• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.283-283
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• 2007

Titanium nitride thin films were deposited on $SiO_2$/Si substrate by rf-reactive magnetron sputtering. The structural and electrical properties of the films were investigated with various $N_2/(Ar+N_2)$ flow ratios (nitrogen/argon flow ratio). The resistivity as well as temperature coefficient of resistance (TCR) of the films strongly depends on phase structure. For the films deposited at nitrogen/argon flow ratio of below 5%, the resistivity increased with increasing nitrogen/argon flow ratios. However, the resistivity of the film deposited at nitrogen/argon flow ratio of 7% decreased drastically; it is even smaller than that of metal titanium nitride. A near-zero TCR value of approximately 9 ppm/K was observed for films deposited at nitrogen/argon flow ratio of 3%.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.453-456
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• 2010

Tantalum oxide ($Ta_2O_5$) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is $1500{\AA}$, the breakdown voltage is 350volts and dielectric constant is 29.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.2
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• pp.56-60
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• 2003

In this work, we have fabricated thin film resistors using the DC/RF magnetron sputter of 51wt%Ni-41wt%Cr-8wt%Si alloy target and studied the effect of the process parameters on the electrical properties. In fabrication process, sputtering power, substrate temperature and annealing temperature have been varied as controllable parameters. TCR decreases with increasing the substrate temperature, but TCR increases over 300 [$^{\circ}C$]. The films are annealed to 400 [$^{\circ}C$] in air atmosphere, TCR increases with increasing the annealing temperature. The resistivity was 172 [${\mu}{\Omega}{\cdot}cm$] and 209 [${\mu}{\Omega}{\cdot}cm$] for the RF and DC as a sputtering power sources, respectively. Also, TCR was -52 [$ppm/^{\circ}C$] and -25 [$ppm/^{\circ}C$]. As a results of them, it is suggested that the sheet resistance and TCR of thin films can be controlled by variation of sputter process parameter and annealing of thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.126-126
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• 2012

In past decades, the themal inkjet (TIJ) printer has been widely used as one of the most well-known digital printing technology due to its low cost, and high printing quality. Since the printing speed of TIJ printers are much slower than that of laser printers, however, there has been intensive efforts to raise the printing speed of TIJ printers. One of the most plausible methods to raise the printing speed of TIJ printers is to adopt a page-wide array TIJ printhead. To accomplish this goal, the high efficiency inkjet heating resistor films should be developed to settle the high power consumption problem of a page-wide array TIJ printhead. In this study, we investigated noble metal based multicomponent thin film resistor films prepared by atomic layer deposition (ALD) for a high efficiency inkjet printhead. Design concept, preparation, material properties of noble metal based multicomponent thin films will be discussed in terms of mutlfunctionality.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.712-716
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• 2006

NiCr thin films prepared on $SiO_2/Si$ substrates at room temperature by magnetron co-sputtering technique and then annealed in a vacuum ambient $(3{\times}10^{-6}\;Torr)\;at\;400^{\circ}C$. The grain size and crystallinity of the films increased with film thickness. The resistivity of the films slightly decreases as the film thickness increases, Temperature coefficient resistance (TCR) exhibits positive values irrespective of film thickness and TCR in the range of 50 to 400 nm thickness shows suitable values for the application of 10 dB in ${\pi}-type$ attenuators.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.1-7
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• 2005

The effect of trimming process to adjust accurate resistance of a thin-film resistor was studied with respect to low temperature coefficient of resistance(TCR) and high precision. The characteristics of a thin-film resistor fabricated by sputtering were investigated depending on trimming condition and annealing temperature. Measured results showed that the characteristic of a thin-film resistor was degraded with increased trimming speed. However, an average resistance deviation and a TCR were improved to $0.26\%$ and 52.77[ppm/K], respectively, through annealing treatment. Also, thin-film resistors with 1 k$\Omega$ and 10k$\Omega$ showed better performance compared to a resistor with 100k$\Omega$. The Optimal trimming speed and annealing temperature were 20mm/sec and 539K, respectively, and under this optimal condition, a thin-film resistor with an average resistance deviation of $0.31\%$ and a TCR of below 10[ppm/K] was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.411-415
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• 2002

Precision resistors were prepared by controlling the concentration of Ni and Cr deposited on cylindrical alumina substrates (diameter: 1.7mm, length: 5.5mm). Deposited films were analyzed with FESEM, AES, and AFM. As the amount of Cr in the film increases, the TCR was shifted to negative direction.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1640-1642
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• 2000

We were fabricated of NiCr thin film resitors(TFR) on $Al_{2}O_3$ substrates by dc magnetic sputtering, system. The characteristics of electrical resistance by substrates & annealing condition on the resistors were studied by X-ray Diff. and SEM, ESCA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.554-559
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• 2005

Ni/Cr thin film is very interesting material as thin film resistors, filaments, and humidity sensors because their relatively large resistivity, more resistant to oxidation and a low temperature coefficient of resistance (TCR). These interesting properties of Ni/Cr thin films are dependent upon the preparation conditions including the deposition environment and subsequent annealing treatments. Ni/Cr thin films of 250 nm were deposited by DC magnetron sputtering on $Al_2O_3/Si$ substrate with 2-inch Ni/Cr (80/20) alloy target at room temperature for 45 minutes. Annealing treatments were performed at $400^{\circ}C,\;500^{\circ}C,\;and\;600^{\circ}C$ for 6 hours in air or $H_2$ ambient, respectively. The clear crystal boundaries without crystal growth and the densification were accomplished when the pores were disappeared in air ambient. Most of surface was oxidic including NiO, $Ni_2O_3$ and $Cr_xO_y$(x=1,2, y=2,3) after annealing in air ambient. The crystal growth in $H_2$ ambient was formed and stabilized by combination with each other due to the suppression of oxidized substance on film surface. Most oxidic Ni was restored when the oxidic Cr was present due to its stability in high-temperature $H_2$ ambient.