• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.575-578
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• 2000

In this work, all solid-state thin film supercapacitor(TFSC) was fabricated using tungsten trioxide (WO$_3$) with a structure WO$_3$/LiPON/WO$_3$/Pt/TiO$_2$/Si (substrate). After TiO$_2$ was deposited on Si(100) wafer by d.c. reactive sputtering, the Pt current collector films were grown on TiO$_2$glue layer without breaking vacuum by d.c. sputtering. Fabrication conditions of WO$_3$ thin film were such that substrate temperature, working pressure, gas ratio of $O_2$/Ar and r.f. power were room temperature, 5 mTorr, 20% (O$_2$(8sccm)/Ar(32sccm)) and 200W, respectively. LiPON electrolyte film were grown on the WO$_3$ film using r.f. magnetron sputtering at room temperature. The XRD pattern of the as-deposited WO$_3$ thin film were shown no crystalline peak (amorphous). The SEM image of as-deposited WO$_3$ thin film showed that the surface is smooth and uniform. The capacitiy of as-fabricated TFSC was 0$\times$10$^{-2}$ F/$\textrm{cm}^2$-${\mu}{\textrm}{m}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.920-923
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• 2000

All solid-state thin film supercapacitor(TFSC) based on $RuO_2$ electrode was fabricated. Ruthenium oxide$(RuO_2)$ thin film was deposited on Pt/Ti/Si subsrate by d.c. magnetron sputtering. LiPON(lithium phosphorus oxynitride) thin film were deposited by r.f. reactive sputtering. X-ray diffraction patterns of $RuO_2$ and LiPON films revealed that crystal structures of both films were amorphous. To decrease resistivity of $RuO_2$ thin film, $RuO_2$ thin film was deposited with $H_2O$ vapor. In order to decide the maximum ionic conductivity, the LiPON films were prepared by various sputtering condition. The maximum ionic conductivity was $9.5\times{10}^7S/cm$. A charge-discharge measurements showed the capacity of $3\times{10-2}\;F/cm^2-\mu{m}$ for the as-fabricated TFSC. The discharging efficiency was decreased after 500 cycles by 40 %.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.339-344
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• 2001

An all solid-state thin film supercapacitor (TFSC) with Co$_3$O$_4$/LiPON/Co$_3$O$_4$ structure was fabricated on Pt/Ti/Si substrate using Co$_3$O$_4$ thin film electrode. Each Co$_3$O$_4$ film was grown by reactive dc reactive magnetron sputtering with increasing $O_2$/[Ar+O$_2$] ratio. Amorphous LiPON electrolyte film was deposited on Co$_3$O$_4$/Pt/Ti/Si in pure nitrogen ambient by using reactive rf magnetron sputtering. The electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ multi-layer structures exhibits a behavior of a bulk-type supercapacitor, even though much lower capacity (from 5 to 25 mF/$\textrm{cm}^2$-$\mu\textrm{m}$) than that of the bulk one. It was found that the TFSC showed a fairly constant discharge capacity with a constant current of 50 $\mu\textrm{A}/\textrm{cm}^2$ at the cut-off voltage 0-2V during 400 cycles. It is shown that the electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ TFSC is dependent upon the sputtering gas ratio. The capacity dependency of electrode films on different gas ratios was explained by different structural, electrical, and surfacical properties.