• Bulletin of the Korean Chemical Society
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• v.19 no.8
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• pp.830-835
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• 1998

The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

• Advances in materials Research
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• v.2 no.4
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• pp.181-193
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• 2013

Description and theory of spin coating technique has been elaborately outlined and a spin coating machine designed and fabricated using affordable components. The system was easily built with interdisciplinary knowledge of mechanics, fluid mechanics and electronics. This equipment employs majorly three basic components and two circuit units in its operation. These include a high speed dc motor, a proximity sensor mounted at a distance of about 15 mm from a reflective metal attached to the spindle of the motor to detect every passage of the reflective metal at its front and generate pulses. The pulses are transmitted to a micro-controller which process them into rotational speed (revolution per minute) and displays it on a lead crystal display (LCD) which is also a component of the micro-controller. The circuit units are a dc power supply unit and a PWM motor speed controlling unit. The various components and circuit units of this equipment are housed in a metal casing made of an 18 gauge black metal sheet designed with a total area of 1, $529.2cm^2$. To illustrate the use of the spin-coating system, ZnO sol-gel films were prepared and characterized using SEM, XRD, UV-vis, FT-IR and RBS and the result agrees well with that obtained from standard equipment and a speed of up to 9000 RPM has been achieved.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.4
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• pp.214-220
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• 2018

Light sources induced by gas discharge using rare gases have been widely used in the thin film deposition, the surface modification and the polymer etching. A dielectric barrier discharge (DBD) has been developed in order to consistently emit light and control the wavelength of the emission light. However, much research on the characteristics of the movement of discharge particles is required to improve the efficiency of the light lamp and the life-time of the light apparatus in detail. In this paper, we developed a He DBD discharge simulation tool and investigated the characteristics of discharge particles which were electrons, two positive ions ($He^+$, $He_2^+$) and 5 excited particles ($He^*(1S)$, $He^*(3S)$, $He^*$, $He^{**}$, $He^{***}$). The discharge currents showed the transition from pulse mode to continuous mode with the increase of power. With the accumulated charges on the barrier walls, the discharge current was rapidly increased and caused oscillation of the discharge voltage. As the gas pressure increased, $He_2^+$ and $He^*(3S)$ became the dominant activated particles. The input power was mostly consumed by electrons and $He_2^+$ ion. And the change curve showed that power consumption by electrons increased more with gas pressure than with source voltage or frequency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.432-436
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• 2019

In this study, we produced a light, flexible, wearable gas sensor by depositing MWCNTs (Multi-walled Carbon Nanotubes) into nylon. MWCNTs are widely used as a gas sensor material due to their excellent mechanical, electrical and physical characteristics. We produced a gas sensor to detect NOx gases by depositing nylon yarn in a MWCNT solution. The MWCNT solution was made by mixing 3 mg MWCNT in 5 ml of ethanol. Nylon yarn was placed in the manufactured solution and ultrasonic waves were applied using an ultrasonicator for 3 h, resulting in MCWNT deposition. The MWCNT-deposited nylon yarn was dried at room temperature for 24 h. The MWCNT-thin-film-coated nylon yarn was masked 1 mm apart, and gold was then deposited on the masked nylon yarn to create the gas sensor. The sensor then was installed in a chamber with a controlled atmospheric environment and exposed to NOx gas. The changing signal from the sensor was amplified to analyze its gas detection characteristics.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.4
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• pp.645-650
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• 2019

In this paper, a specifically designed waveguide structure that can carry first, and second-order orbital angular momentum(: OAM) mode is proposed. The proposed optical waveguide consists of three Si stripes embedded in $SiO_2$, which is suitable for implementing on-chip integration and fabrication by standard thin film deposition and etching processes. The second-order OAM mode was generated by combining two eigenmodes, which are calculated by finite difference method(: FDM). The topological charge number of the first, and second-order OAM mode was calculated as l=0.9642 and 1.8766 respectively, which is close to the theoretical value.

