• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.600-605
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• 2007

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from $100^{\circ}C\;to\;300^{\circ}C$ at intervals of $50^{\circ}C$. The diffract fringe of X-ray, which depended upon the substrate temperature and the Annealing temperature of the manufactured $CuInSe_2$ thin film, was investigated. scanning electron microgaphs of represents a case that a sample manufactured at the substrate temperature of $100^{\circ}C$ was thermally treated at $200{\times}350^{\circ}C$. As a result, at $500^{\circ}C$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known that under this condition, the most excellent thin film was formed, compared with the other conditions.

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.160-164
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• 2003

Materials processing by ultrashort pulsed laser is actively being applied to micromachining technology due to its advantages with regard to non-thermal machining. In this study, materials processing with ultrashort pulses was studied by using the high repetition rate of a 800 nm Ti:sapphire regenerative amplifier. This revealed that the highly precise micromachining of metallic thin film and bulk glass with a minimal heat affected zone (HAZ) could be obtained by using near damage threshold energy. Grooves with diffraction limited sub-micrometer width were obtained with widths of 620 nm on Cr thin film and 800 nm on a soda-lime glass substrate. The machined patterns were investigated through SEM images. We also phenomenologically examined the influence of variations of parameters and proposed the optimal process conditions for microfabrication.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.68-71
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• 2020

In this study, SiNx and Al₂O₃ thin film was manufactured using PECVD deposition process and applied to crystalline silicon solar cells, resulting in 16.7% conversion efficiency. The structural improvement experiment of the rear electrode resulted in a 1.7% improvement in conversion efficiency compared to the reference cell by reducing the recombination rate of minority carriers and increasing the carrier lifetime by forming a passivation layer consisting of SiNx and Al₂O₃ thin films through the PECVD process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.2.1-2.1
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• 2011

Electrospray deposition (ESD) technique is fast finding its applicability in the field of thin film device manufacturing processes and the ease and cost efficiency attached to ESD process with possible integration with batch manufacturing technologies is the potential future of thin film device manufacturing. As the name suggests, the deposition phenomenon should solely be a spray achieved through electrostatic forces. In fact it is an imbalance between the surface forces arising because of the surface tension of the liquid to be sprayed and Maxwell stresses which are induced because of the electric field, that pull the liquid downwards from the capillary into a stable jet which further disintegrates into smaller droplets because of coulomb forces and hence a cloud of charged, mono-dispersed and extremely diminutive (sometimes up to femtolitres) droplets is achieved. The present talk is going to be exclusively about the electrospray process concepts, generation and possible applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.527-531
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• 2016

In this study, p-type thin film transistors consisting of CuO channels were fabricated by sol-gel process, with copper (II) acetate monohydrate precursors. At $500^{\circ}C$, the deposited films were fully converted into monoclinic phase CuO. The fabricated CuO thin film transistors deliver field effect mobility in saturation regime of $0.015cm^2/Vs$, and $I_{on}/I_{off}$ of ${\sim}10^3$. The degradation of the performance of the fabricated CuO thin film transistor caused by the exposure to air has been studied.

• 한국결정성장학회지
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• 제10권6호
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• pp.378-380
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• 2000

The epitaxial $BaTiO_{3}$ thin film was prepared on the MgO substrate by the coating-pyrolysis process using a mixed solution of Ba-naphthenate and Ti-naphthenate. The crystal structure of the epitaxial $BaTiO_{3}$ thin film was characterized by XRD ${\theta}/2{\theta}$ scan and asymmetric {303} rocking curve scan. The epitaxial $BaTiO_{3}$ thin film had the cubic phase with the lattice parameter of a = c = 0.4018 nm.