• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제29회 학술발표회 초록집
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• pp.139-139
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• 2005

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.703-706
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• 2006

Zinc oxide nanocrystals are attractive candidates for a solution-processable semiconductor for high performance thin film field effect transistors. We have studied ZnO thin film transistor fabricated by solution process and have improved $V_{th}$ by controlling the ZnO ink additives. Synthesized ZnO nanoparticles of 30nm were dispersed in solvent to make the ZnO ink. ZnO ink was spin coated on silicon wafer and after heat treatment electrodes were patterned.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.96-99
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• 1993

대면적 액정 표시판 (Liquid Crystal Display:LCD) panel내(內)의 구동소자인 비정질 실리콘 (amorphous silicon) 박막 트랜지스터 (Thin Film Transistor:TFT)의 구동신호전달 소자특성 향상을 위한 본(本) 연구의 목적은 액정 panel TFT 제조공정 상(上)의 증착금속 전극박막들의 Test Elements Group(TEG) metal line pattern별(別) 전기적 저항특성 평가에 있다. 현(現) TFT 전극용(用)으로 개발이 진행 중(中)인 Aluminum(Al), Tantalum(Ta) 및 Chromium(Cr) 이 특성평가 대상 금속 박막으로 선정 되었으며, 이들 금속막의 증착 thickness 와 TEG metal line width가 저항특성 변수로 성립 되었다. 본(本) 실험을 통해 금속 박막의 TEG line width별(別) 체적(體積)저항 (bulk resistance), 면(面)저항(sheet resistance), 비(比)저항 (resistivity) 및 기판 상(上)의 metal pattern 위치 변화에 따른 전기적 저항 uniformity 특성변화 평가가 있었다. TEG metal line 측정 변위에 따른 저항율의 선형변화 특성도 연구 되었으며, metal line별(別) 전기적 연속, 불연속 배선 단락 특성(electrical continuity test) 관찰도 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.271-272
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• 2008

We fabricated a pentacene thin-film transistor with Ni/Ag source/drain electrodes. Also, we obtained similar electrical characteristics as compared with source/drain electrode with Au. This device was found to have a field-effect mobility of about 0.021 $cm^2$/Vs, a threshold voltage of -5, -7 V, an subthreshold slope of 2.0, 4.5 V/decade, and an on!off current ratio of $3.6\times10^5$, $2.0\times10^6$.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.82-86
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• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.155-158
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• 2007

Printed organic thin-film transistor(OTFT) to use as a switching device for an organic light emitting diode(OLED) were fabricated in the microcontact printing and direct printing processes at room temperature. The gate electrodes($5{\mu}m$, $10{\mu}m$, and $20{\mu}m$) of OTFT was fabricated using microcontact printing process, and source/drain electrodes ($W/L=500{\mu}m/5{\mu}m$, $500{\mu}m/10{\mu}m$, and $500{\mu}m/20{\mu}m$) was fabricated using direct printing process with hard poly(dimethylsiloxane)(h-PDMS) stamp. Printed OTFT with dielectric layer was formed using special coating system and organic semiconductor layer was ink-jet printing process. Microcontact printing and direct printing processes using h-PDMS stamp made it possible to fabricate printed OTFT with channel lengths down to $5{\mu}m$, and reduced the process by 20 steps compared with photolithography. As results of measuring he transfer characteristics and output characteristics of OTFT fabricated with the printing process, the field effect characteristic was verified.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.597-600
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• 2006

The silver gate and source/drain electrodes for an a-Si thin film transistor were fabricated by the selective electroless plating (SELP) process. Relevant physical properties including taper angle, uniformity and resistivity are investigated. The Ag layer was about 150nm to 250nm thick, the resistivity less than $3{\times}10^{-6}$ Ohm-cm and the taper angle 45'-60' and the nonuniformity less than 10% on G2 substrates. The transfer characteristics with the Ag gate, and source/drain electrodes respectively possessed good field effect mobility similar to conventionally fabricated a-Si TFTs. This process provided low resistivity, low cost and ease of processing.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1463-1465
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• 2008

We report all-ink-jet printed inorganic/organic hybrid TFTs on plastic substrates. We have investigated the optimal printing conditions to make uniform patterned layers of gate electrode, dielectrics, source/drain electrodes, and semiconductor as a coplanar type TFT in a successive manner. All ink-jet printed devices have good mechanical flexibility and current modulation characteristic even when bent.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.276-276
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• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• 센서학회지
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• 제16권4호
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• pp.313-318
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• 2007

Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.