• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.2
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• pp.118-124
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• 2016

In this study, experiments are conducted to improve spray coating uniformity by using second and third electrodes based on the electrospray atomization mechanism. The uniformity of fabricated thin films can be improved by adjusting the design of the second electrode. The implementation of the second electrode with an elongated hole and a bending angle of $90^{\circ}$ results in highly uniform films. In addition, induced area to substrate is increased by lowering the applied voltage using the third electrode with a round rod shape. A linear correlation between applied voltage and induced area is confirmed. Thin film thickness and surface roughness are measured after the fabrication of thin films through the electrospray process. It is confirmed that a thin film is formed having an average thickness of 273.44 nm, a thickness uniformity of less than 10%, and a surface roughness of 3 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.278-279
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• 2005

The crystallization of FePt/MgO(100) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 500-${\AA}$-thick, ordered (fct) FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 812-${\AA}$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

• Journal of Magnetics
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• v.7 no.3
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• pp.115-125
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• 2002

We proposed a novel method to evaluate the magnetic properties of the initial layer and the columnar structure separately for CoCr-based perpendicular recording media. We show that the thickness of the initial layer and the intrinsic magnetocrystalline anisotropy of columnar structure can be quantitatively evaluated using the plotted product of perpendicular anisotropy to magnetic film thickness versus magnetic film thickness ($K_{u{\bot}}^{ex{p.}}$ $\times$ d$_{mag.}$ vs. d$_{mag.}$ plot). Based on the analyses, it is found that: (1) compared with CoCrPtTa media, CoCrPtB media have relatively thin initial layer, and have fine grains with homogeneous columnar structure with c-plane crystallographic orientation; (2) CoCrPtB media can be grown epitaxially on Ru or CoCr/C intermediate layer, and as the result, the magnetic properties of the media within thin thickness region of d$_{mag.}$ $\leq$ 20 nm is significantly improved; (3) the key issue of material investigation for CoCr-based perpendicular recording media will be focused on how to fabricate c-plane-oriented columnar grains well isolated with nonmagnetic substance in epitaxial-growth media, while maintaining the thermal stability of the media.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.267-270
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• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.172-175
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• 2003

ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.125-130
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• 2007

DLC coating on ceramics is very useful for manufacturing the materials with hardness and low friction. Adhesion of DLC thin film on ceramics, on the other hand, is usually very weak. Adhesion of DLC film depends on many parameters such as contamination and chemical bonding between thin film and substrate. In this study, adhesion of DLC film on ceramics was improved by the intermediate layer when the plasma immersion ion deposition (PIID) technique was applied. It is found that the chemical composition and the thickness of intermediate layer have significantly an effect on the adhesion of DLC thin film on $Al_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.455-458
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• 2001

The thin films of high pemitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)$TiO_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/$SiO_2/Si$ substrate at 4,000 [rpm] for 10 seconds. The devices of BST thin films to composite $(Ba_{0.7},Sr_{0.3})TiO_3$ were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_2/Si$ substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$, $3800[\AA]$. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency l[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.455-458
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.441-447
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• 1995

Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/SiO2/Si(100) substrate by rf magnetron sputtering. The substrate temperature changed from 35$0^{\circ}C$ to 55$0^{\circ}C$ and crystalline BST thin films were deposited above 45$0^{\circ}C$. Most of the films had (111) preferred orientation regardless of deposition temperature, but the films changed to (100) preferred orientation as gas pressure increased. The dielectric constant increased with increasing substrate temperature and film thickness, and ranged from 100 to 600 at room temperature. The leakage current increased as substrate temperature increased or as film thickness decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.272-275
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• 2019

We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.