• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.44-51
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• 2008

The effects of magnetic powder size on electromagnetic wave absorption characteristics in Fe-6.5Si-0.9Cr(wt%) alloy flakes/polymer composite sheets available for quasi-microwave band have been investigated. The composite sheet including small magnetic flakes with the size less than $26{\mu}m$ exhibited high power loss in the GHz frequency range as compared with the sheets having large alloy flakes of $45{\sim}75{\mu}m$. Moreover, both the complex permeability and the loss factor increased with the decrease in size of the alloy flakes. The large power loss of the sheets containing small magnetic flakes was attributed to the high complex permeability, especially their imaginary part. The high complex permeability of the sheets composed of small flakes was considered to be due to the highly thin shape of the flakes inducing low eddy-current loss.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.130-137
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• 2008

$La_{0.7}Sr_{0.3}MnO_3$ films were deposited on $SiO_2$/Si and Si substrates annealed at $350^{\circ}C$ by rf magnetron sputtering. The oxygen gas flow rates were varied as 0, 40, and 80 sccm. Without post annealing process, $La_{0.7}Sr_{0.3}MnO_3$ thin films on $SiO_2$/Si and Si substrates were polycrystalline with (100), (110), and (200) growth planes. The grain size of $La_{0.7}Sr_{0.3}MnO_3$ thin films was increased with increasing oxygen gas flow rate. The sheet resistance of $La_{0.7}Sr_{0.3}MnO_3$ thin films was decreased with oxygen flow rate due to the increased grain size which induced a reduction of grain boundary. TCR (temperature coefficient of resistance) values of $La_{0.7}Sr_{0.3}MnO_3$ thin films were obtained from -2.0% to -2.2%.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.371-375
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• 2022

Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO₂-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultraviolet-visible spectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 10² Ω/sq, and 0.3991 × 10^-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 10²¹ cm^-3 and 6.627 × 10^-2 cm²V^-1s^-1, respectively, at a substrate temperature of 400 ℃.

• Korean Journal of Materials Research
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• v.19 no.9
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• pp.499-503
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• 2009

Transparent ITO films were deposited on a polycarbonate substrate with RF magnetron sputtering in a pure argon (Ar) and oxygen ($O_2$) gas atmosphere, and then post deposition electro annealed for 20 minutes in a $4{\times}10^{-1}$ Pa vacuum. Electron bombardment with an accelerating voltage of 100 V increased the substrate temperature to $120^{\circ}C$. XRD analysis of the deposited ITO films did not show any diffraction peaks, while electro annealed films indicated the growth of crystallites on the (211), (222), and (400) planes. The sheet resistance of ITO films decreased from 103 to $82{\Omega}/\square$. The optical transmittance of ITO films in the visible wavelength region increased from 85 to 87%. Observation of the work function demonstrated that the electro-annealing increased the work function of ITO films from 4.4 to 4.6 eV. The electro annealed films demonstrated a larger figure of merit of $3.0{\times}10^{-3}{\Omega}^{-1}$ than that of as deposited films. Therefore, the electro annealed films had better optoelectrical performances than as deposited ITO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.379-379
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• 2007

The characteristics of indium-zinc-tin-oxide (IZTO)-Ag-IZTO multilayer grown on a PET substrate were investigated for flexible organic light-emitting diodes. The IZTO-Ag-IZTO (IAI) multilayer anode exhibited a remarkably reduced sheet resistance of 4 ohm/sq and a high transmittance of 84%, despite the very thin thickness of the IZTO (30 nm) layer. In addition, it was shown that electrical and optical properties of IAI anodes are critically dependent on the thickness of the Ag layer, due to the transition of Ag atoms from distinct islands to continuous films at a critical thickness (14 nm). Moreover, the IAI/PET sample showed more stable mechanical properties than an amorphous ITO/PET sample during the bending test due to the existence of a ductile Ag layer. The current density voltage-luminance characteristics of flexible OLEDs fabricated on an IAI/PET substrate was better than those of flexible OLEDs fabricated on an ITO/PET substrate. This indicates that IAI multilayer anodes are promising flexible and transparent electrodes for flexible OLEDs.

• Journal of Surface Science and Engineering
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• v.39 no.1
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• pp.9-12
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• 2006

Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

• Corrosion Science and Technology
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• v.23 no.4
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• pp.302-309
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• 2024

The purpose of this study was to elucidate effects of a thin (tens to hundreds of nanometers) Ni-flash coating layer on hydrogen embrittlement (HE) and liquid metal embrittlement (LME) in ultra-high-strength electrogalvanized steel with a tensile strength of more than 1 GPa. Various experimental and analytical methods, including thermal desorption spectroscopy, slow strain rate testing, resistance spot welding, X-ray diffraction, and metallographic observation, were employed. Results showed that an increase in Ni target amount for flash coating resulted in a decrease in diffusible hydrogen content during electrogalvanizing, resulting in a significant decrease in HE sensitivity. Moreover, a Ni target amount of more than 1000 mg/m² drastically reduced the occurring frequency and average depth of LME. This reduction could be primarily attributed to formation of Zn-Ni intermetallic phases during the welding process that could inhibit liquefaction of intermetallic phases in the heat-affected zone. This study provides a desirable Ni target amount for Ni-flash coating on ultra-high-strength steels conducted in a continuous galvanizing line or a high-speed batch line to achieve high resistance to both HE and LME.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.31-34
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• 2018

In this study, the feasibility of ZnO/Al/ZnO flexible transparent electrodes for future flexible optoelectronic devices was investigated. All depositions were performed on PET substrates. The thicknesses of the top and bottom ZnO layers were 5-70 nm and 2.5-20 nm, respectively. The highest visible light transmittance was recorded when the thicknesses of the top and bottom ZnO layers 30 nm and 2.5 nm, respectively. 62% optical transmittance (at the wavelength of 400 nm) and sheet resistance of $19{\Omega}/{\Box}$ were measured. After repetitive bending test at a curvature radius of 5 mm, the transmittance and sheet resistance did not change.