was contaminated on Si surface by chemical adsorption. In the case of Fe the contamination level was $\textrm{10}^{13}$ atoms/$\textrm{cm}^2$ and showed similar results of above Cu cleaning. Fe was contaminated on Si surface by physical adsorption and as a particle type.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.34-39
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• 2006

Pure and Fe-doped CuO thin-film and powder samples were prepared using a sol-gel method. Undoped CuO films exhibited monoclinic structure and p-type electrical conductivity $(\~10^{-2}\;{\Omega^{-1}\;cm^{-1}$ due to copper deficiency. On the other hand, CuO: Fe films were found to be insulating and Li doping on the films led to a restoration of p-type conductivity and a ferromagnetic hysteresis behaviour at room temperature. The observed properties far the CuO : Fe, Li films can be explained in terms of hole creation by substitution of $Li^+$ for $Cu^{2+}$ sites and mediation of long-range interactions between $Fe^{3+}$ ions by the $Li^+$-induced defect states. CuO: Fe powders exhibited a ferromagnetism at room temperature with its strength being dependent on post-annealing temperature. Mossbauer measurements on the CuO: Fe films and powders revealed that the octahedral $Cu^{2+}$ sites are mostly substituted by $Fe^{3+}$ ions.