• Progress in Superconductivity
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• v.2 no.2
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• pp.71-75
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• 2001

The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.16-22
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• 2023

In a solar cell, degradation refers to the decrease in performance parameters caused by defects originated due to various causes. During the fabrication process of solar cells, degradation is generally related to the processes such as passivation or firing. There exist sources of many types of degradation; however, the exact cause of Light and elevated Temperature Induced Degradation (LeTID) is yet to be determined. It is reported that the degradation and the regeneration occur due to the recombination of hydrogen and an arbitrary substance. In this paper, we report the deposition of Al₂O₃ and SiN_X on silicon wafers used in the Passivated Emitter and Rear Contact (PERC) solar structure and its degradation pattern. A higher degradation rate was observed in the sample with single layer of Al₂O₃ only, which indicates that the degradation is affected by the presence or the absence of a passivation thin film. In order to alleviate the degradation, optimization of different steps should be carried out in consideration of degradation in the solar cell fabrication process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.44-44
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• 2003

Growth mechanism of carbon nanotubes(CNTs) synthesized by chemical vapor deposition is abided by two growth modes. These growth modes are classified by the position of activated catalytic metal particle in the CNTs. Growth mode can be also affected by interaction between substrate and catalytic metal and induced energy such as thermal and plasma. We studied the reaction of catalytic metal to the substrate and growth mode of CNTs. Various substrates such as Si(100), graphite plate, coming glass, sapphire and AAO membrane are used to study the relation between catalytic metal and substrate in the synthesis of CNTs. For catalytic metal, thin film was deposited on various substrate via sputtering technique with a thickness of ∼20nm and magnetic fluids with none-sized particles were dispersed on AAO membrane. After laying process on AAO membrane, it was dried at 80$^{\circ}C$ for 8 hour. Synthesizing of CNTs was carried out at 900$^{\circ}C$ in NH3/C2H2 mixture gases flow for 10minutes.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.53-58
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• 1997

It is well known that the equiatomic FeAl alloy crystallizes in a paramagnetic CsCl structure and is very stable in a wide temperature range owing to a significant charge transfer from Al to Fe. A presence of structural defects normally enhances the magnetic and magneto-optical properties of this alloy. In this study spin-resolved photoemission and magnetic circular dichroism (MCD) were carried out on both ordered and disordered $Fe_{0.52}Al_{0.48}$ alloy films. The disordered state in the alloy films was obtained by a vapor quenching deposition on cooled substrates. It is shown that the order-disorder transition in the Fe0.52Al0.48 alloy films leads to a significant change in the spin polarization. Form the MCD results the orbital and spin magnetic moments of the constituent atoms are obtained. According to the sum rule the spin and orbital magnetic moments of Fe in the disordered FeAl film are $\mu\frac{SR}{spin}=0.8\mu_B$ and $\mu\frac{SR}{orb}=0.14\mu_B$ respectively. The spin magnetic moment is also evaluated to be $\mu\frac{BR}{spin}=0.77\mu_B$ by the branching ration method employing a photon polarization of 90%.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.189-193
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• 2001

We have characterized physical and electrical properties of W-TiN stacked gate electrode structure with TiN as a diffusion barrier of fluorine. As the $N_2/Ar$ gas ratio increased during sputter deposition, TiN thin films became N-rich, and the resistivity of the films increased. However, the resistivity of W-TiN stacked gate reduced as a result of the crystallization of tungsten with the increase of $N_2/Ar$ gas ratio. On the other hand, tungsten in W-TiN stacked gate structure have the (100)-oriented crystalline structure although TiN films were subjected to annealing at high temperature (600~$800^{\circ}C$). Leakage currents of W-TiN gate MOS capacitors were less than $10^{-7}\textrm{/Acm}^2$ and also were lowered by the order of 2 compared with those of pure W gate electrode.