• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.195-201
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• 1999

C-axis oriented $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown on $Al_2O_3$ (alumina and R-plane sapphire) substrates by a pulsed laser deposition method. The crystallinity of the $CeO_2$ buffer layer on sapphire substrate exhibit a strong dependence on the deposition temperature, resulting in the growth of a-axis orientation at $800^{\circ}C$. The superconducting properties of YBCO thin films on $Al_2O_3$ substrates showed strong dependence on both thickness and crystallinity of the $CeO_2$ buffer layer. Critical temperature of YBCO film on alumina substrate was ${\sim}83\;K$. In the case of R-plane sapphire substrate,

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.67-75
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• 2005

For th aim of lightweight microwave absorbers, conductive and magnetic microspheres are fabricated by plating of Co films on hollow ceramic microspheres of low density. Metal plating was carried out in a two-step electroless plating process (pre-treatment of activation and plating). Uniform coating of the film with about $2{\~}3{\cal}um$ thickness was identified by SEM. High-frequency magnetic and microwave absorbing properties were determined in the rubber composites containing the Co-coated microspheres. Due to conductive and ferromagnetic behavior of the Co thin films, high dielectric constant and magnetic loss can be obtained in the microwave frequencies. Due to those electromagnetic properties, high absorption rate (25 dB) and thin matching thickness ($2.0{\~}2.5{\cal}mm$) are predicted in the composite layers containing the metal-coated microspheres of low density (about 0.84 g/cc) for the electromagnetic radiation in microwave frequencies.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.274-281
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• 1999

Usually sputtering and electroless plating methods were used for manufacturing metal-alloy thin film magnetic memory devices. Since electroless plating method has many merits in mass production and product variety com­pared to sputtering method, many researches about electroless plating have been performed in the United State of America and Japan. However, electroless plating method has not been studied frequently in Korea. In these respects the purpose of this research is manufacturing Co-Mn-P alloy thin film on the corning glass 2948 by electroless plating method using sodium hypophosphite as a reductant, and analyzing deposition rate, alloy composition, microstructure, and magnetic characteristics at various pH's and temperatures. For Co-P alloy thin film, the reductive deposition reaction 0$\alpha$urred only in basic condition, not in acidic condition. The deposition rate increased as the pH and temperature increased, and the optimum condition was found at the pH of 10 and the temperature of $80^{\circ}C$. Also magnetic charac­teristics was found to be most excellent at the pH of 9 and the temperature of $70^{\circ}C$, resulting in the coercive force of 8700e and the squareness of 0.78. At this condition, the contents of P was 2.54% and the thickness of the film was $0.216\mu\textrm{m}$. For crystal orientation, we could not observe fcc for $\beta$-Co. On the other hand,(1010), (0002), (1011) orientation of hcp for a-Co was observed. We could confirm the formation of longitudinal magnetization from dominant (1010) and (1011) orientation of Co-P alloy. For Co-Mn-P alloy deposition, coercive force was about 1000e more than that of Co P alloy, but squareness had no difference. For crystal orientation, (l01O) and (lOll) orientation of $\alpha$-Co was dominant as same as that of Co- P alloy. Likewise we could confirm the formation of longitudinal magnetization.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.49 no.1
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• pp.67-74
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• 2023

In this study, for a natural cosmetics market, we sought to explore alternatives that can replace polyvinyl alcohol (PVA) of peel-off packs. A peel-off type pack was prepared by combining pullulan, a water-soluble polysaccharide, and other polysaccharides (sodium hyaluronate, cellulose gum, hydroxyethyl cellulose, sodium alginate, corn starch), and the pH, viscosity, and stability against temperature of each peel-off type pack were confirmed. The thickness and tensile strength of the manufactured film were measured for comparison with the PVA peel-off type pack, and applicability, drying speed, and removal degree were measured. Among them, the pullulan-sodium hyaluronate peel-off type pack showed excellent film formation ability to replace the peel-off type pack containing PVA with 5.12% thin film thickness and 4.23% high film tensile strength. When applied to actual skin, the degree of spread of the pack, the usability that can be uniformly applied, and the formation and removal strength of the film when removed after drying were also similar to the peel-off type pack containing PVA. Therefore, it was confirmed that the film formed of pullulan-sodium hyaluronate showed enough physical properties to replace the PVA of the peel-off type pack as a natural peel-off type pack.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• Korean Journal of Environmental Agriculture
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• v.8 no.2
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• pp.142-147
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• 1989

In this report, we set up a simple device which enabled us to obtain data useful to estimate the relative capacity of thermal energy retention of greenhouse built with various plastic coverings. A box($20cm{\times}20cm{\times}30cm$) framed with flexiglass at the edges and covered with thin plastic films was made, in which were placed a thermostat-controlled nichrom wire heater and a thermal probe made of thermister to monitor temperature changes. A wheaston-bridge type transducer and a chart recorder were used to record the changes of temperature inside the box The data obtained by using the device showed that the relative rate of heat toss through plastic films with identical thickness decreased in the order of PE film>EVA film>PVC film and that IR additives such as fine silica gel improved the insulating power of plastic films. This observations are in well accord with general information, demostrating the feasibility of the device in usefulness for the purpose of screening of various commercial plastic coverings.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.17-25
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• 1999

Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.575-579
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• 2001

GaN buffer layer and epilayer have been grown on sapphire (0001) by metal organic chemical vapor deposition (MOCVD). GaN buffer layer ranging from 26 nm to 130 nm in thickness was grown at 55$0^{\circ}C$ prior to the 4 $\mu\textrm{m}$ thick GaN epitaxial deposition at 110$0^{\circ}C$. After GaN buffer layer growth, buffer layer surface was examined by atomic force microscopy (AFM). As the thickness of GaN buffer layer was increased, surface morphology of GaN epilayer was investigated by scanning electron microscopy (SEM). Double crystal X-ray diffraction (DCXRD) and Raman spectroscopy were employed to study crystallinity of GaN epilayers. Optical properties of GaN epilayers were measured by photoluminescence (PL). The epilayer grown with a thin buffer layer had rough surface, and the epilayer grown with a thick buffer layer had mirror-like surface of epilayer. Although the stress on the latter was larger than on the former, its crystallinity was much better. These results imply that the internal free energy is decreased in case of the thick buffer layer. Decrease in internal free energy promotes the lateral growth of the GaN film, which results in the smoother surface and better crystallinity.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.113-119
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• 2022

In order to improve the mechanical reliability of next-generation electronic devices including flexible, wearable devices, a high level of mechanical reliability is required at various flexible joints. Organic adhesive materials such as epoxy for bonding existing polymer substrates inevitably have an increase in the thickness of the joint and involve problems of thermodynamic damage due to repeated deformation and high temperature hardening. Therefore, it is required to develop a low-temperature bonding process to minimize the thickness of the joint and prevent thermal damage for flexible bonding. This study developed flexible laser transmission welding (f-LTW) that allows bonding of flexible substrates with flexibility, robustness, and low thermal damage. Carbon nanotube (CNT) is thin-film coated on a flexible substrate to reduce the thickness of the joint, and a local melt bonding process on the surface of a polymer substrate by heating a CNT dispersion beam laser has been developed. The laser process conditions were constructed to minimize the thermal damage of the substrate and the mechanism of forming a CNT junction with the polymer substrate. In addition, lap shear adhesion test, peel test, and repeated bending experiment were conducted to evaluate the strength and flexibility of the flexible bonding joint.