• Title/Summary/Keyword: Thin Sheet

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Effect of Annealing in Nitrogen Atmosphere on the Characteristics of Ga Doped ZnO Films (Ga doped ZnO 박막의 질소분위기 열처리에 따른 특성 변화)

  • Heo, Sung-Bo;Lee, Young-Jin;Lee, Hak-Min;Kim, Sun Kwang;Kim, Yu Sung;Kong, Young Min;Kim, Dae-Il
    • Journal of the Korean Society for Heat Treatment
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    • v.24 no.6
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    • pp.338-342
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    • 2011
  • Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on glass substrate and then the effect of post deposition annealing at nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes at different temperature of 150, 300 and $450^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $450^{\circ}C$ have the highest optoelectrical performance in this study.

The Effect of electron beam surface irradiation on the properties of SnO2/Ag/SnO2 thin films (전자빔 표면 조사에 따른 SnO2/Ag/SnO2 박막의 특성 연구)

  • Jang, Jin-Kyu;Kim, Hyun-Jin;Choi, Jae-Wook;Lee, Yeon-Hak;Kong, Young-Min;Heo, Sung-Bo;Kim, Yu-Sung;Kim, Daeil
    • Journal of Surface Science and Engineering
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    • v.54 no.6
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    • pp.302-306
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    • 2021
  • SnO2 30/Ag 15/SnO2 30 nm(SAS) tri-layer films were deposited on the glass substrates with RF and DC magnetron sputtering and then electron beam is irradiated on the surface to investigate the effect of electron bombardment on the opto-electrical performance of the films. electron beam irradiated tri-layer films at 1000 eV show a higher figure of merit of 2.72×10-3 Ω-1 than the as deposited films due to a high visible light transmittance of 72.1% and a low sheet resistance of 14.0 Ω/☐, respectively. From the observed results, it is concluded that the post-deposition electron irradiated SnO2 30/Ag 15/SnO2 30 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications.

Welding Strength in the Ultrasonic Welding of Multi-layer Metal Sheets for Lithium-Ion Batteries (리튬이온 배터리용 다층박판 금속의 초음파 용착시 용착강도)

  • Kim, Jin-Bom;Seo, Ji-Won;Park, Dong-Sam
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.20 no.6
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    • pp.100-107
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    • 2021
  • As a significant technology in the smartization era promoted by the Fourth Industrial Revolution, the secondary battery industry has recently attracted significant attention. The demand for lithium-ion batteries (LIBs), which exhibit excellent performance, is considerably increasing in different industrial fields. During the manufacturing process of LIBs, it is necessary to join the cathode and anode sheets with thicknesses of several tens of micrometers to lead taps of the cathode and anode with thicknesses of several hundreds of micrometers. Ultrasonic welding exhibits excellent bonding when bonded with very thin plates, such as negative and positive electrodes of LIBs, and dissimilar and highly conductive materials. In addition, ultrasonic welding has a small heat-affected zone. In LIBs, Cu is mainly used as the negative electrode sheet, whereas Cu or Ni is used as the negative electrode tab. In this study, one or two electrode sheets (t0.025 mm Cu) were welded to one lead tab (t0.1 mm Cu). The welding energy and pressure were used as welding parameters to determine the welding strength of the interface between two or three welded materials. Finally, the effects of these welding parameters on the welding strength were investigated.

Property of Nano-thick Silicon Films Fabricated by Low Temperature Inductively Coupled Plasma Chemical Vapor Deposition Process (저온 ICP-CVD 공정으로 제조된 나노급 실리콘 박막의 물성)

  • Shen, Yun;Sim, Gapseop;Choi, Yongyoon;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.49 no.4
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    • pp.313-320
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    • 2011
  • 100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

Optically Transparent ITO Film and the Fabrication of Plasma Signboard (투명 전극 ITO 박막의 열처리 영향과 플라즈마 응용 표시소자 제작에 관한 연구)

  • Jo, Young Je;Kim, Jae-Kwan;Han, Seung-Cheol;Kwak, Joon-Seop;Lee, Ji-Myon
    • Korean Journal of Metals and Materials
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    • v.47 no.1
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    • pp.44-49
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    • 2009
  • Indium tin oxide(ITO) thin films were deposited on the glass substrates by radio-frequency (RF) magnetron sputtering method. The influence of rapid thermal annealing (RTA) treatment on the optical and electrical properties of the films were investigated for the purpose of fabricating plasma display signboard. Structural properties, surface roughness, sheet resistance and transmittance of the ITO film were analysed by using x-ray diffraction method, atomic force microscopy (AFM), four point prove, and ultraviolet-visible spectrometer, respectively. It was found that the RTA treatment increased the transmittance and decreased the resistivity of the ITO film, respectively. Furthermore, we successfully demonstrated the direct-current plasma signboard by using ITO electrode and phosphors.

