• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.539-542
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions at the calcine temperature of $700^{\circ}C$ and sintering temperature of $1300^{\circ}C$ in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on Si(100) substrate and prepared $ZnGa_2O_4$ phosphor thin film is annealed by rapid thermal processor(RTP) at $700^{\circ}C$, 15sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodoluminescenre(CL) spectrums of $ZnGa_2O_4$ phosphor thin film show main peak of 420nm and maximum intensity at the substrate temperature of $500^{\circ}C$ and annealing temperature of $700^{\circ}C$ 15sec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1092-1095
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions as calcine and sintering temperature in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on $Pt/Ti/SiO_2/Si$ substrate and prepared $ZnGa_2O_4$ Phosphor thin film is annealed by rapid thermal processor(RTP) at $750^{\circ}C$, 10 sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodolumincsccnce(CL) succtrums of $ZnGa_2O_4$ phosphor target show main peak of 360nm and broad bandwidth of about 180nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1547-1550
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• 2007

$YVO_4:Eu^{3+}$ thin film phosphor samples have been deposited by using RF magnetron sputter deposition technique with various deposition temperatures. The Effect of deposition temperature (room temperature to $450\;^{\circ}C$) on morphological, crystal structure, and luminescence properties of $YVO_4:Eu^{3+}$ thin film phosphor has also been investigated. As the deposition temperature increases, the size of crystal grain and surface roughness of thin film increases principally and its crystallinity also increases. It is found that the asdeposited $YVO_4:Eu^{3+}$ thin film excited either photon or electron shows typical luminescence spectra successfully. CIE color coordinates of $YVO_4:Eu^{3+}$ thin film phosphor with increasing deposition temperature moved towards more reddish region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.187-191
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• 2005

A ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions at a calcine temperature of 700 $^{\circ}C$ and sintering temperature of 1300 $^{\circ}C$ in order to deposit ZnGa$_2$O$_4$ phosphor thin film at various temperature using rf magnetron sputtering system. A ZnGa$_2$O$_4$ phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP) at 700 $^{\circ}C$, for 15 sec. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target and thin film showed the main peak (311) direction. ZnGa$_2$O$_4$ thin film has better crystalization due to as function of increasing substrate and annealing temperature. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor thin film showed the main peak 420 nm wavelength and the maximum intensity at the substrate temperature of 500 $^{\circ}C$ and annealing temperature of 700 $^{\circ}C$, for 15 sec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1347-1351
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• 2004

The ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions as calcine and sintering temperature in order to deposit ZnGa$_2$O$_4$ Phosphor thin film by rf magnetron sputtering system. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target showed the position of (311) main peak. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor target showed main peak of 370 nm to 400 nm, and maximum intensity at the calcine temperature of $700^{\circ}C$ and sintering temperature of 130$0^{\circ}C$. It was possible to prepare The ZnGa$_2$O$_4$ phosphor thin film with synthesized ZnGa$_2$O$_4$ phosphor target and The prepared ZnGa$_2$O$_4$ phosphor thin film showed the position of (311) main peak.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1621-1624
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• 2008

Transparent ac-PDP test panel was prepared via a combination of materials including ITO sustaining electrodes, thin film dielectric layer and nano-sized phosphor powders. The thin film dielectric layer was prepared by E-beam evaporation process and phosphor layer was deposited on metal mesh pattern by electrophoretic deposition process. The optical transmittance and luminance of the panel indicated that full color transparent ac-PDP is feasible with the approach.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1091-1094
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• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1145-1148
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• 2008

The present status and trend of oxide phosphor thin-film development for thin-film electroluminescent (TFEL) device application are presented in this paper. Recently, several newly developed types of bendable or bendable see-through oxide TFEL lamps have been fabricated using the TFEL technology with a newly developed bendable ceramic sheet, glass sheet or sapphire sheet substrate, which has become available on the market. Stable operation at high temperatures was obtained in double-insulating-layer-type TFEL lamps fabricated with a $Zn_2Si_{0.6}Ge_{0.}4O_4$:Mn thin-film emitting layer forming on translucent or transparent bendable sheet substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.102-105
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• 2004

With varying rapid thermal annealing (RTA) temperature, luminescent properties of ZnMgS:Mn thin film sputter-deposited with one target were measured. Although all samples have the same composition, $Zn_{1-x}Mg_xS:Mn$ (x=0.25) can emit luminescence between 580 and 614 nm, which is controlled by only RTA temperature. It is understood that the energy band gap shift of ZnMgS:Mn thin film phosphor occurs with varying RTA temperature.