• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.213-214
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• 2009

A thin film hydroxyapatite (HA) films was deposited on anodized titanium by RF sputtering method. The anodized titanium enhanced the biocompatibility of the Ti and the bioactivity was improved further by the HA deposited on the anodized Ti. $TiO_2$ layer with $0.2{\sim}0.5{\mu}$ diameter pore size was formed on the Ti surface by anodization. Anodized $TiO_2$ layer analysis HA film deposited, oxide pore size and number decreased compared with non-HA deposited surface. The corrosion resistance of HA deposited/anodized Ti was higher than that of the non-treatment Ti alloy in Hank's solution, indicating better protective effect. From the results of cell culture using MTT assays, the best cell proliferation showed in HA deposited surface after anodization of Ti surfaces compared with another surface treatment.

• 한국정보통신학회논문지
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• 제12권12호
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• pp.2247-2252
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• 2008

탄소 주입실리콘 산화막으로서 SiOC 박막은 화학적 증착 방법에 의해 성막되었으며, 박막의 분석기법으로 FTIR 분석기와 I-V 측정과 표면분석으로 전자현미경을 이용하였다. 증착된 샘플들은 유량비의 변화에 따라서 화학적 이동현상이 나타났으며, 표면에서의 그레인은 유기물 특성과 무기물 특성의 SiOC 박막샘플에서 나타났다. 그러나 하이브리드 특성의 박막에서는 그레인이 형성되지 않았다. 하이브리드 특성의 박막샘플에서 온도가 증가할수록 누설전류는 감소하였다. 누설전류는 온도가 증가함에 따라 감소하였는데 전위장벽이 증가하기 때문에 감소하는 것으로 나타났다.

• Bulletin of the Korean Chemical Society
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• 제22권7호
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• pp.709-715
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• 2001

We have been studied photosensitization mechanism's additive effect, of perylene 3,4,9,10-tetracarboxyl-diimide and X-phthalocyanine (charge generation materials), using the photochemical and photoelectrochemical approach. It was found that the photoreceptor on the excited state reacts with metal oxide, which creates the charge transfer on the interface of SnO2/electrolyte. In the electrode (X5P1) made of five X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, the cathodic photocurrent of X-phthalocyanine in the 400-600 nm region was increased by the addition of perylene 3,4,9,10-tetracarboxyldiimide. The maximum wavelength of fluorescence of perylene 3,4,9,10-tetracarboxyldiimide showed no dependence on the temperature. The addition of 4-dibenzylamino-2-methylbenzaldehyde diphenylhydrazone known as charge transport material was represented as decreasing photocurrent for X-phthalocyanine and perylene 3,4,9,10-tetracarboxyldiimide, respectively. In the electrode (X1P1) made of single X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, an anodic photocurrent of about 10.5 nA was generated by addition of hydroquinone at 550 nm. And the characteristic of photoinduced discharge was shown to decrease by a factor of 5 and the speed of dark decay was increased by a factor of 1.2.

• Bulletin of the Korean Chemical Society
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• 제19권8호
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• pp.830-835
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• 1998

The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

• Advances in Energy Research
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• 제3권2호
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• pp.117-124
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• 2015

In this paper, we have reported an enhancement in thermoelectric properties of un-doped zinc oxide (ZnO) grown by molecular beam epitaxy (MBE) on silicon (001) substrate by annealing treatment. The grown ZnO thin films were annealed in oxygen environment at $500^{\circ}C-800^{\circ}C$, keeping a step of $100^{\circ}C$ for one hour. Room temperature Seekbeck measurements showed that Seebeck coefficient and power factor increased from 222 to $510{\mu}V/K$ and $8.8{\times}10^{-6}$ to $2.6{\times}10^{-4}Wm^{-1}K^{-2}$ as annealing temperature increased from 500 to $800^{\circ}C$ respectively. This observation was related with the improvement of crystal structure of grown films with annealing temperature. X-ray diffraction (XRD) results demonstrated that full width half maximum (FWHM) of ZnO (002) plane decreased and crystalline size increased as the annealing temperature increased. Photoluminescence study revealed that the intensity of band edge emission increased and defect emission decreased as annealing temperature increased because the density of oxygen vacancy related donor defects decreased with annealing temperature. This argument was further justified by the Hall measurements which showed a decreasing trend of carrier concentration with annealing temperature.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.100-104
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• 2019

The 'ITO/Ag/ITO' multilayers as a highly conductive and transparent electrode, even with the optimum thickness conditions, the transmittances were much lower than those of a single ITO layer on some ranges of the visible wavelength. In order to improve the transmittance, Ag layer was formed with mesh structure. Where, the thickness of the Ag layer was about 10 nm and the space between the Ag lines was varied from 2.9 ㎛ to 19.6 ㎛ with the fixed Ag width of about 1.2 ㎛ in order to vary an open ratio of the Ag mesh structure. The transmittance and sheet resistance in the ITO/Mesh-Ag/ITO multilayer structure were analyzed depending on the open ratio. As a result, a trade off in the open ratio was necessary in order to obtain the transmittance as high as possible and the sheet resistance as possible low. By the open ratio of about 86%, in the ITO/Mesh-Ag/ITO multilayer structure, the transmittance was nearly same as the single ITO layer and the sheet resistance was about 62.3 Ω/.