Flour Characteristics and End-Use Quality of Korean Wheat Cultivars II. End-use Properties (국산밀 품종의 밀가루 특성과 가공적성 II. 가공 적성평가)

  • Kang, Chon-Sik;Park, Chul Soo;Park, Jong-Chul;Kim, Hag-Sin;Cheong, Young-Keun;Kim, Kyung-Ho;Kim, Ki-Jong;Park, Ki-Hoon;Kim, Jung-Gon
    • Korean Journal of Breeding Science
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    • v.42 no.1
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    • pp.75-86
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    • 2010
  • End-use properties of 26 Korean wheat cultivars (KWC) were evaluated to assess consumer satisfaction with 6 imported wheat and 5 commercial wheat flours. In end-use quality testing of cooked noodles, Absorption of noodle dough sheet of ASW (Australian standard white) was similar to Anbaek, Eunpa, Gobun, Hanbaek, Jeokjoong, Jonong, Namhae, and Sukang. Thickness of noodle dough sheet of KWC was showed thin difference. In imported wheat and commercial flour, Commercial flour for baking cookie (Com5) with lower protein flour was lower than those flours. In lightness of prepared noodle dough sheet, Lightness value ($L^*$) of KWC was lower than those of Commercial flour for making white salted noodle (Com1), commercial flour for making for yellow alkaline noodle (Com2), and commercial flour for multi-purpose (Com4). Lightness value ($L^*$) showed significantly negative correlations with particle size of flour, ash, damaged starch, and protein content. Hardness of cooked noodles positively correlated with protein content. In texture of cooked noodles, Hardness of Com1 was similar to that of Alchan, Dahong, Jeokjoon, and Sukang. Also, hardness of Com2 was similar to that of Gobun, Jokyung, Jonong, Keumkang, and Namhae. In end-use quality of bread, bread loaf volume of commercial flour for making bread (Com3) was similar to Alchan, Jokyung, Keumkang, and Namhae but firmness was low. Bread volume showed better relationships with higher SDS-sedimentation volume, longer mixing time of mixograph, higher height of dough during development. Firmness of crumb was negatively correlated with bread volume. Diameter of cookie showed significantly negative correlations with particle size of flour, damaged starch, and protein content. Also, Top gain score became higher as the increase diameter of cookie. In end-use quality testing of cooked cookie, Cookie diameter of Com5 was similar to that of Dahong, Geuru, Olgeuru, Tapdong, and Uri but top grain was low.

A study of beam hardening effect reduction occur in brain CT (Brain CT에서 발생하는 선속경화현상 감소방안에 관한 연구)

  • Kim, Hyeon-ju
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.12
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    • pp.8479-8486
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    • 2015
  • This study aim is occur in brain CT cause of beam hardening effect and reducing method, We will scan Bone opaque bead phantom on variation of image on the influence factor with equipment called 'Samatom Senation 16' with following listed herein : tube voltage, tube current, slice thickness, gantry angle, base line which affect beam-hardening effect. After that we are going to start Quantitative Analysis resulted in previous scanning and Qualitative Assessment with CT image sheet evaluation. result of quantitative analysis 140kVp $31.56{\pm}2.89HU$ on tube voltage, 150mA $-3.87{\pm}0.12HU$ on tube current, 3mm on slice thickness, and $13.31{\pm}1.03HU$ IOML on gantry angle which was the least beam-hardening effect. Like Qualitative Analysis, we went through Qualitative Assessment and most of valuers got a result of 140kVp on tube voltage, 150mA on tube current, 3mm on slice thickness. As before valuers evaluated gantry angle that scanned image from IOML or OML was the least beam-hardening effect occured. There are meaningful differences when we compare all theses factors statistically(P<0.05). therefore We consider that Minimizing artifact that caused by beam-hardening effect can provide better quality of image to deciphers and patients. if we rise tube voltage in permissible dose limit, set tube current in a limit that does not effect to image quality, use slice thickness too thin enough to harm resolution, use IOML or OML on gantry angle.

