• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.160-163
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• 2005

Top emission OLED 소자의 안정성 위하여 Parylene을 보호층으로 적용하였다. 고분자화 방법을 이용하여 증착된 Parylene은 진공공정상온에서 증착가능하기 때문에 열에 의한 OLED 소자의 열화를 방지하며 높은 광투과율과 우수한 투습습성에 의하여 고효율 장수명을 OLED 소자에 적합하다. Parylene 5 ${\mu}m$ 의 광투과율은 90 %이상 측정 되었으며 투습율은 0.4849 $g/m^2day$로 측정되었다. Parylene의 보호층로서의 영향을 살펴보기 위하여, 보호층이 형성된 소자와 보호층이 형성되지 않은 소자를 제작하여 대기중에서 그 특성을 측정 비교하였다. 두 제작된 top emission OLED 소자는 최대 휘도가 1000 $cd/m^2$ 이상 측정되었으며, parylene 보호층 공정에 의한 소자의 구동 특성 변화는 나타나지 않았다. 대기중에서 초기휘도 200 $cd/m^2$로 측정된 parylene 보호층이 형성된 소자는 수명이 5 이었고, 보호층이 형성되지 않는 소자의 수명에 비하여 2배 이상 증가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.76.1-76.1
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• 2013

Atomic Layer Deposition (ALD) has remarkably developed in semiconductor and nano-structure applications since early 1990. Now, the advantages of ALD process are well-known as controlling atomic-level-thickness, manipulating atomic-level-composition control, and depositing impurity-free films uniformly. These unique properties may accelerate ALD related industries and applications in various functional thin film markets. On the other hand, one of big markets, Display industry, just starts to look at the potential to adopt ALD functional films in emerging display applications, such as transparent and flexible displays. Unlike conventional ALD process strategies (good quality films and stable precursors at high deposition processes), recently major display industries have suggested the following requirements: large area equipment, reasonable throughput, low temperature process, and cost-effective functional precursors. In this talk, it will be mentioned some demands of display industries for applying ALD processes and/or functional films, in terms of emerging display technologies. In fact, the AMOLED (active matrix organic light emitting diode) Television markets are just starting at early 2013. There are a few possibilities and needs to be developing for AMOLED, Flexible and transparent Display markets. Moreover, some basic results will be shown to specify ALD display applications, including transparent conduction oxide, oxide semiconductor, passivation and barrier films.

• Korean Chemical Engineering Research
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• v.57 no.4
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• pp.519-524
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• 2019

Even though stainless steel foil is not a highly efficient material for film-type solar cell, it has strong passivation capability without additional process. In this study, silicone resin was employed during a-Si:H thin film solar cell fabrication for the purpose of planarization and electrical insulation. In the first stage of process, silicone resin was coat onto the stainless steel (STS) using spin coater with thickness of $2{\sim}3{\mu}m$ and followed by aluminum deposition using ion beam application. Unexpectedly buckling was formed during aluminum deposition process. After subsequent fabrication processes, solar cell performance was evaluated. In voltage-current data, slight increase of cell performance was obtained and interpreted by the increase of light scattering.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.622-622
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• 2013

Piezoelectric energy harvesting (PEH) device refers to a power device for acquiring mechanical energy from the environment surrounding us which would otherwise be wasted and for converting it into usable electrical energy. While much work has been done on developing ZnO nanogenerator (NG) with nanowire arrays, there are some issues of not only scaling up its output power but also optimizing structure for operating feasibly in various conditions. Efficiency of NG is highly dependent on fixed orientation. But in many cases, it is not easy to predict where the pressure and vibration may come from. Furthermore, the direction of the applied mechanical stress is usually non-stationary and can be random in various practical applications. Therefore an omnidirectional PEH is needed.In this work, we investigate an omnidirectional PEH device consisting ZnO nanowires. We deposited spiral patterned ZnO seed layer on Kapton film. We deposited thin Cr layer on the ZnO seed layer using DC-sputter to form a passivation layer to retard un-expected growth of ZnO nanowires. We grew ZnO nanowires along the spiral arms using hydrothermal method. ZnO nanowires have been selectively grown from the ZnO sidewall without Cr layer and have the average length of$5{\mu}m$ and the average diameter of 40nm. We reduced the defect in the as-grown ZnO nanowires by O2 plasma using asher and by thermal treatment using RTA. Consequently, each nanowire has different directions to each other. This isotropic design can lead to the omnidirectional power generation. The morphology of NG is characterized with FESEM. Maximum output power of the device is measured by using a picoammeter and a nanovoltmeter.

• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.217-223
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• 1995

절연보호막에 따른 AI-1%Si 박막배선의 평균수명(MTF, Mean-Time-to-Failure) 및 electromigration에 대한 저항성, 즉 활성화에너지(Q)변화 등을 측정 비교하였다. 박막배선은 $5000\AA$두께로 열산화막 처리된 p-Si(100)기판위에 $7000\AA$의 AI-1%Si을 증착한 후 photolithography 공정으로 형성시켰다. Electromigration test를 위한 박막배선은 $3\mu$m의 폭과 $400\mu$m, $1600\mu$m의 두 가지 길이를 가지며 절연보호막 효과를 알아보기 위해 그 위에 $3000\AA$의 두께로 SiO2, PSG, Si3N4등 절연보호막을 APCVD 및 PECVD를 이용하여 각각 증착시켰다. 가속화 실험을 위해 인가된 전류밀도는 4.5X106A/cm2이었고 180, 210, $240^{\circ}C$온도에서 d.c. 인가 후의 저항변화를 측정하여 평균수명을 구한 후 Black 방정식을 이용하여 활성화에너지를 측정하였다. AI-1%Si 박막배선에서 electromigration에 대한 활성화에너지값은 $400\mu$m길이의 경우 0.44eV(nonpassivated), 0.45eV(Si3N4 passivated), 0.50 eV(PSG passivated), 그리고 0.66 eV(SiO2 passivated)로 각각 측정되었다. $1600\mu$m 길이의 AI-1%Si 박막배선 실험에서도 같은 절연보호막 효과가 관찰되었다. 따라서 SiO2, PSG, Si3N4등 절연보호막은 AI-1%Si 박막배선에서의 electromigration에 대한 저항력을 높여 결함방지효과를 보이며 수명을 향상시킨다. SiO2의 절연보호막의 경우가 AI-1%Si 박막배선의 electromigration에 대한 가장 강한 저항력을 보이며 평균수명도 높게 나타났다.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.77-80
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• 2003

Adsorption of glycine on$Si_3N_4$powder surface has been investigated, which is supposed to enhance the formation of passive layer inhibiting oxidation in aqueous solution. In the basic solution, multinuclear surface complexing between Si and dissociated ligands was responsible for the saturated adsorption of glycine. In addition, $CeO_2$-based CMP slurry containing glycine was manufactured and then applied to planarize$SiO_2$and$Si_3N_4$thin film. Owing to the passivation by glycine, the removal rates, Rh, were decreased, however, the selectivities, RE(SiO$_2$)/RR($Si_3N_4$), increased and showed maximum at pH=12. The suppressed oxidation and dissolution by adsorbate were correlated with the dissociation behavior of glycine at different pH and subsequent chemical adsorption.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.166-174
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• 1993

Abstract The crack resistance of PSG(Phosphosilicate Glass) and PE-SiN(Plasma Enhanced CVD S${i_2}{N_4}$)films deposited on aluminium thin films on Si substrate was analyzed in this study. PSG was deposited by AP-CVD and PE- SiN by PE-CVD. All the films underwent repeated heat cycles at 45$0^{\circ}C$for 30 min. Crack formation and development were examined between each heat cycle. The crack behavior was found to be closely related to the stresses in the films. The stress induced by the difference in thermal expansion behavior between the passivation layers and underlying aluminum film may cause the crack. Crack resistance decreases as the thickness of PSG films increases due to the high tensile stress of the films. Phosphorus in the PSG films releases tensile stress and consequently the stress of the films tends to show compressive stress. As a result, crack resistance increased as the concentratin of P in the PSG films increased. Crack resistance in the PE-SiN films also increased with compressive stress. An experimental model to predict crack generation in the PSG and PE-SiN films during heat cycle was suggested.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.41-45
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• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

• Journal of Electrochemical Science and Technology
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• v.13 no.2
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• pp.213-226
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• 2022

In the present study, the corrosion behavior of aluminum Al-7075 tempered (T-6 condition) alloy was evaluated by immersion testing and electrochemical testing in 1.75% and 3.5% NaCl environment at acidic, neutral and basic pH. The data obtained by both immersion tests and electrochemical corrosion tests (potentiodynamic polarization and electrochemical impedance spectroscopy tests) present that the corrosion rate of the alloy specimens is minimum for the pH=7 condition of the solution due to the formation of dense and well adherent thin protective oxide layer. Whereas the solutions with acidic and alkaline pH cause shift in the corrosion behavior of aluminum alloy to more active domains aggravated by the constant flux of acidic and alkaline ions (Cl^- and OH^-) in the media which anodically dissolve the Al matrix in comparison to precipitated intermetallic phases (cathodic in nature) formed due to T6 treatment. Consequently, the pitting behavior of the alloy, as observed by cyclic polarization tests, shifts to more active regions when pH of the solutions changes from neutral to alkaline environment due to localized dissolution of the matrix in alkaline environment that ingress by diffusion through the pores in the oxide film. Microscopic analysis also strengthens the results obtained by immersion corrosion testing and electrochemical corrosion testing as the study examines the corrosion behavior of this alloy under a systematic evaluation in marine environment.