• Proceedings of the Membrane Society of Korea Conference
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• 2004.05b
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• pp.82-85
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• 2004

Flux-enhancement mechanism of thin-film-composite (TFC) membranes for the reverse comosis (RO) process was newly explained by positron annihilation lifetime spectroscopy (PALS) that has been found to be applied for detecting molecular vacancies or pores having sizes that are equivalent to salt or hydrate ions in RO membrane.(omitted)

• Proceedings of the Membrane Society of Korea Conference
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• 1998.04a
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• pp.17-20
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• 1998

1. 서론 : 계면중합은 제조에 따른 박막의 성능 조절이 가능한 이유로 해서 역삼투용 복합막의 주요 제조 방법으로 제시되어 왔다. 계면중합을 응용하여 제조된 복합막의 성능은 반응 단량체의 종류, 용재의 종류, 단량체의 농도, 반응시간, 열처리 유무 및 온도와 시간 등에 의해 변한다. 한편 위의 변수에 절대적인 영향을 받고 아울러 단량체간의 몰 비가 성립하지 않음으로 해서 최적의 막 성능으로 제시되는 조건을 만족하기 위하여 주로 시행착오에 의한 방법을 동원하여 여러 변수에 다른 제조 막의 성능 고찰을 실시하여 왔다. (생략)

• Proceedings of the Membrane Society of Korea Conference
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• 2004.05a
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• pp.170-174
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• 2004

Most of thin film composite reverse osmosis membranes include amide linkages, which are susceptible to chlorine attack resulting in N-chloro derivatives. This study examined a new method based on post-treatment of reverse osmosis membrane with various silane derivatives to improve chlorine resistance. The silane derivatives contain one alkyl group and three alkoxy groups such as trifluoromethyltrimethoxysilane, 3-aminopropylmethoxydiethoxysilane and 3, 3, 3-trifluoropropyltrimethoxysilane. Compared to commercial membranes, silane derivatives coated membranes showed significantly enhanced chlorine durability.

• Membrane Journal
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• v.31 no.1
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• pp.16-34
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• 2021

Water supplies are decreasing in comparison to increasing clean water demands. Using nanofiltration is one of the most effective and economical methods to meet the need for clean water. Common methods for desalination are reverse osmosis and nanofiltration. However, pristine membranes lack the essential features which are, stability, economic efficiency, antibacterial and antifouling performances. To enhance the properties of the pristine membranes, graphene oxide (GO) is a promising and widely researched material for thin film composites (TFC) membrane due to their characteristics that help improve the hydrophilicity and anti-fouling properties. Modification of the membrane can be done on different layers. The thin film composite membranes are composed of three different layers, the top filtering active thin polyamide (PA) layer, supporting porous layer, and supporting fabric. Forward osmosis (FO) process is yet another energy efficient desalination process, but its efficiency is affected due to biofouling. Incorporation of GO enhance antibacterial properties leading to reduction of biofilm formation on the membrane surface. Pressure retarded osmosis (PRO) is an excellent process to generate clean energy from sea water and the biofouling of membrane is reduced by introduction of GO into the active layer of the TFC membrane. Different modifications on the membranes are being researched, each modification with its own advantages and disadvantages. In this review, modifications of nanofiltration membranes and their composites, characterization, and performances are discussed.

• Composites Research
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• v.29 no.6
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• pp.401-407
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• 2016

IPMC is composed of thin ion conductive polymer film sandwiched between metallic electrodes plated on both surfaces. Ionic Polymer-Metal Composite (IPMC) generates voltages when bent by mechanical stimuli. IPMC has a potential for the variety of energy harvesting applications due to its soft and hydrophilic characteristics. However, the large-scale implementation is necessary to increase the output power. In this paper, the scale-up of surface area effect on voltage generation characteristics of IPMC was investigated using IPMC samples with different surface areas. Also, a circuit model simulating both the output voltage and its offset variations was designed for estimating the voltages from IPMC samples. The proposed model simulated the output voltages with offsets well corresponding to various frequencies of input bending motion. However, some samples showed that the increase of error between real and simulated voltages with time due to the nonlinear characteristic of offset variations.

• Composites Research
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• v.35 no.3
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• pp.175-181
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• 2022

Due to the increasing number of wireless communication devices in mmWave frequency bands, there is a high demand for electromagnetic interference (EMI) shielding and heat dissipating materials to avoid device malfunctions. This paper proposes an EMI shielding composite film with a high heat dissipation characteristic. To achieve this, a conductive grid is integrated with a polymer-based composite layer including magnetic and heat dissipating filler materials. A high shielding effectiveness (>40 dB), low reflection shielding effectiveness (<3 dB), high thermal conductivity (>10 W/m·K), thin thickness (<500 ㎛) are simultaneously achieved with a tailored design of composite layer compositions and grid geometries in 5G communication band of 26.5 GHz.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.293-297
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• 2016

Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about $10^2{\mu}{\Omega}cm$ for the carbide films to about $10^4{\mu}{\Omega}cm$ for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of $CH_4$. For the films deposited at $200^{\circ}C$, TCR decreased with increasing $CH_4$ flow rate; especially, it changed sign from positive to negative at a $CH_4$ flow rate of 0.35 sccm. By increasing the $CH_4$ flow rate, the amorphous component in the film increased; thus, the portion of $Ni_3C$ grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of $CH_4$. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with $Ni_3C$ nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.3
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.28-33
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• 2011

This paper describes the fabrication of AlN thin films containing iron and iron nitride particles, and the magnetic and electrical properties of such films. Fe-N-Al alloy films were deposited in Ar and $N_2$ mixtures at ambient temperature using Fe/Al composite targets in a two-facing-target DC sputtering system. X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annealing for 5 h both AlN and bcc-Fe/bct-$FeN_x$ phases appeared. Structure changes in the $FeN_x$ phases were explained in terms of occupied nitrogen atoms. Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. The grain size of magnetic particles ranged from 5 to 20 nm in diameter depending on annealing conditions. The saturation magnetization as a function of the annealing time for the $Fe_{55}N_{20}Al_{25}$ films when annealed at 573, 773 and 873 K. At these temperatures, the amount of iron/iron nitride particles increased with increasing annealing time. An increase in the saturation magnetization is explained qualitatively in terms of the amount of such magnetic particles in the film. The resistivity increased monotonously with decreasing Fe content, being consistent with randomly dispersed iron/iron nitride particles in the AlN film. The coercive force was evaluated to be larger than $6.4{\times}10^3Am^{-1}$ (80 Oe). This large value is ascribed to a residual stress restrained in the ferromagnetic particles, which is considered to be related to the present preparation process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.40-40
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• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.