Design and characterization of conductive transparent filter using [TiO2|Ti|Ag|TiO2] multilayer ([TiO2|Ti|Ag|TiO2] 다층구조를 이용한 전도성 투과필터의 설계 및 특성분석)

  • Lee, Seung-Hyu;Lee, Jang-Hoon;Hwangbo, Chang-Kwon
    • Korean Journal of Optics and Photonics
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    • v.13 no.4
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    • pp.363-369
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    • 2002
  • We have designed conductive transparent filters using a low-emissivity coating such as [dielectric|Ag|dielectric] for display applications. The design is the repetition of [$TiO_{2}$|Ti|Ag |$TiO_{2}$] to increase the transmittance in the visible and decrease the transmittance in the near IR. The conductive transparent filters are deposited by a radio frequency(RF) magnetron sputtering system. The optical, structural and electrical properties of the filters were investigated and the optical spectra are compared with simulated spectra. The thickness of the deposited Ag films is above 13 ㎚ to increase the conductivity and that of $TiO_{2}$ films is 24 ㎚ to increase the transmittance in the visible range. Ti blockers are employed to prevent the Ag films from being oxidized by an oxygen gas during the reactive sputtering process. Also, it is shown that the thicker Ti film is necessary as the period increases. Finally, a filter with repetition of the basic structure three times shows the better cut-off near infrared(NIR) and the sheet resistance as low as 2Ω/□ which is enough to shield an unnecessary electromagnetic waves for a display panel.

Three-dimensional Cross-hole EM Modeling using the Extended Born Approximation (확장 Born 근사에 의한 시추공간 3차원 전자탐사 모델링)

  • Lee, Seong-Kon;Kim, Hee-Joon;Suh, Jung-Hee
    • Geophysics and Geophysical Exploration
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    • v.2 no.2
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    • pp.86-95
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    • 1999
  • This paper presents an efficient three-dimensional (3-D) modeling algorithm using the extended approximation to an electric field integral equation. Numerical evaluations of Green's tensor integral are performed in the spatial wavenumber domain. This approach makes it possible to reduce computing time, to handle smoothly varying conductivity model and to remove singularity problems encountered in the integration of Green's tensor at a source point. The responses obtained by 3-D modeling algorithm developed in this study are compared with those by the full integral equation for a thin-sheet EM scattering. The extensive analyses on the performance of modeling algorithm are made with the conductivity contrasts and source frequencies. These results show that the modeling algorithm are accurate up to the conductivity contrast of 1:16 and the frequency range of 100 Hz-100 kHz. The extended Born approximation, however, may produce inaccurate results for some source and model configurations in which the electric field is discontinuous across the conductivity boundary. We performed the modeling of a composite model of which conductivity varies continuously and this shows the modeling algorithm developed in this study is efficient for 3-D EM modeling. For a cross-hole source-receiver configuration a composite model of which conductivity varies continuously can be successfully simulated using this algorithm.

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A Printing Process for Source/Drain Electrodes of OTFT Array by using Surface Energy Difference of PVP (Poly 4-vinylphenol) Gate Dielectric (PVP(Poly 4-vinylphenol) 게이트 유전체의 표면에너지 차이를 이용한 유기박막트랜지스터 어레이의 소스/드레인 전극 인쇄공정)

  • Choi, Jae-Cheol;Song, Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.3
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    • pp.7-11
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    • 2011
  • In this paper, we proposed a simple and high-yield printing process for source and drain electrodes of organic thin film transistor (OTFT). The surface energy of PVP (poly 4-vinylphenol) gate dielectric was decreased from 56 $mJ/m^2$ to 45 $mJ/m^2$ by adding fluoride of 3000ppm into it. Meanwhile the surface energy of source and drain (S/D) electrodes area on the PVP was increased to 87 $mJ/m^2$ by treating the areas, which was patterned by photolithography, with oxygen plasma, maximizing the surface energy difference from the other areas. A conductive polymer, G-PEDOT:PSS, was deposited on the S/D electrode areas by brushing painting process. With such a simple process we could obtain a high yield of above 90 % in $16{\times}16$ arrays of OTFTs. The performance of OTFTs with the fluoride-added PVP was similar to that of OTFTs with the ordinary PVP without fluoride, generating the mobility of 0.1 $cm^2/V.sec$, which was sufficient enough to drive electrophoretic display (EPD) sheet. The EPD panel employing the OTFT-backpane successfully demonstrated to display some patterns on it.