• Safety and Health at Work
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• 제12권3호
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• pp.403-415
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• 2021

Background: This study aimed to assess the possibility of benzene exposure in workers of a Korean semiconductor manufacturing company by reviewing the issued patents. Methods: A systematic patent search was conducted with the Google "Advanced Patent Search" engine using the keywords "semiconductor" and "benzene" combined with all of the words accessed on January 24, 2016. Results: As a result of the search, we reviewed 75 patent documents filed by a Korean semiconductor manufacturing company from 1994 to 2010. From 22 patents, we found that benzene could have been used as one of the carbon sources in chemical vapor deposition for capacitor; as diamond-like carbon for solar cell, graphene formation, or etching for transition metal thin film; and as a solvent for dielectric film, silicon oxide layer, nanomaterials, photoresist, rise for immersion lithography, electrophotography, and quantum dot ink. Conclusion: Considering the date of patent filing, it is possible that workers in the chemical vapor deposition, immersion lithography, and graphene formation processes could be exposed to benzene from 1996 to 2010.

• 한국재료학회지
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• 제29권4호
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• pp.228-232
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• 2019

Copper electroplating and electrode patterning using a screen printer are applied instead of lithography for heterostructure with intrinsic thin layer(HIT) silicon solar cells. Samples are patterned on an indium tin oxide(ITO) layer using polymer resist printing. After polymer resist patterning, a Ni seed layer is deposited by sputtering. A Cu electrode is electroplated in a Cu bath consisting of $Cu_2SO_4$ and $H_2SO_4$ at a current density of $10mA/cm^2$. Copper electroplating electrodes using a screen printer are successfully implemented to a line width of about $80{\mu}m$. The contact resistance of the copper electrode is $0.89m{\Omega}{\cdot}cm^2$, measured using the transmission line method(TLM), and the sheet resistance of the copper electrode and ITO are $1{\Omega}/{\square}$ and $40{\Omega}/{\square}$, respectively. In this paper, a screen printer is used to form a solar cell electrode pattern, and a copper electrode is formed by electroplating instead of using a silver electrode to fabricate an efficient solar cell electrode at low cost.

• 한국재료학회지
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• 제31권10호
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• pp.569-575
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• 2021

The reactivity evaluation of copper is performed using ethylenediamine, aminoethanol, and piperidine to apply organic chelators to copper etching. It is revealed that piperidine, which is a ring-type chelator, has the lowest reactivity on copper and copper oxide and ethylenediamine, which is a chain-type chelator, has the highest reactivity via inductively coupled plasma-mass spectroscopy (ICP-MS). Furthermore, it is confirmed that the stable complex of copper-ethylenediamine can be formed during the reaction between copper and ethylenediamine using nuclear magnetic resonance (NMR) and radio-thin layer chromatography. As a final evaluation, the copper reactivity is evaluated by wet etching using each solution. Scanning electron micrographs reveal that the degree of copper reaction in ethylenediamine is stronger than that in any other chelator. This result is in good agreement with the evaluation results obtained by ICP-MS and NMR. It is concluded that ethylenediamine is a prospective etch gas for the dry etching of the copper.

• 센서학회지
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• 제30권1호
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• pp.51-55
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• 2021

We demonstrated a polymer dielectric with low leakage characteristics through an optimal blade coating method for low-cost and large-scale fabrication of metal-insulator-metal (MIM) capacitors. Cross-linked poly(4-vinylphenol) (C-PVP), which is a typically used polymer dielectric, was coated on a 10 × 10 cm indium-tin-oxide (ITO) deposited glass substrate by changing the deposition temperature (TD) and coating velocity (VC) in the blade coating. During the blade coating, the thickness of the thin c-PVP varied depending on TD and VC owing to the 'Landau-Levich (LL) regime'. The c-PVP-dielectric-based MIM capacitor fabricated in this study showed the lowest leakage current characteristics (10-6 A/㎠ at 1.2 MV/㎠, annealing at 200 ℃) and uniform electrical characteristics when TD was 30 ℃ and VC was 5 mm/s. In addition, at TD = 30 ℃, stable leakage characteristics were confirmed when a different electric field was applied. These results are expected to positively contribute to applications with next-generation electronic devices.