• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.192-193
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• 2006

A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068 ${mu}m^2$) capacitors was about 16 ${\mu}C/cm^2$ at 3V and the uniformity within an 8-inch wafer was about 2.8%. But a lot of cells were failed randomly during the measuring the bit-line signal of each cell. It was revealed that the Grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the uniformity of the grain size and orientation was improved by changing the process conditions of post heat treatment. The temperature of nucleation step was the very effective on varying the microstructure of the BLT thin film. The optimized temperature of the nucleation step was $560^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

• ETRI Journal
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• 제39권6호
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• pp.874-879
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• 2017

This paper challenges the fabrication of a thin film energy storage device on a flexible polymer substrate specifically by replacing most commonly used metal foil current collectors with coated current collectors. Mass-manufacturable spray-coating technology enables the fabrication of two different half-cell electric double layer capacitors (EDLC) with a spray-coated silver paste current collector and a Ni foil current collector. The larger specific capacitances of the half-cell EDLC with the spray-coated silver current collector are obtained as 103.86 F/g and 76.8 F/g for scan rates of 10 mV/s and 500 mV/s, respectively. Further, even though the half-cell EDLC with the spray-coated current collector is heavier than that with the Ni foil current collector, smaller Warburg impedance and contact resistance are characterized from Nyquist plots. For the applied voltages ranging from -0.5 V to 0.5 V, the spray-coated thin film energy storage device exhibits a better performance.

• 한국항행학회논문지
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• 제17권6호
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• pp.720-725
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• 2013

본 논문은 핑거 (finger) 형 전극에 의해 증강된 가장자리 전계가 가변 캐패시터의 가변성을 개선시킬 수 있음을 보여주고 있다. 가장자리가 긴 전극을 설계하기 위해 면적과 선폭이 다른 finger 형태의 전극들이 설계되었다. 가변 바렉터들은 quartz 기판위에 para/ferro/para의 가변 다층 유전체 박막을 이용하여 제작되었다. 기존의 일반적인 가변 캐패시터와 비교해서, 핑거형 캐패시터들의 유효 용량와 가변성 특성을 분석하였다. 1~2.5 GHz에서 증강된 가장자리 전계로 인해 긴 가장자리 전극으로 설계된 가변 캐패시터의 유효 용량과 가변성이 각각 24~40 % 그리고 7~12 % 증가하였다.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권2호
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• pp.18-22
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Sio$_2$/Si substrate at 4,000 [rpm] for 10 seconds. The structural characteristics of the surface were analyzed by fractal dimension. The thickness of BST ceramics thin films was about 260∼280 [nm]. The property of the leakage current was stable with 10-9∼10-11[A] when the applied voltage was 0∼3[V]. BST thin films ha low leakage current properties when fractal dimension was low and a coating area was high.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.610-615
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• 2022

BaTiO₃ is one of the ferroelectric materials with excellent dielectric properties such as high dielectric constant, low dielectric loss, and is widely used for the manufacturing of capacitors, piezoelectric converters, microsensors, and ferroelectric memories. Inkjet printing is a technology which uses digital and contactless methods which significantly improves flexibility associated with material and structural design, reducing manufacturing costs. Therefore, the top and bottom electrodes, BaTiO₃ ink, and photocurable resin were all printed by an inkjet to produce a BaTiO₃ capacitor. The properties of the printed thin film were analyzed. It was confirmed that the photocurable resin ink was well-infiltrated between the BaTiO₃ powder particles printed by inkjet. The dielectric properties of the capacitor such as dielectric constant which varies in accordance with frequency, polarization and tunability that changes with voltage, were measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집
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• pp.3-5
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• 2008

The $SrBi_2Ta_2O_9$ thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing temperatures were studied. Through the x-ray diffraction analysis and the scanning electron microscopy (SEM), it could be observed that crystallization of the SBT thin film started around $650^{\circ}C$ and complete crystallization was accomplished around $750^{\circ}C$ and grains grew from a small spheric form to rod-like. For the leakage current density of the SBT capacitor depending upon various annealing atmospheres, capacitor annealed in the oxygen atmosphere showed the most excellent characteristic, and they were respectively about $2.13\times10^{-9}[A/cm^2]$ at 5V and 340.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1925-1927
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• 1999

At the study, it has fabricated Al/AlN/GaAs MIS capacitor using DC reactive sputtering method. To applicate GaAs semiconductor in a MIS devices, investigated capability of AIN thin film by the insulator layer. Also it has investigated inversion of C-V characteristics by addition of the hydrogen(hydrogen concentration: 5%) and it has investigated that leakage current has $10^{-8}A/cm^2$ for 1 MV/cm breakdown electric field of I-V characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.87-89
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• 2001

The structure of manufactured device is Cr-Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from -2[V] to +2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• 한국진공학회지
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• 제4권S1호
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• pp.145-150
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• 1995

PZT thin films were fabricated on Pt/Ti/SiO2/Si substrates at $500^{\circ}C$ by ECR-PECVD for the application to the charge storage capacitor of ULSI DRAMs. Perovskite single phase PZT films were obtained by controling the film compositional ratio Pb/(Zr+Ti) close to 1. The anion concentrations in the PZT films were successfully controlled by adjusting the flow rates of each MO sources. Capacitance of a typical 94 nm thick PZT film prepared at $500^{\circ}C$ in this work was about 5.3 uF/$\textrm{cm}^2$, which corresponds to the equivalent SiO2 thickness of 0.65nm.