• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.12-16
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• 2002

It is confirmed that the ITO(Indium Tin Oxide) thin films can be etched by low-temperature plasma at atmospheric pressure. The etching happened deepest at a hydrogen flow rate of 4 sccm, and the etch rate was 120 /min. The etching speed corresponded to the H$\alpha$* emission intensity The etching mechanism of the ITO thin films is as follows; thin films were reduced by H$\alpha$*, and the metal compound residues were detached from the substrate by reacting on the CH* The etching was started after etching time of initial 50 sec and above the threshold temperature of 145$^{\circ}C$. The activation energy of 0.16 eV(3.75 Kcal/mole) was obtained from the Arrehenius plots.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.313-318
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• 2007

ITO (Indium-tin oxide) thin films have been prepared by a sol-gel spinning coating method and fired and annealed in the temperature range of $450-600^{\circ}C$. The XRD patterns of the films indicated the main peak of (222) plane and showed higher crystallinity with increasing an annealing temperature. The surface of the ITO thin films were treated with 0.1 N HCl 20% solution at room temperature. The effects of surface treatment on electrical properties and surface morphologies of the ITO films were investigated with the results of sheet resistance and FE-SEM, AFM images. The samples, subsequently treated with acidic solution for 40 sec showed the sheet resistance of $0.982\;k{\Omega}/square$. The surface treatment using acidic solution diminished the RMS (root mean square) value and the residual carbon content of the ITO films. It seemed that the acid-cleaning of the ITO thin films lead to the decrease of surface roughness and sheet resistance.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.29-34
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• 2008

In this paper, the DE(double erosion) cathode for the reactive magnetron sputtering system is developed for high deposition rate and high target utilization efficiency. The utilization efficiency of the developed DE cathode is 22% higher than that of normal SE(single erosion) cathode. Sputtering process for the nickel oxide thin films with the DE cathode is performed under the following conditions; power with $1kW{\sim}3kW$, pressure with 4mtorr and 8mtorr, oxygen flow ratio with $0%{\sim}80%$. As a result, the hysteresis phenomenon of discharge voltage in 4mtorr is lower than that in 8mtorr and the hysteresis phenomenon of discharge voltage is getting lower as the applied power is getting higher. The structure of cross section and surface roughness of the thin films are observed by FE-SEM and AFM. The structure of cross section of the thin films is columnar and the average surface roughness under oxygen flow ratio of 0%, 52.5% and 65.0% are $2.08{\AA}$, $2.20{\AA}$ and $0.854{\AA}$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.373-373
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• 2012

We fabricated conductive zinc oxide (ZnO) thin film at low temperature by UV-enhanced atomic layer deposition. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In this experiment, diethylzinc (DEZ) and $H_2O$ were used as precursors with UV light. The UV light was very effective to improve the conductivity of the ZnO thin film. The thickness, transparency and resistivity were investigated by ellisometry, UV-visible spectroscopy and Four-point probe.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1334-1338
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• 2006

In this work, indium tin oxide (ITO) thin film was fabricated by indium-tin-organic sol including ITO nanoparticle. ITO nanoparticle showed ultrafine size about 5 nm and (222) preferred crystal structure. Also, ITO sol-gel thin film showed good optical transmittance over 83% and electrical resistance less than $7\;{\times}\;10^3\;{\Omega}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.259-264
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• 2000

Systematic research of metal alkoxide electrophoretic deposition has been developed. The formation mechanism of electrophoretic deposits has been offered. The structure study of dry and heat-treated electrophoretic deposits has been established. The concrete examples of one and bi-component oxide thin film formation were considered. The new approaches for thin film technology have developed on various substrates of different shapes and sizes. The correlation between thin film structure, mechanism of their formation, and physico-chemical properties has been determined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.9-16
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• 2000

A survey over the role of sol-gel processing and metal alkoxides in the thin film preparation is given. The basic chemistry of the sol-gel process is complex due to the different reactivities of the network forming and the wide variety of reaction parameters. Despite the important progress in the investigations of the mechanisms of thin film formation, a direct relation of reaction parameters to functional oxide properties is still very difficult.

• Journal of the Korean Ceramic Society
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• v.13 no.2
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• pp.8-16
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• 1976

The conductive transparent film is prepared by spraying thin salt solution. In stannic chloride solution as a base solution, various dopants such as Al, Co, Cu and Ni were dissolved respectively as a chloride state and then the films were made by spraying solutions on hot glass plates. The properties of them were compared with those of the stannic salt single component film. The films doped with copper oxide and nickle oxide were improved by decreasing their sheet resistivity and temperature coefficient of resistivity. In comparison with the sheet resistivity and temperature coefficient of resistivity of stannic oxide single component film, being 2.5 K ohm/$\textrm{cm}^2$ and -1650ppm/$^{\circ}C$ respectively, its values of the film containing 15 mol % of copper oxide and formed at 40$0^{\circ}C$ were 2.5K ohm/$\textrm{cm}^2$ and -920ppm/$^{\circ}C$ respectively. The film containing 15 mol % of nickel oxide and formed at 50$0^{\circ}C$ has shown its sheet resistivity and temperature coefficient 0.7 K ohm/$\textrm{cm}^2$ and -940ppm/$^{\circ}C$ respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.601-608
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• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.