• Journal of the Korean Society for Precision Engineering
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• v.20 no.9
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• pp.135-141
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• 2003

MEMS structures generally have been fabricated using surface-machining method, but the interface failure between silicon substrate and evaporated thin film frequently takes place due to the residual stress inducing by the applied the various loads. And the very important physical property in the heated environment is the linear coefficient of thermal expansion. Therefore this paper studied the residual stress caused the thermal loads in the thin film and introduced the simple method to measure the trend of the residual stress by the indentation. Specimens were made of materials such as Al, Au and Cu and thermal load was applied repeatedly. The residual stress was measured by nano-indentation using AFM and FEA. The existence of the residual stress due to thermal load was verified by the experimental results. The indentation length of the thermal loaded specimens increased minimum 11.8％ comparing with the virgin thin film caused by tensile residual stress. The finite element analysis results are similar to indentation test.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1448-1452
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• 2003

A scratch tester was developed to evaluate the adhesive strength at interface between thin-film and substrate(silicon wafer). Under force control, the scratch tester can measure the normal and the tangential forces simultaneously as the probe tip of the equipment approaches to the interface between thin-film and substrate of wafer. The capacity of each component of force sensor is 0.1 N ${\sim}$ 100 N. In addition, the tester can detect the signal of elastic wave from AE sensor(frequency range of 900 kHz) attached to the probe tip and evaluate the bonding strength of interface. Using the developed scratch tester, the feasibility test was performed to evaluate the adhesive strength of thin-film.

• Transactions of the Society of Information Storage Systems
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• v.9 no.2
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• pp.67-71
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• 2013

The fabrication method of plasmonic nanodots on silicon substrate has been developed to improve the efficiency of thin film solar cells. Nanoscale metallic nanodots arrays are fabricated by anodic aluminum oxide (AAO) template mask which can have different structural parameters by varying anodization conditions. In this paper, the structural parameters of gold nanodots, which can be controlled by the diverse structures of AAO template mask, are investigated to enhance the optical properties of a-Si thin film solar cells. It is found that optical properties of the thin film solar cells are improved by finding optimization values of the structural parameters of the gold nanodot array.

• Journal of the Korean institute of surface engineering
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• v.26 no.3
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• pp.115-120
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• 1993

Aluminum thin films were deposited on the silicon substrate by the pyrolysis of TrilsoButylAluminum (TIBA) in a cold wall LPCVD reactor. The effect of substrate on the surface topograply and the decomposition reaction was investigated. The activation energy for the decomposition of TIBA was turned out to be 1 eV from the Arrhenious plot. The surface topography of the CVD aluminum could be improved by the application of thin metal film, which was in-situ deposited on the silicon prior to CVD process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.55-59
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• 1993

In this study, we developed new process for doping poly-Si film. Sb(antimony) thin film was used as doping source. Sb was evaporated on poly-Si film deposited by LPCVD fallowed by annealing. We investigate sheet resistance variation with annealing temperature and time. Finally we adapted this process to poly-Si TFT fabrication.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.12
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• pp.28-32
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• 2010

Technical demands for aspheric glass lens formed in market increases its application from simple camera lens module to fiber optics connection module in optical engineering. WC is often used as a metal core of the aspheric glass lens, but the long life time is issued because it fabricated in high temperature and high pressure environment. High hard thin film coating of lens core increases the core life time critically. Diamond Like Carbon(DLC) thin film coating shows very high hardness and low surface roughness, i.e. low friction between a glass lens and a metal core, and thus draw interests from an optical manufacturing industry. In addition, DLC thin film coating can removed by etching process and deposit the film again, which makes the core renewable. In this study, DLC films were deposited on the SiC ceramic core. The process variable in FVA(Filtered Vacuum Arc) method was the substrate bias-voltage. Deposited thin film was evaluated by raman spectroscopy, AFM and nano indenter and measured its crystal structure, surface roughness, and hardness. After applying optimum thin film condition, the life time and crystal structure transition of DLC thin film was monitored.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.502-505
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• 2004

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a SiC (Silicon Carbide) thin film. SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability make SiC an attractive candidate for electronic applications. A homeotropic alignment of nematic liquid crystal by ion beam (IB) exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface until annealing temperature of $300^{\circ}C$. Consequently, homeotropic alignment effect of liquid crystal and the good thermal stability by the ion beam alignment method on the SiC thin film layer can be achieved.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.501-507
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• 2010

Changes in surface morphology and roughness of dc sputtered ZnO:Al/Ag back reflectors by varying the deposition temperature and their influence on the performance of flexible silicon thin film solar cells were systematically investigated. By increasing the deposition temperature from $25^{\circ}C$ to $500^{\circ}C$, the grain size of Ag thin films increased from 100 nm to 1000 nm and the grain size distribution became irregular, which resulted in an increment of surface roughness from 6.6 nm to 46.6 nm. Even after the 100 nm thick ZnO:Al film deposition, the surface morphology and roughness of the ZnO:Al/Ag double structured back reflectors were the same as those of the Ag layers, meaning that the ZnO:Al films were deposited conformally on the Ag films without unnecessary changes in the surfacefeatures. The diffused reflectance of the back reflectors improved significantly with the increasing grain size and surface roughness of the Ag films, and in particular, an enhanced diffused reflectance in the long wavelength over 800 nm was observed in the Ag back reflectors deposited at $500^{\circ}C$, which had an irregular grain size distribution of 200-1000 nm and large surface roughness. The improved light scattering properties on the rough ZnO:Al/Ag back reflector surfaces led to an increase of light trapping in the solar cells, and this resulted in a noticeable improvement in the $J_{sc}$ values from 9.94 mA/$cm^2$ for the flat Ag back reflector at $25^{\circ}C$ to 13.36 mA/$cm^2$ for the rough one at $500^{\circ}C$. A conversion efficiency of 7.60% ($V_{oc}$ = 0.93, $J_{sc}$ = 13.36 mA/$cm^2$, FF = 61%) was achieved in the flexible silicon thin film solar cells at this moment.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.31-31
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.